110 GHz, 110 mW hybrid silicon-lithium niobate Mach-Zehnder modulator
Abstract High bandwidth, low voltage electro-optic modulators with high optical power handling capability are important for improving the performance of analog optical communications and RF photonic links. Here we designed and fabricated a thin-film lithium niobate (LN) Mach-Zehnder modulator (MZM)...
| Main Authors: | , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2022-11-01
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| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-022-23403-6 |
| _version_ | 1811223598146256896 |
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| author | Forrest Valdez Viphretuo Mere Xiaoxi Wang Nicholas Boynton Thomas A. Friedmann Shawn Arterburn Christina Dallo Andrew T. Pomerene Andrew L. Starbuck Douglas C. Trotter Anthony L. Lentine Shayan Mookherjea |
| author_facet | Forrest Valdez Viphretuo Mere Xiaoxi Wang Nicholas Boynton Thomas A. Friedmann Shawn Arterburn Christina Dallo Andrew T. Pomerene Andrew L. Starbuck Douglas C. Trotter Anthony L. Lentine Shayan Mookherjea |
| author_sort | Forrest Valdez |
| collection | DOAJ |
| description | Abstract High bandwidth, low voltage electro-optic modulators with high optical power handling capability are important for improving the performance of analog optical communications and RF photonic links. Here we designed and fabricated a thin-film lithium niobate (LN) Mach-Zehnder modulator (MZM) which can handle high optical power of 110 mW, while having 3-dB bandwidth greater than 110 GHz at 1550 nm. The design does not require etching of thin-film LN, and uses hybrid optical modes formed by bonding LN to planarized silicon photonic waveguide circuits. A high optical power handling capability in the MZM was achieved by carefully tapering the underlying Si waveguide to reduce the impact of optically-generated carriers, while retaining a high modulation efficiency. The MZM has a $$V_\pi L$$ V π L product of 3.1 V.cm and an on-chip optical insertion loss of 1.8 dB. |
| first_indexed | 2024-04-12T08:35:28Z |
| format | Article |
| id | doaj.art-c633a62f0f6f40cb87026714e55a3d08 |
| institution | Directory Open Access Journal |
| issn | 2045-2322 |
| language | English |
| last_indexed | 2024-04-12T08:35:28Z |
| publishDate | 2022-11-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Scientific Reports |
| spelling | doaj.art-c633a62f0f6f40cb87026714e55a3d082022-12-22T03:40:02ZengNature PortfolioScientific Reports2045-23222022-11-0112111110.1038/s41598-022-23403-6110 GHz, 110 mW hybrid silicon-lithium niobate Mach-Zehnder modulatorForrest Valdez0Viphretuo Mere1Xiaoxi Wang2Nicholas Boynton3Thomas A. Friedmann4Shawn Arterburn5Christina Dallo6Andrew T. Pomerene7Andrew L. Starbuck8Douglas C. Trotter9Anthony L. Lentine10Shayan Mookherjea11Department of Electrical and Computer Engineering, University of California, San DiegoDepartment of Electrical and Computer Engineering, University of California, San DiegoDepartment of Electrical and Computer Engineering, University of California, San DiegoSandia National Laboratories, Applied Microphotonic SystemsSandia National Laboratories, Applied Microphotonic SystemsSandia National Laboratories, Applied Microphotonic SystemsSandia National Laboratories, Applied Microphotonic SystemsSandia National Laboratories, Applied Microphotonic SystemsSandia National Laboratories, Applied Microphotonic SystemsSandia National Laboratories, Applied Microphotonic SystemsSandia National Laboratories, Applied Microphotonic SystemsDepartment of Electrical and Computer Engineering, University of California, San DiegoAbstract High bandwidth, low voltage electro-optic modulators with high optical power handling capability are important for improving the performance of analog optical communications and RF photonic links. Here we designed and fabricated a thin-film lithium niobate (LN) Mach-Zehnder modulator (MZM) which can handle high optical power of 110 mW, while having 3-dB bandwidth greater than 110 GHz at 1550 nm. The design does not require etching of thin-film LN, and uses hybrid optical modes formed by bonding LN to planarized silicon photonic waveguide circuits. A high optical power handling capability in the MZM was achieved by carefully tapering the underlying Si waveguide to reduce the impact of optically-generated carriers, while retaining a high modulation efficiency. The MZM has a $$V_\pi L$$ V π L product of 3.1 V.cm and an on-chip optical insertion loss of 1.8 dB.https://doi.org/10.1038/s41598-022-23403-6 |
| spellingShingle | Forrest Valdez Viphretuo Mere Xiaoxi Wang Nicholas Boynton Thomas A. Friedmann Shawn Arterburn Christina Dallo Andrew T. Pomerene Andrew L. Starbuck Douglas C. Trotter Anthony L. Lentine Shayan Mookherjea 110 GHz, 110 mW hybrid silicon-lithium niobate Mach-Zehnder modulator Scientific Reports |
| title | 110 GHz, 110 mW hybrid silicon-lithium niobate Mach-Zehnder modulator |
| title_full | 110 GHz, 110 mW hybrid silicon-lithium niobate Mach-Zehnder modulator |
| title_fullStr | 110 GHz, 110 mW hybrid silicon-lithium niobate Mach-Zehnder modulator |
| title_full_unstemmed | 110 GHz, 110 mW hybrid silicon-lithium niobate Mach-Zehnder modulator |
| title_short | 110 GHz, 110 mW hybrid silicon-lithium niobate Mach-Zehnder modulator |
| title_sort | 110 ghz 110 mw hybrid silicon lithium niobate mach zehnder modulator |
| url | https://doi.org/10.1038/s41598-022-23403-6 |
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