A Surface-Potential-Based Analytical <i>I</i>-<i>V</i> Model of Full-Depletion Single-Gate SOI MOSFETs
A surface-potential-based analytical <i>I</i>-<i>V</i> model of single-gate (SG) silicon-on-insulator (SOI) MOSFETs in full-depletion (FD) mode is proposed and compared with numerical data and Khandelwal’s experimental results. An explicit calculation scheme of surf...
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| Format: | Article |
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MDPI AG
2019-07-01
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| Series: | Electronics |
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| Online Access: | https://www.mdpi.com/2079-9292/8/7/785 |
| _version_ | 1811186506238263296 |
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| author | Chuanzhong Xu Fei Yu Gongyi Huang Wanling Deng Xiaoyu Ma Junkai Huang |
| author_facet | Chuanzhong Xu Fei Yu Gongyi Huang Wanling Deng Xiaoyu Ma Junkai Huang |
| author_sort | Chuanzhong Xu |
| collection | DOAJ |
| description | A surface-potential-based analytical <i>I</i>-<i>V</i> model of single-gate (SG) silicon-on-insulator (SOI) MOSFETs in full-depletion (FD) mode is proposed and compared with numerical data and Khandelwal’s experimental results. An explicit calculation scheme of surface potential, processing high computation accuracy and efficiency, is demonstrated according to the derivation of the coupling relation between surface potential and back-channel potential. The maximum absolute error decreases into 10<sup>−7</sup> V scale, and computation efficiency is improved substantially compared with numerical iteration. Depending on the surface potential, the drain current is derived in closed-form and validated by Khandelwal’s experimental data. High computation accuracy and efficiency suggest that this analytical <i>I</i>-<i>V</i> model displays great promise for SOI device optimizations and circuit simulations. |
| first_indexed | 2024-04-11T13:46:36Z |
| format | Article |
| id | doaj.art-c636f49df8be43cdb8998e4af6453d9c |
| institution | Directory Open Access Journal |
| issn | 2079-9292 |
| language | English |
| last_indexed | 2024-04-11T13:46:36Z |
| publishDate | 2019-07-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Electronics |
| spelling | doaj.art-c636f49df8be43cdb8998e4af6453d9c2022-12-22T04:21:02ZengMDPI AGElectronics2079-92922019-07-018778510.3390/electronics8070785electronics8070785A Surface-Potential-Based Analytical <i>I</i>-<i>V</i> Model of Full-Depletion Single-Gate SOI MOSFETsChuanzhong Xu0Fei Yu1Gongyi Huang2Wanling Deng3Xiaoyu Ma4Junkai Huang5Department of Electrical and Electronic Teaching, College of Information Science and Engineering, Huaqiao University, Xiamen 361021, ChinaDepartment of Electrical and Electronic Teaching, College of Information Science and Engineering, Huaqiao University, Xiamen 361021, ChinaDepartment of Electrical and Electronic Teaching, College of Information Science and Engineering, Huaqiao University, Xiamen 361021, ChinaDepartment of Electronic Engineering, Jinan University, Guangzhou 510632, ChinaDepartment of Electronic Engineering, Jinan University, Guangzhou 510632, ChinaDepartment of Electronic Engineering, Jinan University, Guangzhou 510632, ChinaA surface-potential-based analytical <i>I</i>-<i>V</i> model of single-gate (SG) silicon-on-insulator (SOI) MOSFETs in full-depletion (FD) mode is proposed and compared with numerical data and Khandelwal’s experimental results. An explicit calculation scheme of surface potential, processing high computation accuracy and efficiency, is demonstrated according to the derivation of the coupling relation between surface potential and back-channel potential. The maximum absolute error decreases into 10<sup>−7</sup> V scale, and computation efficiency is improved substantially compared with numerical iteration. Depending on the surface potential, the drain current is derived in closed-form and validated by Khandelwal’s experimental data. High computation accuracy and efficiency suggest that this analytical <i>I</i>-<i>V</i> model displays great promise for SOI device optimizations and circuit simulations.https://www.mdpi.com/2079-9292/8/7/785silicon-on-insulator MOSFETssurface potentialback-channel potentialfull-depletionanalytical <i>I</i>-<i>V</i> model |
| spellingShingle | Chuanzhong Xu Fei Yu Gongyi Huang Wanling Deng Xiaoyu Ma Junkai Huang A Surface-Potential-Based Analytical <i>I</i>-<i>V</i> Model of Full-Depletion Single-Gate SOI MOSFETs Electronics silicon-on-insulator MOSFETs surface potential back-channel potential full-depletion analytical <i>I</i>-<i>V</i> model |
| title | A Surface-Potential-Based Analytical <i>I</i>-<i>V</i> Model of Full-Depletion Single-Gate SOI MOSFETs |
| title_full | A Surface-Potential-Based Analytical <i>I</i>-<i>V</i> Model of Full-Depletion Single-Gate SOI MOSFETs |
| title_fullStr | A Surface-Potential-Based Analytical <i>I</i>-<i>V</i> Model of Full-Depletion Single-Gate SOI MOSFETs |
| title_full_unstemmed | A Surface-Potential-Based Analytical <i>I</i>-<i>V</i> Model of Full-Depletion Single-Gate SOI MOSFETs |
| title_short | A Surface-Potential-Based Analytical <i>I</i>-<i>V</i> Model of Full-Depletion Single-Gate SOI MOSFETs |
| title_sort | surface potential based analytical i i i i v i model of full depletion single gate soi mosfets |
| topic | silicon-on-insulator MOSFETs surface potential back-channel potential full-depletion analytical <i>I</i>-<i>V</i> model |
| url | https://www.mdpi.com/2079-9292/8/7/785 |
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