A Surface-Potential-Based Analytical <i>I</i>-<i>V</i> Model of Full-Depletion Single-Gate SOI MOSFETs
A surface-potential-based analytical <i>I</i>-<i>V</i> model of single-gate (SG) silicon-on-insulator (SOI) MOSFETs in full-depletion (FD) mode is proposed and compared with numerical data and Khandelwal’s experimental results. An explicit calculation scheme of surf...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2019-07-01
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| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/8/7/785 |