Multiple-valued logic design based on the multiple-peak BiCMOS-NDR circuits

Multiple-valued logic design based on the multiple-peak BiCMOS-NDR circuits

Three different multiple-valued logic (MVL) designs using the multiple-peak negative-differential-resistance (NDR) circuits are investigated. The basic NDR element, which is made of several Si-based metal-oxide-semiconductor field-effect-transistor (MOS) and SiGe-based heterojunction-bipolar-transis...

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Bibliographic Details
Main Authors: Kwang-Jow Gan, Jeng-Jong Lu, Wen-Kuan Yeh, Yaw-Hwang Chen, Yan-Wun Chen
Format: Article
Language:English
Published: Elsevier 2016-06-01
Series:Engineering Science and Technology, an International Journal
Subjects:
Multiple-valued logic
Negative differential resistance circuit
BiCMOS process
Peak-control method
Online Access:http://www.sciencedirect.com/science/article/pii/S2215098615300902

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