Cupric oxide (CuO)/zinc oxide (ZnO) heterojunction diode with low turn-on voltage
The p-n junction is the fundamental form of an electronic semiconductor device. A p-CuO/n-ZnO heterojunction diode was formed by using thermal evaporation and thermal oxidation techniques. Cupric oxide (CuO) films of 300 µm in thickness were obtained by thermal oxidation of Cu foils. Zinc oxide (ZnO...
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2021-03-01
|
| Series: | Results in Physics |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2211379721000711 |
| _version_ | 1818617433463717888 |
|---|---|
| author | Roberto López Gerardo Villa-Sánchez Israel Vivaldo de la Cruz Cecilia Encarnación-Gómez Víctor Hugo Castrejón-Sánchez Antonio Coyopol Jorge Edmundo Mastache Cesar Leyva-Porras |
| author_facet | Roberto López Gerardo Villa-Sánchez Israel Vivaldo de la Cruz Cecilia Encarnación-Gómez Víctor Hugo Castrejón-Sánchez Antonio Coyopol Jorge Edmundo Mastache Cesar Leyva-Porras |
| author_sort | Roberto López |
| collection | DOAJ |
| description | The p-n junction is the fundamental form of an electronic semiconductor device. A p-CuO/n-ZnO heterojunction diode was formed by using thermal evaporation and thermal oxidation techniques. Cupric oxide (CuO) films of 300 µm in thickness were obtained by thermal oxidation of Cu foils. Zinc oxide (ZnO) films of 30 µm in thickness were prepared in two process steps: firstly, thermal evaporation of Zn at atmospheric pressure, and then thermal oxidation to Zn films. The p-CuO/n-ZnO heterojunction diode was formed by performing the steps of ZnO deposition on the surface of the CuO films, and completed by deposition of silver electrical contacts on the top and on the bottom sides of the heterostructure. Structural, morphological, and electrical properties of CuO and ZnO were studied by X-ray diffraction (XRD), Raman spectroscopy, Uv–Vis DRS, scanning electron microscopy (SEM), transmission electron microscopy (TEM), and Hall effect techniques. Current-voltage (I-V) measurements were performed to the p-CuO/n-ZnO heterojunction diode. Structural characterization to CuO confirmed that pure, crystalline and (111) textured films can be obtained by thermal oxidation of Cu. ZnO films showed a polycrystalline structure without preferred orientation. The band gap of CuO and ZnO were 1.51 and 3.21 eV, respectively. Cross-sectional SEM and TEM images confirmed the formation of the p-CuO/n-ZnO heterojunction diode. Hall measurements confirmed the p-type conductivity of CuO and the n-type conductivity of ZnO. Also, the carrier concentration and Hall mobility of CuO films were 9.54 × 1012 cm−3 and 267 cm2 V−1 s−1, respectively. ZnO films exhibited a carrier concentration and Hall mobility of 3.69 × 1012 cm−3 and 22.18 cm2 V−1 s−1, respectively. The I-V measurement showed that the p-CuO/n-ZnO heterojunction exhibits a low turn-on voltage of about 0.8 V and a breakdown voltage of about 38 V. Electrical parameter such as rectification ratio and ideality factor were also calculated. An energy band-diagram of the CuO/ZnO heterojunction was proposed, where a built-in voltage of 0.57 eV was observed. |
| first_indexed | 2024-12-16T17:05:37Z |
| format | Article |
| id | doaj.art-c66ffd061ce24c108b23fd599d45b126 |
| institution | Directory Open Access Journal |
| issn | 2211-3797 |
| language | English |
| last_indexed | 2024-12-16T17:05:37Z |
| publishDate | 2021-03-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Results in Physics |
| spelling | doaj.art-c66ffd061ce24c108b23fd599d45b1262022-12-21T22:23:36ZengElsevierResults in Physics2211-37972021-03-0122103891Cupric oxide (CuO)/zinc oxide (ZnO) heterojunction diode with low turn-on voltageRoberto López0Gerardo Villa-Sánchez1Israel Vivaldo de la Cruz2Cecilia Encarnación-Gómez3Víctor Hugo Castrejón-Sánchez4Antonio Coyopol5Jorge Edmundo Mastache6Cesar Leyva-Porras7Tecnológico de Estudios Superiores de Jocotitlán (TESJo), Carretera Toluca-Atlacomulco Km 44.8, Ejido de San Juan y San Agustín, Jocotitlán, Edo. México, Mexico; Corresponding author.Tecnológico de Estudios Superiores de Jocotitlán (TESJo), Carretera Toluca-Atlacomulco Km 44.8, Ejido de San Juan y San Agustín, Jocotitlán, Edo. México, MexicoBenemérita Universidad Autonóma de Puebla, 14 sur y Av. San Claudio, 72570 Puebla, MexicoUniversidad Juárez Autónoma de Tabasco, División Académica Multidisciplinaria de Jalpa de Méndez, Carretera estatal libre Villahermosa-Comalcalco Km 27+000 s/n Rancheria Ribera Alta, CP 86205 Jalpa de Méndez, Tabasco, MexicoTecnológico de Estudios Superiores de Jocotitlán (TESJo), Carretera Toluca-Atlacomulco Km 44.8, Ejido de San Juan y San Agustín, Jocotitlán, Edo. México, MexicoBenemérita Universidad Autonóma de Puebla, 14 sur y Av. San Claudio, 72570 Puebla, MexicoTecnológico de Estudios Superiores de Jocotitlán (TESJo), Carretera Toluca-Atlacomulco Km 44.8, Ejido de San Juan y San Agustín, Jocotitlán, Edo. México, MexicoCentro de Investigación en Materiales Avanzados (CIMAV), Miguel de Cervantes 120, Complejo Industrial Chihuahua, C.P. 31136 Chihuahua, MexicoThe p-n junction is the fundamental form of an electronic semiconductor device. A p-CuO/n-ZnO heterojunction diode was formed by using thermal evaporation and thermal oxidation techniques. Cupric oxide (CuO) films of 300 µm in thickness were obtained by thermal oxidation of Cu foils. Zinc oxide (ZnO) films of 30 µm in thickness were prepared in two process steps: firstly, thermal evaporation of Zn at atmospheric pressure, and then thermal oxidation to Zn films. The p-CuO/n-ZnO heterojunction diode was formed by performing the steps of ZnO deposition on the surface of the CuO films, and completed by deposition of silver electrical contacts on the top and on the bottom sides of the heterostructure. Structural, morphological, and electrical properties of CuO and ZnO were studied by X-ray diffraction (XRD), Raman spectroscopy, Uv–Vis DRS, scanning electron microscopy (SEM), transmission electron microscopy (TEM), and Hall effect techniques. Current-voltage (I-V) measurements were performed to the p-CuO/n-ZnO heterojunction diode. Structural characterization to CuO confirmed that pure, crystalline and (111) textured films can be obtained by thermal oxidation of Cu. ZnO films showed a polycrystalline structure without preferred orientation. The band gap of CuO and ZnO were 1.51 and 3.21 eV, respectively. Cross-sectional SEM and TEM images confirmed the formation of the p-CuO/n-ZnO heterojunction diode. Hall measurements confirmed the p-type conductivity of CuO and the n-type conductivity of ZnO. Also, the carrier concentration and Hall mobility of CuO films were 9.54 × 1012 cm−3 and 267 cm2 V−1 s−1, respectively. ZnO films exhibited a carrier concentration and Hall mobility of 3.69 × 1012 cm−3 and 22.18 cm2 V−1 s−1, respectively. The I-V measurement showed that the p-CuO/n-ZnO heterojunction exhibits a low turn-on voltage of about 0.8 V and a breakdown voltage of about 38 V. Electrical parameter such as rectification ratio and ideality factor were also calculated. An energy band-diagram of the CuO/ZnO heterojunction was proposed, where a built-in voltage of 0.57 eV was observed.http://www.sciencedirect.com/science/article/pii/S2211379721000711Cupric oxideZinc oxideHeterojunction diodeTurn-on voltageThermal evaporationThermal oxidation |
| spellingShingle | Roberto López Gerardo Villa-Sánchez Israel Vivaldo de la Cruz Cecilia Encarnación-Gómez Víctor Hugo Castrejón-Sánchez Antonio Coyopol Jorge Edmundo Mastache Cesar Leyva-Porras Cupric oxide (CuO)/zinc oxide (ZnO) heterojunction diode with low turn-on voltage Results in Physics Cupric oxide Zinc oxide Heterojunction diode Turn-on voltage Thermal evaporation Thermal oxidation |
| title | Cupric oxide (CuO)/zinc oxide (ZnO) heterojunction diode with low turn-on voltage |
| title_full | Cupric oxide (CuO)/zinc oxide (ZnO) heterojunction diode with low turn-on voltage |
| title_fullStr | Cupric oxide (CuO)/zinc oxide (ZnO) heterojunction diode with low turn-on voltage |
| title_full_unstemmed | Cupric oxide (CuO)/zinc oxide (ZnO) heterojunction diode with low turn-on voltage |
| title_short | Cupric oxide (CuO)/zinc oxide (ZnO) heterojunction diode with low turn-on voltage |
| title_sort | cupric oxide cuo zinc oxide zno heterojunction diode with low turn on voltage |
| topic | Cupric oxide Zinc oxide Heterojunction diode Turn-on voltage Thermal evaporation Thermal oxidation |
| url | http://www.sciencedirect.com/science/article/pii/S2211379721000711 |
| work_keys_str_mv | AT robertolopez cupricoxidecuozincoxideznoheterojunctiondiodewithlowturnonvoltage AT gerardovillasanchez cupricoxidecuozincoxideznoheterojunctiondiodewithlowturnonvoltage AT israelvivaldodelacruz cupricoxidecuozincoxideznoheterojunctiondiodewithlowturnonvoltage AT ceciliaencarnaciongomez cupricoxidecuozincoxideznoheterojunctiondiodewithlowturnonvoltage AT victorhugocastrejonsanchez cupricoxidecuozincoxideznoheterojunctiondiodewithlowturnonvoltage AT antoniocoyopol cupricoxidecuozincoxideznoheterojunctiondiodewithlowturnonvoltage AT jorgeedmundomastache cupricoxidecuozincoxideznoheterojunctiondiodewithlowturnonvoltage AT cesarleyvaporras cupricoxidecuozincoxideznoheterojunctiondiodewithlowturnonvoltage |