The Investigation of the Influence of a Cu<sub>2</sub>O Buffer Layer on Hole Transport Layers in MAPbI<sub>3</sub>-Based Perovskite Solar Cells

The passivation engineering of the hole transport layer in perovskite solar cells (PSCs) has significantly decreased carrier accumulation and open circuit voltage (<i>V<sub>oc</sub></i>) loss, as well as energy band mismatching, thus achieving the goal of high-power conversio...

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Main Authors: Chunxiang Lin, Guilin Liu, Xi Xi, Lan Wang, Qiqi Wang, Qiyan Sun, Mingxi Li, Bingjie Zhu, David Perez de Lara, Huachao Zai
Format: Article
Language:English
Published: MDPI AG 2022-11-01
Series:Materials
Subjects:
Online Access:https://www.mdpi.com/1996-1944/15/22/8142
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author Chunxiang Lin
Guilin Liu
Xi Xi
Lan Wang
Qiqi Wang
Qiyan Sun
Mingxi Li
Bingjie Zhu
David Perez de Lara
Huachao Zai
author_facet Chunxiang Lin
Guilin Liu
Xi Xi
Lan Wang
Qiqi Wang
Qiyan Sun
Mingxi Li
Bingjie Zhu
David Perez de Lara
Huachao Zai
author_sort Chunxiang Lin
collection DOAJ
description The passivation engineering of the hole transport layer in perovskite solar cells (PSCs) has significantly decreased carrier accumulation and open circuit voltage (<i>V<sub>oc</sub></i>) loss, as well as energy band mismatching, thus achieving the goal of high-power conversion efficiency. However, most devices incorporating organic/inorganic buffer layers suffer from poor stability and low efficiency. In this article, we have proposed an inorganic buffer layer of Cu<sub>2</sub>O, which has achieved high efficiency on lower work function metals and various frequently used hole transport layers (HTLs). Once the Cu<sub>2</sub>O buffer layer was applied to modify the Cu/PTAA interface, the device exhibited a high <i>V<sub>oc</sub></i> of 1.20 V, a high <i>FF</i> of 75.92%, and an enhanced <i>PCE</i> of 22.49% versus a <i>V<sub>oc</sub></i> of 1.12 V, <i>FF</i> of 69.16%, and PCE of 18.99% from the (PTAA/Cu) n-i-p structure. Our simulation showed that the application of a Cu<sub>2</sub>O buffer layer improved the interfacial contact and energy alignment, promoting the carrier transportation and reducing the charge accumulation. Furthermore, we optimized the combinations of the thicknesses of the Cu<sub>2</sub>O, the absorber layer, and PTAA to obtain the best performance for Cu-based perovskite solar cells. Eventually, we explored the effect of the defect density between the HTL/absorber interface and the absorber/ETL interface on the device and recommended the appropriate reference defect density for experimental research. This work provides guidance for improving the experimental efficiency and reducing the cost of perovskite solar cells.
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spelling doaj.art-c6a3384ff4dc4e448ab0489efb448ac82023-11-24T09:04:51ZengMDPI AGMaterials1996-19442022-11-011522814210.3390/ma15228142The Investigation of the Influence of a Cu<sub>2</sub>O Buffer Layer on Hole Transport Layers in MAPbI<sub>3</sub>-Based Perovskite Solar CellsChunxiang Lin0Guilin Liu1Xi Xi2Lan Wang3Qiqi Wang4Qiyan Sun5Mingxi Li6Bingjie Zhu7David Perez de Lara8Huachao Zai9School of Science, Jiangnan University, Wuxi 214122, ChinaSchool of Science, Jiangnan University, Wuxi 214122, ChinaSchool of Science, Jiangnan University, Wuxi 214122, ChinaSchool of Internet of Things, Jiangnan University, Wuxi 214122, ChinaSchool of Science, Jiangnan University, Wuxi 214122, ChinaSchool of Science, Jiangnan University, Wuxi 214122, ChinaSchool of Science, Jiangnan University, Wuxi 214122, ChinaWuxi Institution of Supervision & Testing on Product Quality, Wuxi 214101, ChinaZhejiang Beyondsun Green Energy Technology Co., Ltd., Huzhou 313200, ChinaSchool of Materials Science and Technology, China University of Geosciences (Beijing), Beijing 100083, ChinaThe passivation engineering of the hole transport layer in perovskite solar cells (PSCs) has significantly decreased carrier accumulation and open circuit voltage (<i>V<sub>oc</sub></i>) loss, as well as energy band mismatching, thus achieving the goal of high-power conversion efficiency. However, most devices incorporating organic/inorganic buffer layers suffer from poor stability and low efficiency. In this article, we have proposed an inorganic buffer layer of Cu<sub>2</sub>O, which has achieved high efficiency on lower work function metals and various frequently used hole transport layers (HTLs). Once the Cu<sub>2</sub>O buffer layer was applied to modify the Cu/PTAA interface, the device exhibited a high <i>V<sub>oc</sub></i> of 1.20 V, a high <i>FF</i> of 75.92%, and an enhanced <i>PCE</i> of 22.49% versus a <i>V<sub>oc</sub></i> of 1.12 V, <i>FF</i> of 69.16%, and PCE of 18.99% from the (PTAA/Cu) n-i-p structure. Our simulation showed that the application of a Cu<sub>2</sub>O buffer layer improved the interfacial contact and energy alignment, promoting the carrier transportation and reducing the charge accumulation. Furthermore, we optimized the combinations of the thicknesses of the Cu<sub>2</sub>O, the absorber layer, and PTAA to obtain the best performance for Cu-based perovskite solar cells. Eventually, we explored the effect of the defect density between the HTL/absorber interface and the absorber/ETL interface on the device and recommended the appropriate reference defect density for experimental research. This work provides guidance for improving the experimental efficiency and reducing the cost of perovskite solar cells.https://www.mdpi.com/1996-1944/15/22/8142perovskite solar cellsCu<sub>2</sub>Oenergy level alignmentcarrier accumulationSCAPS-1D
spellingShingle Chunxiang Lin
Guilin Liu
Xi Xi
Lan Wang
Qiqi Wang
Qiyan Sun
Mingxi Li
Bingjie Zhu
David Perez de Lara
Huachao Zai
The Investigation of the Influence of a Cu<sub>2</sub>O Buffer Layer on Hole Transport Layers in MAPbI<sub>3</sub>-Based Perovskite Solar Cells
Materials
perovskite solar cells
Cu<sub>2</sub>O
energy level alignment
carrier accumulation
SCAPS-1D
title The Investigation of the Influence of a Cu<sub>2</sub>O Buffer Layer on Hole Transport Layers in MAPbI<sub>3</sub>-Based Perovskite Solar Cells
title_full The Investigation of the Influence of a Cu<sub>2</sub>O Buffer Layer on Hole Transport Layers in MAPbI<sub>3</sub>-Based Perovskite Solar Cells
title_fullStr The Investigation of the Influence of a Cu<sub>2</sub>O Buffer Layer on Hole Transport Layers in MAPbI<sub>3</sub>-Based Perovskite Solar Cells
title_full_unstemmed The Investigation of the Influence of a Cu<sub>2</sub>O Buffer Layer on Hole Transport Layers in MAPbI<sub>3</sub>-Based Perovskite Solar Cells
title_short The Investigation of the Influence of a Cu<sub>2</sub>O Buffer Layer on Hole Transport Layers in MAPbI<sub>3</sub>-Based Perovskite Solar Cells
title_sort investigation of the influence of a cu sub 2 sub o buffer layer on hole transport layers in mapbi sub 3 sub based perovskite solar cells
topic perovskite solar cells
Cu<sub>2</sub>O
energy level alignment
carrier accumulation
SCAPS-1D
url https://www.mdpi.com/1996-1944/15/22/8142
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