Degradation effect of Auger recombination and built-in polarization field on GaN-based light-emitting diodes
In this work, theoretical investigation of the influence of Auger recombination coefficient and built-in polarization field on the internal quantum efficiency (IQE) in terms of lateral-vertical single quantum well (SQW) as well as multiquantum well (MQW) GaN-based blue light-emitting diodes are pres...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2018-01-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5010241 |
| _version_ | 1818327039849005056 |
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| author | Muhammad Usman Kiran Saba Dong-Pyo Han Nazeer Muhammad Shabieh Farwa Rafique Muhammad Tanzila Saba |
| author_facet | Muhammad Usman Kiran Saba Dong-Pyo Han Nazeer Muhammad Shabieh Farwa Rafique Muhammad Tanzila Saba |
| author_sort | Muhammad Usman |
| collection | DOAJ |
| description | In this work, theoretical investigation of the influence of Auger recombination coefficient and built-in polarization field on the internal quantum efficiency (IQE) in terms of lateral-vertical single quantum well (SQW) as well as multiquantum well (MQW) GaN-based blue light-emitting diodes are presented. The degradation effect of the built-in polarization field on the IQE of vertical light-emitting diodes is used to strengthening the Auger recombination coefficient in comparison to lateral light-emitting diodes. This result has been found consistent in both single-as well as multi-quantum well structures. In addition, when Auger recombination coefficient has been included in the analysis, vertical multiquantum well structure shows more degradation in the IQE in comparison to the lateral structures. The effect has been dominant in vertical MQW case. |
| first_indexed | 2024-12-13T12:09:56Z |
| format | Article |
| id | doaj.art-c6b279dc55014674bfceb1761820f019 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-13T12:09:56Z |
| publishDate | 2018-01-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-c6b279dc55014674bfceb1761820f0192022-12-21T23:46:52ZengAIP Publishing LLCAIP Advances2158-32262018-01-0181015005015005-610.1063/1.5010241005801ADVDegradation effect of Auger recombination and built-in polarization field on GaN-based light-emitting diodesMuhammad Usman0Kiran Saba1Dong-Pyo Han2Nazeer Muhammad3Shabieh Farwa4Rafique Muhammad5Tanzila Saba6Department of Engineering Sciences, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Swabi 23640, PakistanDepartment of Engineering Sciences, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Swabi 23640, PakistanFaculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, JapanDepartment of Mathematics, COMSATS Institute of Information Technology, 47040 Wah Cantt, PakistanDepartment of Mathematics, COMSATS Institute of Information Technology, 47040 Wah Cantt, PakistanDepartment of Mathematics, COMSATS Institute of Information Technology, 47040 Wah Cantt, PakistanCollege of Computer and Information Sciences, Prince Sultan University, Riyadh 11586, Saudi ArabiaIn this work, theoretical investigation of the influence of Auger recombination coefficient and built-in polarization field on the internal quantum efficiency (IQE) in terms of lateral-vertical single quantum well (SQW) as well as multiquantum well (MQW) GaN-based blue light-emitting diodes are presented. The degradation effect of the built-in polarization field on the IQE of vertical light-emitting diodes is used to strengthening the Auger recombination coefficient in comparison to lateral light-emitting diodes. This result has been found consistent in both single-as well as multi-quantum well structures. In addition, when Auger recombination coefficient has been included in the analysis, vertical multiquantum well structure shows more degradation in the IQE in comparison to the lateral structures. The effect has been dominant in vertical MQW case.http://dx.doi.org/10.1063/1.5010241 |
| spellingShingle | Muhammad Usman Kiran Saba Dong-Pyo Han Nazeer Muhammad Shabieh Farwa Rafique Muhammad Tanzila Saba Degradation effect of Auger recombination and built-in polarization field on GaN-based light-emitting diodes AIP Advances |
| title | Degradation effect of Auger recombination and built-in polarization field on GaN-based light-emitting diodes |
| title_full | Degradation effect of Auger recombination and built-in polarization field on GaN-based light-emitting diodes |
| title_fullStr | Degradation effect of Auger recombination and built-in polarization field on GaN-based light-emitting diodes |
| title_full_unstemmed | Degradation effect of Auger recombination and built-in polarization field on GaN-based light-emitting diodes |
| title_short | Degradation effect of Auger recombination and built-in polarization field on GaN-based light-emitting diodes |
| title_sort | degradation effect of auger recombination and built in polarization field on gan based light emitting diodes |
| url | http://dx.doi.org/10.1063/1.5010241 |
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