Degradation effect of Auger recombination and built-in polarization field on GaN-based light-emitting diodes

Degradation effect of Auger recombination and built-in polarization field on GaN-based light-emitting diodes

In this work, theoretical investigation of the influence of Auger recombination coefficient and built-in polarization field on the internal quantum efficiency (IQE) in terms of lateral-vertical single quantum well (SQW) as well as multiquantum well (MQW) GaN-based blue light-emitting diodes are pres...

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Bibliographic Details
Main Authors:	Muhammad Usman, Kiran Saba, Dong-Pyo Han, Nazeer Muhammad, Shabieh Farwa, Rafique Muhammad, Tanzila Saba
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2018-01-01
Series:	AIP Advances
Online Access:	http://dx.doi.org/10.1063/1.5010241

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