Long-Cavity M-Plane GaN-Based Vertical-Cavity Surface-Emitting Lasers with a Topside Monolithic Curved Mirror
We report long-cavity (60.5 λ) GaN-based vertical-cavity surface-emitting lasers with a topside monolithic GaN concave mirror, a buried tunnel junction current aperture, and a bottomside nanoporous GaN distributed Bragg reflector. Under pulsed operation, a VCSEL with a 9 µm aperture had a threshold...
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| Format: | Article |
| Language: | English |
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MDPI AG
2023-06-01
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| Series: | Photonics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2304-6732/10/6/646 |
| _version_ | 1797593005746552832 |
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| author | Nathan C. Palmquist Ryan Anderson Jared A. Kearns Joonho Back Emily Trageser Stephen Gee Steven P. Denbaars Shuji Nakamura |
| author_facet | Nathan C. Palmquist Ryan Anderson Jared A. Kearns Joonho Back Emily Trageser Stephen Gee Steven P. Denbaars Shuji Nakamura |
| author_sort | Nathan C. Palmquist |
| collection | DOAJ |
| description | We report long-cavity (60.5 λ) GaN-based vertical-cavity surface-emitting lasers with a topside monolithic GaN concave mirror, a buried tunnel junction current aperture, and a bottomside nanoporous GaN distributed Bragg reflector. Under pulsed operation, a VCSEL with a 9 µm aperture had a threshold current density of 6.6 kA/cm<sup>2</sup>, a differential efficiency of 0.7%, and a maximum output power of 290 µW for a lasing mode at 411 nm and a divergence angle of 8.4°. Under CW operation, the threshold current density increased to 7.3 kA/cm<sup>2</sup>, the differential efficiency decreased to 0.4%, and a peak output power of 130 µW was reached at a current density of 23 kA/cm<sup>2</sup>. |
| first_indexed | 2024-03-11T02:02:31Z |
| format | Article |
| id | doaj.art-c6f17e539e6d41178bc2217321b4358d |
| institution | Directory Open Access Journal |
| issn | 2304-6732 |
| language | English |
| last_indexed | 2024-03-11T02:02:31Z |
| publishDate | 2023-06-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Photonics |
| spelling | doaj.art-c6f17e539e6d41178bc2217321b4358d2023-11-18T12:07:45ZengMDPI AGPhotonics2304-67322023-06-0110664610.3390/photonics10060646Long-Cavity M-Plane GaN-Based Vertical-Cavity Surface-Emitting Lasers with a Topside Monolithic Curved MirrorNathan C. Palmquist0Ryan Anderson1Jared A. Kearns2Joonho Back3Emily Trageser4Stephen Gee5Steven P. Denbaars6Shuji Nakamura7Materials Department, University of California, Santa Barbara, CA 93106, USAMaterials Department, University of California, Santa Barbara, CA 93106, USAMaterials Department, University of California, Santa Barbara, CA 93106, USAElectrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, USAMaterials Department, University of California, Santa Barbara, CA 93106, USAMaterials Department, University of California, Santa Barbara, CA 93106, USAMaterials Department, University of California, Santa Barbara, CA 93106, USAMaterials Department, University of California, Santa Barbara, CA 93106, USAWe report long-cavity (60.5 λ) GaN-based vertical-cavity surface-emitting lasers with a topside monolithic GaN concave mirror, a buried tunnel junction current aperture, and a bottomside nanoporous GaN distributed Bragg reflector. Under pulsed operation, a VCSEL with a 9 µm aperture had a threshold current density of 6.6 kA/cm<sup>2</sup>, a differential efficiency of 0.7%, and a maximum output power of 290 µW for a lasing mode at 411 nm and a divergence angle of 8.4°. Under CW operation, the threshold current density increased to 7.3 kA/cm<sup>2</sup>, the differential efficiency decreased to 0.4%, and a peak output power of 130 µW was reached at a current density of 23 kA/cm<sup>2</sup>.https://www.mdpi.com/2304-6732/10/6/646GaN VCSELtunnel junctionnanoporous GaN DBR |
| spellingShingle | Nathan C. Palmquist Ryan Anderson Jared A. Kearns Joonho Back Emily Trageser Stephen Gee Steven P. Denbaars Shuji Nakamura Long-Cavity M-Plane GaN-Based Vertical-Cavity Surface-Emitting Lasers with a Topside Monolithic Curved Mirror Photonics GaN VCSEL tunnel junction nanoporous GaN DBR |
| title | Long-Cavity M-Plane GaN-Based Vertical-Cavity Surface-Emitting Lasers with a Topside Monolithic Curved Mirror |
| title_full | Long-Cavity M-Plane GaN-Based Vertical-Cavity Surface-Emitting Lasers with a Topside Monolithic Curved Mirror |
| title_fullStr | Long-Cavity M-Plane GaN-Based Vertical-Cavity Surface-Emitting Lasers with a Topside Monolithic Curved Mirror |
| title_full_unstemmed | Long-Cavity M-Plane GaN-Based Vertical-Cavity Surface-Emitting Lasers with a Topside Monolithic Curved Mirror |
| title_short | Long-Cavity M-Plane GaN-Based Vertical-Cavity Surface-Emitting Lasers with a Topside Monolithic Curved Mirror |
| title_sort | long cavity m plane gan based vertical cavity surface emitting lasers with a topside monolithic curved mirror |
| topic | GaN VCSEL tunnel junction nanoporous GaN DBR |
| url | https://www.mdpi.com/2304-6732/10/6/646 |
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