Long-Cavity M-Plane GaN-Based Vertical-Cavity Surface-Emitting Lasers with a Topside Monolithic Curved Mirror

Long-Cavity M-Plane GaN-Based Vertical-Cavity Surface-Emitting Lasers with a Topside Monolithic Curved Mirror

We report long-cavity (60.5 λ) GaN-based vertical-cavity surface-emitting lasers with a topside monolithic GaN concave mirror, a buried tunnel junction current aperture, and a bottomside nanoporous GaN distributed Bragg reflector. Under pulsed operation, a VCSEL with a 9 µm aperture had a threshold...

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Bibliographic Details
Main Authors: Nathan C. Palmquist, Ryan Anderson, Jared A. Kearns, Joonho Back, Emily Trageser, Stephen Gee, Steven P. Denbaars, Shuji Nakamura
Format: Article
Language:English
Published: MDPI AG 2023-06-01
Series:Photonics
Subjects:
GaN VCSEL
tunnel junction
nanoporous GaN DBR
Online Access:https://www.mdpi.com/2304-6732/10/6/646

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