Transport and Field Emission Properties of MoS2 Bilayers
We report the electrical characterization and field emission properties of MoS 2 bilayers deposited on...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2018-03-01
|
| Series: | Nanomaterials |
| Subjects: | |
| Online Access: | http://www.mdpi.com/2079-4991/8/3/151 |
| _version_ | 1818245393835622400 |
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| author | Francesca Urban Maurizio Passacantando Filippo Giubileo Laura Iemmo Antonio Di Bartolomeo |
| author_facet | Francesca Urban Maurizio Passacantando Filippo Giubileo Laura Iemmo Antonio Di Bartolomeo |
| author_sort | Francesca Urban |
| collection | DOAJ |
| description | We report the electrical characterization and field emission properties of
MoS
2
bilayers deposited on a
SiO
2
/
Si
substrate. Current–voltage characteristics are measured in the back-gate transistor configuration, with
Ti
contacts patterned by electron beam lithography. We confirm the n-type character of as-grown
MoS
2
and we report normally-on field-effect transistors. Local characterization of field emission is performed inside a scanning electron microscope chamber with piezo-controlled tungsten tips working as the anode and the cathode. We demonstrate that an electric field of
~
200
V
/
μ
m
is able to extract current from the flat part of
MoS
2
bilayers, which can therefore be conveniently exploited for field emission applications even in low field enhancement configurations. We show that a Fowler–Nordheim model, modified to account for electron confinement in two-dimensional (2D) materials, fully describes the emission process. |
| first_indexed | 2024-12-12T14:32:13Z |
| format | Article |
| id | doaj.art-c6fa981b0f6d4f35918ed00562a5dc30 |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-12-12T14:32:13Z |
| publishDate | 2018-03-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-c6fa981b0f6d4f35918ed00562a5dc302022-12-22T00:21:29ZengMDPI AGNanomaterials2079-49912018-03-018315110.3390/nano8030151nano8030151Transport and Field Emission Properties of MoS2 BilayersFrancesca Urban0Maurizio Passacantando1Filippo Giubileo2Laura Iemmo3Antonio Di Bartolomeo4Department of Physics “E.R. Caianiello”, University of Salerno, 84084 Fisciano, ItalyDepartment of Physical and Chemical Sciences, University of L’Aquila, and CNR-SPIN L’Aquila, 67100 L’Aquila, ItalyCNR-SPIN Salerno, 84084 Fisciano, ItalyDepartment of Physics “E.R. Caianiello”, University of Salerno, 84084 Fisciano, ItalyDepartment of Physics “E.R. Caianiello”, University of Salerno, 84084 Fisciano, ItalyWe report the electrical characterization and field emission properties of MoS 2 bilayers deposited on a SiO 2 / Si substrate. Current–voltage characteristics are measured in the back-gate transistor configuration, with Ti contacts patterned by electron beam lithography. We confirm the n-type character of as-grown MoS 2 and we report normally-on field-effect transistors. Local characterization of field emission is performed inside a scanning electron microscope chamber with piezo-controlled tungsten tips working as the anode and the cathode. We demonstrate that an electric field of ~ 200 V / μ m is able to extract current from the flat part of MoS 2 bilayers, which can therefore be conveniently exploited for field emission applications even in low field enhancement configurations. We show that a Fowler–Nordheim model, modified to account for electron confinement in two-dimensional (2D) materials, fully describes the emission process.http://www.mdpi.com/2079-4991/8/3/151Transition metal dichalcogenidesMoS2field-effect transistorfield emission |
| spellingShingle | Francesca Urban Maurizio Passacantando Filippo Giubileo Laura Iemmo Antonio Di Bartolomeo Transport and Field Emission Properties of MoS2 Bilayers Nanomaterials Transition metal dichalcogenides MoS2 field-effect transistor field emission |
| title | Transport and Field Emission Properties of MoS2 Bilayers |
| title_full | Transport and Field Emission Properties of MoS2 Bilayers |
| title_fullStr | Transport and Field Emission Properties of MoS2 Bilayers |
| title_full_unstemmed | Transport and Field Emission Properties of MoS2 Bilayers |
| title_short | Transport and Field Emission Properties of MoS2 Bilayers |
| title_sort | transport and field emission properties of mos2 bilayers |
| topic | Transition metal dichalcogenides MoS2 field-effect transistor field emission |
| url | http://www.mdpi.com/2079-4991/8/3/151 |
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