Electrophysical Properties of PZT-Type Ceramics Obtained by Two Sintering Methods

This study demonstrates the impact of two sintering techniques on the fundamental properties of doped PZT-type ceramic materials (with Mn<sup>4+</sup>, Sb<sup>3+</sup>, Gd<sup>3+</sup>, and W<sup>6+</sup>), with the general chemical formula Pb(Zr<su...

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Main Authors: Przemysław Niemiec, Dariusz Bochenek, Grzegorz Dercz
Format: Article
Language:English
Published: MDPI AG 2023-10-01
Series:Applied Sciences
Subjects:
Online Access:https://www.mdpi.com/2076-3417/13/20/11195
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author Przemysław Niemiec
Dariusz Bochenek
Grzegorz Dercz
author_facet Przemysław Niemiec
Dariusz Bochenek
Grzegorz Dercz
author_sort Przemysław Niemiec
collection DOAJ
description This study demonstrates the impact of two sintering techniques on the fundamental properties of doped PZT-type ceramic materials (with Mn<sup>4+</sup>, Sb<sup>3+</sup>, Gd<sup>3+</sup>, and W<sup>6+</sup>), with the general chemical formula Pb(Zr<sub>0.49</sub>Ti<sub>0.51</sub>)<sub>0.94</sub>Mn<sub>0.021</sub>Sb<sub>0.016</sub>Gd<sub>0.012</sub>W<sub>0.012</sub>O<sub>3</sub>. The synthesis of ceramic powders was carried out through the calcination method. Two different methods were used in the final sintering process: (i) pressureless sintering (PS) and (ii) hot pressing (HP). The PZT-type ceramics were subjected to electrophysical measurements, encompassing various analyses such as X-ray diffraction (XRD), microstructure (scanning electron microscopy (SEM)), ferroelectric and dielectric properties, and DC electrical conductivity. The analysis of the crystal structure at room temperature showed that the material belongs to the perovskite structure from the tetragonal phase (P4<i>mm</i> space group) without foreign phases. Both sintering methods ensure obtaining the material with appropriate dielectric and ferroelectric parameters, and the tests carried out verified that the ceramic materials have a diverse range of parameters appropriate for use in micromechatronic and microelectronic applications. The obtained ceramic material has high permittivity values, low dielectric loss tangent values, and high resistance. At room temperature, the ceramic samples’ <i>P-E</i> hysteresis loops do not saturate at a field of 3.5 kV/mm (<i>P</i><sub>m</sub> maximum polarization is in the range from 12.24 to 13.47 μC/cm<sup>2</sup>). However, at higher temperatures, the <i>P-E</i> hysteresis loops become highly saturated, and, at 110 °C, the <i>P</i><sub>m</sub> maximum polarization values are in the range from 28.02 to 30.83 μC/cm<sup>2</sup>.
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spelling doaj.art-c70b25d5308f4f758baaa37a5064699a2023-11-19T15:29:51ZengMDPI AGApplied Sciences2076-34172023-10-0113201119510.3390/app132011195Electrophysical Properties of PZT-Type Ceramics Obtained by Two Sintering MethodsPrzemysław Niemiec0Dariusz Bochenek1Grzegorz Dercz2Institute of Materials Engineering, Faculty of Science and Technology, University of Silesia in Katowice, 75 Pułku Piechoty 1a, 41-500 Chorzów, PolandInstitute of Materials Engineering, Faculty of Science and Technology, University of Silesia in Katowice, 75 Pułku Piechoty 1a, 41-500 Chorzów, PolandInstitute of Materials Engineering, Faculty of Science and Technology, University of Silesia in Katowice, 75 Pułku Piechoty 1a, 41-500 Chorzów, PolandThis study demonstrates the impact of two sintering techniques on the fundamental properties of doped PZT-type ceramic materials (with Mn<sup>4+</sup>, Sb<sup>3+</sup>, Gd<sup>3+</sup>, and W<sup>6+</sup>), with the general chemical formula Pb(Zr<sub>0.49</sub>Ti<sub>0.51</sub>)<sub>0.94</sub>Mn<sub>0.021</sub>Sb<sub>0.016</sub>Gd<sub>0.012</sub>W<sub>0.012</sub>O<sub>3</sub>. The synthesis of ceramic powders was carried out through the calcination method. Two different methods were used in the final sintering process: (i) pressureless sintering (PS) and (ii) hot pressing (HP). The PZT-type ceramics were subjected to electrophysical measurements, encompassing various analyses such as X-ray diffraction (XRD), microstructure (scanning electron microscopy (SEM)), ferroelectric and dielectric properties, and DC electrical conductivity. The analysis of the crystal structure at room temperature showed that the material belongs to the perovskite structure from the tetragonal phase (P4<i>mm</i> space group) without foreign phases. Both sintering methods ensure obtaining the material with appropriate dielectric and ferroelectric parameters, and the tests carried out verified that the ceramic materials have a diverse range of parameters appropriate for use in micromechatronic and microelectronic applications. The obtained ceramic material has high permittivity values, low dielectric loss tangent values, and high resistance. At room temperature, the ceramic samples’ <i>P-E</i> hysteresis loops do not saturate at a field of 3.5 kV/mm (<i>P</i><sub>m</sub> maximum polarization is in the range from 12.24 to 13.47 μC/cm<sup>2</sup>). However, at higher temperatures, the <i>P-E</i> hysteresis loops become highly saturated, and, at 110 °C, the <i>P</i><sub>m</sub> maximum polarization values are in the range from 28.02 to 30.83 μC/cm<sup>2</sup>.https://www.mdpi.com/2076-3417/13/20/11195piezoceramicsPZT-type materialsinteringhot pressingdielectric properties
spellingShingle Przemysław Niemiec
Dariusz Bochenek
Grzegorz Dercz
Electrophysical Properties of PZT-Type Ceramics Obtained by Two Sintering Methods
Applied Sciences
piezoceramics
PZT-type material
sintering
hot pressing
dielectric properties
title Electrophysical Properties of PZT-Type Ceramics Obtained by Two Sintering Methods
title_full Electrophysical Properties of PZT-Type Ceramics Obtained by Two Sintering Methods
title_fullStr Electrophysical Properties of PZT-Type Ceramics Obtained by Two Sintering Methods
title_full_unstemmed Electrophysical Properties of PZT-Type Ceramics Obtained by Two Sintering Methods
title_short Electrophysical Properties of PZT-Type Ceramics Obtained by Two Sintering Methods
title_sort electrophysical properties of pzt type ceramics obtained by two sintering methods
topic piezoceramics
PZT-type material
sintering
hot pressing
dielectric properties
url https://www.mdpi.com/2076-3417/13/20/11195
work_keys_str_mv AT przemysławniemiec electrophysicalpropertiesofpzttypeceramicsobtainedbytwosinteringmethods
AT dariuszbochenek electrophysicalpropertiesofpzttypeceramicsobtainedbytwosinteringmethods
AT grzegorzdercz electrophysicalpropertiesofpzttypeceramicsobtainedbytwosinteringmethods