Graphdiyne Saturable Absorber for Passively Q-Switched Ho<sup>3+</sup>-Doped Laser
High-quality all-carbon nanostructure graphdiyne (GDY) saturable absorber was successfully fabricated and saturable absorption properties in the 2 μm region were characterized using a commercial mode-locked laser as a pulsed source. The fabricated GDY was first used as an optical switcher in a passi...
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MDPI AG
2020-09-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/10/9/1848 |
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| author | Cheng Zhang Qianqian Hao Yuqian Zu Mengyu Zong Jia Guo Feng Zhang Yanqi Ge Jie Liu |
| author_facet | Cheng Zhang Qianqian Hao Yuqian Zu Mengyu Zong Jia Guo Feng Zhang Yanqi Ge Jie Liu |
| author_sort | Cheng Zhang |
| collection | DOAJ |
| description | High-quality all-carbon nanostructure graphdiyne (GDY) saturable absorber was successfully fabricated and saturable absorption properties in the 2 μm region were characterized using a commercial mode-locked laser as a pulsed source. The fabricated GDY was first used as an optical switcher in a passively Q-switched Ho laser. Under absorbed pump power of 2.4 W, the maximum average output power and shortest pulse width were 443 mW and 1.38 µs, at a repetition rate of 29.72 kHz. The results suggest that GDY nanomaterial is a promising candidate as an optical modulator for generation of short pulses in Ho-doped lasers at 2.1 μm. |
| first_indexed | 2024-03-10T16:18:57Z |
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| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-10T16:18:57Z |
| publishDate | 2020-09-01 |
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| series | Nanomaterials |
| spelling | doaj.art-c721182453514f95818f1261a099514c2023-11-20T13:52:19ZengMDPI AGNanomaterials2079-49912020-09-01109184810.3390/nano10091848Graphdiyne Saturable Absorber for Passively Q-Switched Ho<sup>3+</sup>-Doped LaserCheng Zhang0Qianqian Hao1Yuqian Zu2Mengyu Zong3Jia Guo4Feng Zhang5Yanqi Ge6Jie Liu7Shandong Provincial Engineering and Technical Center of Light Manipulations and Shandong Provincial Key Laboratory of Optics and Photonic Device, School of Physics and Electronics, Shandong Normal University, Jinan 250358, ChinaShandong Provincial Engineering and Technical Center of Light Manipulations and Shandong Provincial Key Laboratory of Optics and Photonic Device, School of Physics and Electronics, Shandong Normal University, Jinan 250358, ChinaShandong Provincial Engineering and Technical Center of Light Manipulations and Shandong Provincial Key Laboratory of Optics and Photonic Device, School of Physics and Electronics, Shandong Normal University, Jinan 250358, ChinaShandong Provincial Engineering and Technical Center of Light Manipulations and Shandong Provincial Key Laboratory of Optics and Photonic Device, School of Physics and Electronics, Shandong Normal University, Jinan 250358, ChinaInstitute of Microscale Optoelectronics, Collaborative Innovation Center for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen 518060, ChinaInstitute of Microscale Optoelectronics, Collaborative Innovation Center for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen 518060, ChinaInstitute of Microscale Optoelectronics, Collaborative Innovation Center for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen 518060, ChinaShandong Provincial Engineering and Technical Center of Light Manipulations and Shandong Provincial Key Laboratory of Optics and Photonic Device, School of Physics and Electronics, Shandong Normal University, Jinan 250358, ChinaHigh-quality all-carbon nanostructure graphdiyne (GDY) saturable absorber was successfully fabricated and saturable absorption properties in the 2 μm region were characterized using a commercial mode-locked laser as a pulsed source. The fabricated GDY was first used as an optical switcher in a passively Q-switched Ho laser. Under absorbed pump power of 2.4 W, the maximum average output power and shortest pulse width were 443 mW and 1.38 µs, at a repetition rate of 29.72 kHz. The results suggest that GDY nanomaterial is a promising candidate as an optical modulator for generation of short pulses in Ho-doped lasers at 2.1 μm.https://www.mdpi.com/2079-4991/10/9/1848graphdiyne nanomaterialsaturable absorberpassively Q-switchedHo-doped laser2.1 μm |
| spellingShingle | Cheng Zhang Qianqian Hao Yuqian Zu Mengyu Zong Jia Guo Feng Zhang Yanqi Ge Jie Liu Graphdiyne Saturable Absorber for Passively Q-Switched Ho<sup>3+</sup>-Doped Laser Nanomaterials graphdiyne nanomaterial saturable absorber passively Q-switched Ho-doped laser 2.1 μm |
| title | Graphdiyne Saturable Absorber for Passively Q-Switched Ho<sup>3+</sup>-Doped Laser |
| title_full | Graphdiyne Saturable Absorber for Passively Q-Switched Ho<sup>3+</sup>-Doped Laser |
| title_fullStr | Graphdiyne Saturable Absorber for Passively Q-Switched Ho<sup>3+</sup>-Doped Laser |
| title_full_unstemmed | Graphdiyne Saturable Absorber for Passively Q-Switched Ho<sup>3+</sup>-Doped Laser |
| title_short | Graphdiyne Saturable Absorber for Passively Q-Switched Ho<sup>3+</sup>-Doped Laser |
| title_sort | graphdiyne saturable absorber for passively q switched ho sup 3 sup doped laser |
| topic | graphdiyne nanomaterial saturable absorber passively Q-switched Ho-doped laser 2.1 μm |
| url | https://www.mdpi.com/2079-4991/10/9/1848 |
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