Voltage Pulse Driven VO<sub>2</sub> Volatile Resistive Transition Devices as Leaky Integrate-and-Fire Artificial Neurons
In a hardware-based neuromorphic computation system, using emerging nonvolatile memory devices as artificial synapses, which have an inelastic memory characteristic, has attracted considerable interest. In contrast, the elastic artificial neurons have received much less attention. An ideal material...
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MDPI AG
2022-02-01
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| Series: | Electronics |
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| Online Access: | https://www.mdpi.com/2079-9292/11/4/516 |
| _version_ | 1797480971049631744 |
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| author | Zhen Xu Ayrton A. Bernussi Zhaoyang Fan |
| author_facet | Zhen Xu Ayrton A. Bernussi Zhaoyang Fan |
| author_sort | Zhen Xu |
| collection | DOAJ |
| description | In a hardware-based neuromorphic computation system, using emerging nonvolatile memory devices as artificial synapses, which have an inelastic memory characteristic, has attracted considerable interest. In contrast, the elastic artificial neurons have received much less attention. An ideal material system that is suitable for mimicking biological neurons is the one with volatile (or mono-stable) resistive change property. Vanadium dioxide (VO<sub>2</sub>) is a well-known material that exhibits an abrupt and volatile insulator-to-metal transition property. In this work, we experimentally demonstrate that pulse-driven two-terminal VO<sub>2</sub> devices behave in a leaky integrate-and-fire (LIF) manner, and they elastically relax back to their initial value after firing, thus, mimicking the behavior of biological neurons. The VO<sub>2</sub> device with a channel length of 20 µm can be driven to fire by a single long-duration pulse (>83 µs) or multiple short-duration pulses. We further model the VO<sub>2</sub> devices as resistive networks based on their granular domain structure, with resistivities corresponding to the insulator or metallic states. Simulation results confirm that the volatile resistive transition under voltage pulse driving is caused by the formation of a metallic filament in an avalanche-like process, while this volatile metallic filament will relax back to the insulating state at the end of driving pulses. The simulation offers a microscopic view of the dynamic and abrupt filament formation process to explain the experimentally observed LIF behavior. These results suggest that VO<sub>2</sub> insulator–metal transition could be exploited for artificial neurons. |
| first_indexed | 2024-03-09T22:07:51Z |
| format | Article |
| id | doaj.art-c75f194ce8cd4daab0d1c39a0eee7c8d |
| institution | Directory Open Access Journal |
| issn | 2079-9292 |
| language | English |
| last_indexed | 2024-03-09T22:07:51Z |
| publishDate | 2022-02-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Electronics |
| spelling | doaj.art-c75f194ce8cd4daab0d1c39a0eee7c8d2023-11-23T19:38:32ZengMDPI AGElectronics2079-92922022-02-0111451610.3390/electronics11040516Voltage Pulse Driven VO<sub>2</sub> Volatile Resistive Transition Devices as Leaky Integrate-and-Fire Artificial NeuronsZhen Xu0Ayrton A. Bernussi1Zhaoyang Fan2Department of Electrical and Computer Engineering, Nano Tech Center, Texas Tech University, Lubbock, TX 79409, USADepartment of Electrical and Computer Engineering, Nano Tech Center, Texas Tech University, Lubbock, TX 79409, USASchool of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ 85281, USAIn a hardware-based neuromorphic computation system, using emerging nonvolatile memory devices as artificial synapses, which have an inelastic memory characteristic, has attracted considerable interest. In contrast, the elastic artificial neurons have received much less attention. An ideal material system that is suitable for mimicking biological neurons is the one with volatile (or mono-stable) resistive change property. Vanadium dioxide (VO<sub>2</sub>) is a well-known material that exhibits an abrupt and volatile insulator-to-metal transition property. In this work, we experimentally demonstrate that pulse-driven two-terminal VO<sub>2</sub> devices behave in a leaky integrate-and-fire (LIF) manner, and they elastically relax back to their initial value after firing, thus, mimicking the behavior of biological neurons. The VO<sub>2</sub> device with a channel length of 20 µm can be driven to fire by a single long-duration pulse (>83 µs) or multiple short-duration pulses. We further model the VO<sub>2</sub> devices as resistive networks based on their granular domain structure, with resistivities corresponding to the insulator or metallic states. Simulation results confirm that the volatile resistive transition under voltage pulse driving is caused by the formation of a metallic filament in an avalanche-like process, while this volatile metallic filament will relax back to the insulating state at the end of driving pulses. The simulation offers a microscopic view of the dynamic and abrupt filament formation process to explain the experimentally observed LIF behavior. These results suggest that VO<sub>2</sub> insulator–metal transition could be exploited for artificial neurons.https://www.mdpi.com/2079-9292/11/4/516neuromorphic computationartificial neuronsVO<sub>2</sub>volatile resistive transitionleaky integrate-and-fire |
| spellingShingle | Zhen Xu Ayrton A. Bernussi Zhaoyang Fan Voltage Pulse Driven VO<sub>2</sub> Volatile Resistive Transition Devices as Leaky Integrate-and-Fire Artificial Neurons Electronics neuromorphic computation artificial neurons VO<sub>2</sub> volatile resistive transition leaky integrate-and-fire |
| title | Voltage Pulse Driven VO<sub>2</sub> Volatile Resistive Transition Devices as Leaky Integrate-and-Fire Artificial Neurons |
| title_full | Voltage Pulse Driven VO<sub>2</sub> Volatile Resistive Transition Devices as Leaky Integrate-and-Fire Artificial Neurons |
| title_fullStr | Voltage Pulse Driven VO<sub>2</sub> Volatile Resistive Transition Devices as Leaky Integrate-and-Fire Artificial Neurons |
| title_full_unstemmed | Voltage Pulse Driven VO<sub>2</sub> Volatile Resistive Transition Devices as Leaky Integrate-and-Fire Artificial Neurons |
| title_short | Voltage Pulse Driven VO<sub>2</sub> Volatile Resistive Transition Devices as Leaky Integrate-and-Fire Artificial Neurons |
| title_sort | voltage pulse driven vo sub 2 sub volatile resistive transition devices as leaky integrate and fire artificial neurons |
| topic | neuromorphic computation artificial neurons VO<sub>2</sub> volatile resistive transition leaky integrate-and-fire |
| url | https://www.mdpi.com/2079-9292/11/4/516 |
| work_keys_str_mv | AT zhenxu voltagepulsedrivenvosub2subvolatileresistivetransitiondevicesasleakyintegrateandfireartificialneurons AT ayrtonabernussi voltagepulsedrivenvosub2subvolatileresistivetransitiondevicesasleakyintegrateandfireartificialneurons AT zhaoyangfan voltagepulsedrivenvosub2subvolatileresistivetransitiondevicesasleakyintegrateandfireartificialneurons |