Analysis of GAA Junction Less NS FET Towards Analog and RF Applications at 30 nm Regime
This research focuses on a quantum model created using an entirely novel nanosheet FET. The standard model describes the performance of a Gate-all-around (GAA) Junction-less (JL) nanosheet device with a gate dielectric of SiO<sub>2</sub> and HfO<sub>2</sub>, each having a thi...
Main Authors: | Asisa Kumar Panigrahy, Sudheer Hanumanthakari, Shridhar B. Devamane, Shruti Bhargava Choubey, M. Prasad, D. Somasundaram, N. Kumareshan, N. Arun Vignesh, Gnanasaravanan Subramaniam, Durga Prakash M, Raghunandan Swain |
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Format: | Article |
Language: | English |
Published: |
IEEE
2024-01-01
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Series: | IEEE Open Journal of Nanotechnology |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/10433722/ |
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