Effect of Polarization on Performance of Inverted Solar Cells Based on Molecular Ferroelectric 1,6-Hexanediamine Pentaiodide Bismuth with PCBM as Electron Transport Layer
The depolarization field of ferroelectric photovoltaic materials can enhance the separation and transport of photogenerated carriers, which will improve the performance of photovoltaic devices, thus attracting the attention of researchers. In this paper, a narrow bandgap molecular ferroelectric Hexa...
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2021-11-01
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author | Xiaolan Wang Xiaoping Zou Jialin Zhu Chunqian Zhang Jin Cheng Junming Li Zixiao Zhou Yifei Wang Xiaotong Li Keke Song Baokai Ren |
author_facet | Xiaolan Wang Xiaoping Zou Jialin Zhu Chunqian Zhang Jin Cheng Junming Li Zixiao Zhou Yifei Wang Xiaotong Li Keke Song Baokai Ren |
author_sort | Xiaolan Wang |
collection | DOAJ |
description | The depolarization field of ferroelectric photovoltaic materials can enhance the separation and transport of photogenerated carriers, which will improve the performance of photovoltaic devices, thus attracting the attention of researchers. In this paper, a narrow bandgap molecular ferroelectric Hexane-1,6-diammonium pentaiodobismuth (HDA-BiI<sub>5</sub>) was selected as the photo absorption layer for the fabrication of solar cells. After optimizing the ferroelectric thin film by the antisolvent process, the effect of different polarization voltages on the performance of ferroelectric devices was studied. The results showed that there was a significant increase in short-circuit current density, and the photoelectric conversion efficiency showed an overall increasing trend. Finally, we analyzed the internal mechanism of the effect of polarization on the device. |
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spelling | doaj.art-c7a79c895cd944a4babb7fd47f1ac1912023-12-03T13:24:29ZengMDPI AGApplied Sciences2076-34172021-11-0111211049410.3390/app112110494Effect of Polarization on Performance of Inverted Solar Cells Based on Molecular Ferroelectric 1,6-Hexanediamine Pentaiodide Bismuth with PCBM as Electron Transport LayerXiaolan Wang0Xiaoping Zou1Jialin Zhu2Chunqian Zhang3Jin Cheng4Junming Li5Zixiao Zhou6Yifei Wang7Xiaotong Li8Keke Song9Baokai Ren10Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Sensor, Beijing Key Laboratory for Optoelectronic Measurement Technology, MOE Key Laboratory for Modern Measurement, Control Technology, School of Automation, Jianxiangqiao Campus, Beijing Information Science, Technology University, Beijing 100101, ChinaBeijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Sensor, Beijing Key Laboratory for Optoelectronic Measurement Technology, MOE Key Laboratory for Modern Measurement, Control Technology, School of Automation, Jianxiangqiao Campus, Beijing Information Science, Technology University, Beijing 100101, ChinaBeijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Sensor, Beijing Key Laboratory for Optoelectronic Measurement Technology, MOE Key Laboratory for Modern Measurement, Control Technology, School of Automation, Jianxiangqiao Campus, Beijing Information Science, Technology University, Beijing 100101, ChinaBeijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Sensor, Beijing Key Laboratory for Optoelectronic Measurement Technology, MOE Key Laboratory for Modern Measurement, Control Technology, School of Automation, Jianxiangqiao Campus, Beijing Information Science, Technology University, Beijing 100101, ChinaBeijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Sensor, Beijing Key Laboratory for Optoelectronic Measurement Technology, MOE Key Laboratory for Modern Measurement, Control Technology, School of Automation, Jianxiangqiao Campus, Beijing Information Science, Technology University, Beijing 100101, ChinaBeijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Sensor, Beijing Key Laboratory for Optoelectronic Measurement Technology, MOE Key Laboratory for Modern Measurement, Control Technology, School of Automation, Jianxiangqiao Campus, Beijing Information Science, Technology University, Beijing 100101, ChinaBeijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Sensor, Beijing Key Laboratory for Optoelectronic Measurement Technology, MOE Key Laboratory for Modern Measurement, Control Technology, School of Automation, Jianxiangqiao Campus, Beijing Information Science, Technology University, Beijing 100101, ChinaBeijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Sensor, Beijing Key Laboratory for Optoelectronic Measurement Technology, MOE Key Laboratory for Modern Measurement, Control Technology, School of Automation, Jianxiangqiao Campus, Beijing Information Science, Technology University, Beijing 100101, ChinaBeijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Sensor, Beijing Key Laboratory for Optoelectronic Measurement Technology, MOE Key Laboratory for Modern Measurement, Control Technology, School of Automation, Jianxiangqiao Campus, Beijing Information Science, Technology University, Beijing 100101, ChinaBeijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Sensor, Beijing Key Laboratory for Optoelectronic Measurement Technology, MOE Key Laboratory for Modern Measurement, Control Technology, School of Automation, Jianxiangqiao Campus, Beijing Information Science, Technology University, Beijing 100101, ChinaBeijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Sensor, Beijing Key Laboratory for Optoelectronic Measurement Technology, MOE Key Laboratory for Modern Measurement, Control Technology, School of Automation, Jianxiangqiao Campus, Beijing Information Science, Technology University, Beijing 100101, ChinaThe depolarization field of ferroelectric photovoltaic materials can enhance the separation and transport of photogenerated carriers, which will improve the performance of photovoltaic devices, thus attracting the attention of researchers. In this paper, a narrow bandgap molecular ferroelectric Hexane-1,6-diammonium pentaiodobismuth (HDA-BiI<sub>5</sub>) was selected as the photo absorption layer for the fabrication of solar cells. After optimizing the ferroelectric thin film by the antisolvent process, the effect of different polarization voltages on the performance of ferroelectric devices was studied. The results showed that there was a significant increase in short-circuit current density, and the photoelectric conversion efficiency showed an overall increasing trend. Finally, we analyzed the internal mechanism of the effect of polarization on the device.https://www.mdpi.com/2076-3417/11/21/10494ferroelectricssolar energy materialsthin films |
spellingShingle | Xiaolan Wang Xiaoping Zou Jialin Zhu Chunqian Zhang Jin Cheng Junming Li Zixiao Zhou Yifei Wang Xiaotong Li Keke Song Baokai Ren Effect of Polarization on Performance of Inverted Solar Cells Based on Molecular Ferroelectric 1,6-Hexanediamine Pentaiodide Bismuth with PCBM as Electron Transport Layer Applied Sciences ferroelectrics solar energy materials thin films |
title | Effect of Polarization on Performance of Inverted Solar Cells Based on Molecular Ferroelectric 1,6-Hexanediamine Pentaiodide Bismuth with PCBM as Electron Transport Layer |
title_full | Effect of Polarization on Performance of Inverted Solar Cells Based on Molecular Ferroelectric 1,6-Hexanediamine Pentaiodide Bismuth with PCBM as Electron Transport Layer |
title_fullStr | Effect of Polarization on Performance of Inverted Solar Cells Based on Molecular Ferroelectric 1,6-Hexanediamine Pentaiodide Bismuth with PCBM as Electron Transport Layer |
title_full_unstemmed | Effect of Polarization on Performance of Inverted Solar Cells Based on Molecular Ferroelectric 1,6-Hexanediamine Pentaiodide Bismuth with PCBM as Electron Transport Layer |
title_short | Effect of Polarization on Performance of Inverted Solar Cells Based on Molecular Ferroelectric 1,6-Hexanediamine Pentaiodide Bismuth with PCBM as Electron Transport Layer |
title_sort | effect of polarization on performance of inverted solar cells based on molecular ferroelectric 1 6 hexanediamine pentaiodide bismuth with pcbm as electron transport layer |
topic | ferroelectrics solar energy materials thin films |
url | https://www.mdpi.com/2076-3417/11/21/10494 |
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