Anisotropic Confinement, Electronic Coupling and Strain Induced Effects Detected by Valence-Band Anisotropy in Self-Assembled Quantum Dots
<p>Abstract</p> <p>A method to determine the effects of the geometry and lateral ordering on the electronic properties of an array of one-dimensional self-assembled quantum dots is discussed. A model that takes into account the valence-band anisotropic effective masses and strain e...
| Main Authors: | , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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SpringerOpen
2011-01-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | http://www.nanoscalereslett.com/content/6/1/56 |
| _version_ | 1797712358186942464 |
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| author | Marega E Liang BL Mazur Yu Salamo GJ Malachias A Trallero-Giner C Villegas-Lelovsky L Teodoro MD Lopez-Richard V Calseverino C Marques GE |
| author_facet | Marega E Liang BL Mazur Yu Salamo GJ Malachias A Trallero-Giner C Villegas-Lelovsky L Teodoro MD Lopez-Richard V Calseverino C Marques GE |
| author_sort | Marega E |
| collection | DOAJ |
| description | <p>Abstract</p> <p>A method to determine the effects of the geometry and lateral ordering on the electronic properties of an array of one-dimensional self-assembled quantum dots is discussed. A model that takes into account the valence-band anisotropic effective masses and strain effects must be used to describe the behavior of the photoluminescence emission, proposed as a clean tool for the characterization of dot anisotropy and/or inter-dot coupling. Under special growth conditions, such as substrate temperature and Arsenic background, 1D chains of In<sub>0.4</sub>Ga<sub>0.6</sub> As quantum dots were grown by molecular beam epitaxy. Grazing-incidence X-ray diffraction measurements directly evidence the strong strain anisotropy due to the formation of quantum dot chains, probed by polarization-resolved low-temperature photoluminescence. The results are in fair good agreement with the proposed model.</p> |
| first_indexed | 2024-03-12T07:20:34Z |
| format | Article |
| id | doaj.art-c7b6e153ab6743e1af126965691ec224 |
| institution | Directory Open Access Journal |
| issn | 1931-7573 1556-276X |
| language | English |
| last_indexed | 2024-03-12T07:20:34Z |
| publishDate | 2011-01-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-c7b6e153ab6743e1af126965691ec2242023-09-02T22:32:00ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2011-01-016156Anisotropic Confinement, Electronic Coupling and Strain Induced Effects Detected by Valence-Band Anisotropy in Self-Assembled Quantum DotsMarega ELiang BLMazur YuSalamo GJMalachias ATrallero-Giner CVillegas-Lelovsky LTeodoro MDLopez-Richard VCalseverino CMarques GE<p>Abstract</p> <p>A method to determine the effects of the geometry and lateral ordering on the electronic properties of an array of one-dimensional self-assembled quantum dots is discussed. A model that takes into account the valence-band anisotropic effective masses and strain effects must be used to describe the behavior of the photoluminescence emission, proposed as a clean tool for the characterization of dot anisotropy and/or inter-dot coupling. Under special growth conditions, such as substrate temperature and Arsenic background, 1D chains of In<sub>0.4</sub>Ga<sub>0.6</sub> As quantum dots were grown by molecular beam epitaxy. Grazing-incidence X-ray diffraction measurements directly evidence the strong strain anisotropy due to the formation of quantum dot chains, probed by polarization-resolved low-temperature photoluminescence. The results are in fair good agreement with the proposed model.</p>http://www.nanoscalereslett.com/content/6/1/56Molecular beam epitaxySelf-assembled quantum dotsInter-dot couplingAnisotropic effectsLinear polarized photoluminescence emissionGrazing-incidence X-ray diffraction synchrotronOptoelectronic |
| spellingShingle | Marega E Liang BL Mazur Yu Salamo GJ Malachias A Trallero-Giner C Villegas-Lelovsky L Teodoro MD Lopez-Richard V Calseverino C Marques GE Anisotropic Confinement, Electronic Coupling and Strain Induced Effects Detected by Valence-Band Anisotropy in Self-Assembled Quantum Dots Nanoscale Research Letters Molecular beam epitaxy Self-assembled quantum dots Inter-dot coupling Anisotropic effects Linear polarized photoluminescence emission Grazing-incidence X-ray diffraction synchrotron Optoelectronic |
| title | Anisotropic Confinement, Electronic Coupling and Strain Induced Effects Detected by Valence-Band Anisotropy in Self-Assembled Quantum Dots |
| title_full | Anisotropic Confinement, Electronic Coupling and Strain Induced Effects Detected by Valence-Band Anisotropy in Self-Assembled Quantum Dots |
| title_fullStr | Anisotropic Confinement, Electronic Coupling and Strain Induced Effects Detected by Valence-Band Anisotropy in Self-Assembled Quantum Dots |
| title_full_unstemmed | Anisotropic Confinement, Electronic Coupling and Strain Induced Effects Detected by Valence-Band Anisotropy in Self-Assembled Quantum Dots |
| title_short | Anisotropic Confinement, Electronic Coupling and Strain Induced Effects Detected by Valence-Band Anisotropy in Self-Assembled Quantum Dots |
| title_sort | anisotropic confinement electronic coupling and strain induced effects detected by valence band anisotropy in self assembled quantum dots |
| topic | Molecular beam epitaxy Self-assembled quantum dots Inter-dot coupling Anisotropic effects Linear polarized photoluminescence emission Grazing-incidence X-ray diffraction synchrotron Optoelectronic |
| url | http://www.nanoscalereslett.com/content/6/1/56 |
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