Selective-Area Epitaxy of InGaAsP Buffer Multilayer for In-Plane InAs Nanowire Integration
In order to use III–V compound semiconductors as active channel materials in advanced electronic and quantum devices, it is important to achieve a good epitaxial growth on silicon substrates. As a first step toward this, we report on the selective-area growth of GaP/InGaP/InP/InAsP buffer layer nano...
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MDPI AG
2022-03-01
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| Series: | Materials |
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| Online Access: | https://www.mdpi.com/1996-1944/15/7/2543 |
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| author | Valentina Zannier Ang Li Francesca Rossi Sachin Yadav Karl Petersson Lucia Sorba |
| author_facet | Valentina Zannier Ang Li Francesca Rossi Sachin Yadav Karl Petersson Lucia Sorba |
| author_sort | Valentina Zannier |
| collection | DOAJ |
| description | In order to use III–V compound semiconductors as active channel materials in advanced electronic and quantum devices, it is important to achieve a good epitaxial growth on silicon substrates. As a first step toward this, we report on the selective-area growth of GaP/InGaP/InP/InAsP buffer layer nanotemplates on GaP substrates which are closely lattice-matched to silicon, suitable for the integration of in-plane InAs nanowires. Scanning electron microscopy reveals a perfect surface selectivity and uniform layer growth inside 150 and 200 nm large SiO<sub>2</sub> mask openings. Compositional and structural characterization of the optimized structure performed by transmission electron microscopy shows the evolution of the major facet planes and allows a strain distribution analysis. Chemically uniform layers with well-defined heterointerfaces are obtained, and the topmost InAs layer is free from any dislocation. Our study demonstrates that a growth sequence of thin layers with progressively increasing lattice parameters is effective to efficiently relax the strain and eventually obtain high quality in-plane InAs nanowires on large lattice-mismatched substrates. |
| first_indexed | 2024-03-09T11:40:36Z |
| format | Article |
| id | doaj.art-c7dc927ebf284ffc81958f06a00f38e6 |
| institution | Directory Open Access Journal |
| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-03-09T11:40:36Z |
| publishDate | 2022-03-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Materials |
| spelling | doaj.art-c7dc927ebf284ffc81958f06a00f38e62023-11-30T23:33:36ZengMDPI AGMaterials1996-19442022-03-01157254310.3390/ma15072543Selective-Area Epitaxy of InGaAsP Buffer Multilayer for In-Plane InAs Nanowire IntegrationValentina Zannier0Ang Li1Francesca Rossi2Sachin Yadav3Karl Petersson4Lucia Sorba5NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza San Silvestro 12, I-56127 Pisa, ItalyBeijing Key Laboratory of Microstructure and Properties of Solids, Beijing University of Technology, Beijing 100124, ChinaIMEM-CNR, Parco Area delle Scienze 37/A, I-43124 Parma, ItalyCenter for Quantum Devices and Microsoft Quantum Lab-Copenhagen, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, DenmarkCenter for Quantum Devices and Microsoft Quantum Lab-Copenhagen, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, DenmarkNEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza San Silvestro 12, I-56127 Pisa, ItalyIn order to use III–V compound semiconductors as active channel materials in advanced electronic and quantum devices, it is important to achieve a good epitaxial growth on silicon substrates. As a first step toward this, we report on the selective-area growth of GaP/InGaP/InP/InAsP buffer layer nanotemplates on GaP substrates which are closely lattice-matched to silicon, suitable for the integration of in-plane InAs nanowires. Scanning electron microscopy reveals a perfect surface selectivity and uniform layer growth inside 150 and 200 nm large SiO<sub>2</sub> mask openings. Compositional and structural characterization of the optimized structure performed by transmission electron microscopy shows the evolution of the major facet planes and allows a strain distribution analysis. Chemically uniform layers with well-defined heterointerfaces are obtained, and the topmost InAs layer is free from any dislocation. Our study demonstrates that a growth sequence of thin layers with progressively increasing lattice parameters is effective to efficiently relax the strain and eventually obtain high quality in-plane InAs nanowires on large lattice-mismatched substrates.https://www.mdpi.com/1996-1944/15/7/2543selective-area epitaxyin-plane nanowiresInAs |
| spellingShingle | Valentina Zannier Ang Li Francesca Rossi Sachin Yadav Karl Petersson Lucia Sorba Selective-Area Epitaxy of InGaAsP Buffer Multilayer for In-Plane InAs Nanowire Integration Materials selective-area epitaxy in-plane nanowires InAs |
| title | Selective-Area Epitaxy of InGaAsP Buffer Multilayer for In-Plane InAs Nanowire Integration |
| title_full | Selective-Area Epitaxy of InGaAsP Buffer Multilayer for In-Plane InAs Nanowire Integration |
| title_fullStr | Selective-Area Epitaxy of InGaAsP Buffer Multilayer for In-Plane InAs Nanowire Integration |
| title_full_unstemmed | Selective-Area Epitaxy of InGaAsP Buffer Multilayer for In-Plane InAs Nanowire Integration |
| title_short | Selective-Area Epitaxy of InGaAsP Buffer Multilayer for In-Plane InAs Nanowire Integration |
| title_sort | selective area epitaxy of ingaasp buffer multilayer for in plane inas nanowire integration |
| topic | selective-area epitaxy in-plane nanowires InAs |
| url | https://www.mdpi.com/1996-1944/15/7/2543 |
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