Progress in the Development of Active-Matrix Quantum-Dot Light-Emitting Diodes Driven by Non-Si Thin-Film Transistors
This paper aims to discuss the key accomplishments and further prospects of active-matrix (AM) quantum-dot (QD) light-emitting diodes (QLEDs) display. We present an overview and state-of-the-art of QLEDs as a frontplane and non-Si-based thin-film transistors (TFTs) as a backplane to meet the require...
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2022-11-01
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| Online Access: | https://www.mdpi.com/1996-1944/15/23/8511 |
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| author | Geun Woo Baek Yeon Jun Kim Minhyung Lee Yeunwoo Kwon Beomsoo Chun Ganghyun Park Hansol Seo Heesun Yang Jeonghun Kwak |
| author_facet | Geun Woo Baek Yeon Jun Kim Minhyung Lee Yeunwoo Kwon Beomsoo Chun Ganghyun Park Hansol Seo Heesun Yang Jeonghun Kwak |
| author_sort | Geun Woo Baek |
| collection | DOAJ |
| description | This paper aims to discuss the key accomplishments and further prospects of active-matrix (AM) quantum-dot (QD) light-emitting diodes (QLEDs) display. We present an overview and state-of-the-art of QLEDs as a frontplane and non-Si-based thin-film transistors (TFTs) as a backplane to meet the requirements for the next-generation displays, such as flexibility, transparency, low power consumption, fast response, high efficiency, and operational reliability. After a brief introduction, we first review the research on non-Si-based TFTs using metal oxides, transition metal dichalcogenides, and semiconducting carbon nanotubes as the driving unit of display devices. Next, QLED technologies are analyzed in terms of the device structure, device engineering, and QD patterning technique to realize high-performance, full-color AM-QLEDs. Lastly, recent research on the monolithic integration of TFT–QLED is examined, which proposes a new perspective on the integrated device. We anticipate that this review will help the readership understand the fundamentals, current state, and issues on TFTs and QLEDs for future AM-QLED displays. |
| first_indexed | 2024-03-09T17:42:00Z |
| format | Article |
| id | doaj.art-c7efe20175ed4b8bb05dbd260bcc4f96 |
| institution | Directory Open Access Journal |
| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-03-09T17:42:00Z |
| publishDate | 2022-11-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Materials |
| spelling | doaj.art-c7efe20175ed4b8bb05dbd260bcc4f962023-11-24T11:29:25ZengMDPI AGMaterials1996-19442022-11-011523851110.3390/ma15238511Progress in the Development of Active-Matrix Quantum-Dot Light-Emitting Diodes Driven by Non-Si Thin-Film TransistorsGeun Woo Baek0Yeon Jun Kim1Minhyung Lee2Yeunwoo Kwon3Beomsoo Chun4Ganghyun Park5Hansol Seo6Heesun Yang7Jeonghun Kwak8Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Soft Foundry Institute, Seoul National University, Seoul 08826, Republic of KoreaDepartment of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Soft Foundry Institute, Seoul National University, Seoul 08826, Republic of KoreaDepartment of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Soft Foundry Institute, Seoul National University, Seoul 08826, Republic of KoreaDepartment of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Soft Foundry Institute, Seoul National University, Seoul 08826, Republic of KoreaDepartment of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Soft Foundry Institute, Seoul National University, Seoul 08826, Republic of KoreaDepartment of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Soft Foundry Institute, Seoul National University, Seoul 08826, Republic of KoreaDepartment of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Soft Foundry Institute, Seoul National University, Seoul 08826, Republic of KoreaDepartment of Materials Science and Engineering, Hongik University, Seoul 04066, Republic of KoreaDepartment of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Soft Foundry Institute, Seoul National University, Seoul 08826, Republic of KoreaThis paper aims to discuss the key accomplishments and further prospects of active-matrix (AM) quantum-dot (QD) light-emitting diodes (QLEDs) display. We present an overview and state-of-the-art of QLEDs as a frontplane and non-Si-based thin-film transistors (TFTs) as a backplane to meet the requirements for the next-generation displays, such as flexibility, transparency, low power consumption, fast response, high efficiency, and operational reliability. After a brief introduction, we first review the research on non-Si-based TFTs using metal oxides, transition metal dichalcogenides, and semiconducting carbon nanotubes as the driving unit of display devices. Next, QLED technologies are analyzed in terms of the device structure, device engineering, and QD patterning technique to realize high-performance, full-color AM-QLEDs. Lastly, recent research on the monolithic integration of TFT–QLED is examined, which proposes a new perspective on the integrated device. We anticipate that this review will help the readership understand the fundamentals, current state, and issues on TFTs and QLEDs for future AM-QLED displays.https://www.mdpi.com/1996-1944/15/23/8511active-matrixquantum-dot light-emitting diodesthin film transistorsmetal oxidestransition metal dichalcogenidescarbon nanotubes |
| spellingShingle | Geun Woo Baek Yeon Jun Kim Minhyung Lee Yeunwoo Kwon Beomsoo Chun Ganghyun Park Hansol Seo Heesun Yang Jeonghun Kwak Progress in the Development of Active-Matrix Quantum-Dot Light-Emitting Diodes Driven by Non-Si Thin-Film Transistors Materials active-matrix quantum-dot light-emitting diodes thin film transistors metal oxides transition metal dichalcogenides carbon nanotubes |
| title | Progress in the Development of Active-Matrix Quantum-Dot Light-Emitting Diodes Driven by Non-Si Thin-Film Transistors |
| title_full | Progress in the Development of Active-Matrix Quantum-Dot Light-Emitting Diodes Driven by Non-Si Thin-Film Transistors |
| title_fullStr | Progress in the Development of Active-Matrix Quantum-Dot Light-Emitting Diodes Driven by Non-Si Thin-Film Transistors |
| title_full_unstemmed | Progress in the Development of Active-Matrix Quantum-Dot Light-Emitting Diodes Driven by Non-Si Thin-Film Transistors |
| title_short | Progress in the Development of Active-Matrix Quantum-Dot Light-Emitting Diodes Driven by Non-Si Thin-Film Transistors |
| title_sort | progress in the development of active matrix quantum dot light emitting diodes driven by non si thin film transistors |
| topic | active-matrix quantum-dot light-emitting diodes thin film transistors metal oxides transition metal dichalcogenides carbon nanotubes |
| url | https://www.mdpi.com/1996-1944/15/23/8511 |
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