Molecular dynamics simulations and experimental studies on low-temperature growth of GaN

Molecular dynamics simulations and experimental studies on low-temperature growth of GaN

Growth mechanisms of (0001) wurtzite GaN films at low temperature are investigated by molecular dynamics simulations and experiments. The crystallization properties of GaN films deteriorate dramatically at low temperature due to the limited energy available for atomic surface migration and incorpora...

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Bibliographic Details
Main Authors:	Xiang Li, Yi Luo, Lai Wang, Jian Wang, Zhibiao Hao, Changzheng Sun, Yanjun Han, Bing Xiong, Hongtao Li
Format:	Article
Language:	English
Published:	IOP Publishing 2024-01-01
Series:	Materials Research Express
Subjects:	molecular dynamics simulations low-temperature growth argon plasma treatment ICP-MOCVD GaN films
Online Access:	https://doi.org/10.1088/2053-1591/ad26a7

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