High-k dielectrics on (100) and (110) n-InAs: Physical and electrical characterizations
Two high-k dielectric materials (Al2O3 and HfO2) were deposited on n-type (100) and (110) InAs surface orientations to investigate physical properties of the oxide/semiconductor interfaces and the interface trap density (Dit). X-ray photoelectron spectroscopy analyses (XPS) for native oxides of (100...
| Main Authors: | , , , , , , , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2014-04-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4871187 |
| _version_ | 1819261004386664448 |
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| author | C. H. Wang G. Doornbos G. Astromskas G. Vellianitis R. Oxland M. C. Holland M. L. Huang C. H. Lin C. H. Hsieh Y. S. Chang T. L. Lee Y. Y. Chen P. Ramvall E. Lind W. C. Hsu L.-E. Wernersson R. Droopad M. Passlack C. H. Diaz |
| author_facet | C. H. Wang G. Doornbos G. Astromskas G. Vellianitis R. Oxland M. C. Holland M. L. Huang C. H. Lin C. H. Hsieh Y. S. Chang T. L. Lee Y. Y. Chen P. Ramvall E. Lind W. C. Hsu L.-E. Wernersson R. Droopad M. Passlack C. H. Diaz |
| author_sort | C. H. Wang |
| collection | DOAJ |
| description | Two high-k dielectric materials (Al2O3 and HfO2) were deposited on n-type (100) and (110) InAs surface orientations to investigate physical properties of the oxide/semiconductor interfaces and the interface trap density (Dit). X-ray photoelectron spectroscopy analyses (XPS) for native oxides of (100) and (110) as-grown n-InAs epi wafers show an increase in As-oxide on the (100) surface and an increase in InOx on the (110) surface. In addition, XPS analyses of high-k (Al2O3 and HfO2) on n-InAs epi show that the intrinsic native oxide difference between (100) and (110) epi surfaces were eliminated by applying conventional in-situ pre-treatment (TriMethyAluminium (TMA)) before the high-k deposition. The capacitance-voltage (C-V) characterization of HfO2 and Al2O3 MOSCAPs on both types of n-InAs surfaces shows very similar C-V curves. The interface trap density (Dit) profiles show Dit minima of 6.1 × 1012/6.5 × 1012 and 6.6 × 1012/7.3 × 1012 cm−2 eV−1 for Al2O3 and HfO2, respectively for (100) and (110) InAs surfaces. The similar interface trap density (Dit) on (100) and (110) surface orientation were observed, which is beneficial to future InAs FinFET device with both (100) and (110) surface channel orientations present. |
| first_indexed | 2024-12-23T19:34:54Z |
| format | Article |
| id | doaj.art-c841c504d9fa439b858a0ea944715b3b |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-23T19:34:54Z |
| publishDate | 2014-04-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-c841c504d9fa439b858a0ea944715b3b2022-12-21T17:33:49ZengAIP Publishing LLCAIP Advances2158-32262014-04-0144047108047108-910.1063/1.4871187008404ADVHigh-k dielectrics on (100) and (110) n-InAs: Physical and electrical characterizationsC. H. Wang0G. Doornbos1G. Astromskas2G. Vellianitis3R. Oxland4M. C. Holland5M. L. Huang6C. H. Lin7C. H. Hsieh8Y. S. Chang9T. L. Lee10Y. Y. Chen11P. Ramvall12E. Lind13W. C. Hsu14L.-E. Wernersson15R. Droopad16M. Passlack17C. H. Diaz18Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 701, R.O.CTSMC, Kapeldreef 75, 3001 Leuven, BelgiumTSMC, Kapeldreef 75, 3001 Leuven, BelgiumTSMC, Kapeldreef 75, 3001 Leuven, BelgiumTSMC, Kapeldreef 75, 3001 Leuven, BelgiumTSMC, Kapeldreef 75, 3001 Leuven, BelgiumTSMC, 168 Park Ave. 2, Hsinchu Science Park, Hsinchu, Taiwan 300, R.O.C.TSMC, 168 Park Ave. 2, Hsinchu Science Park, Hsinchu, Taiwan 300, R.O.C.TSMC, 168 Park Ave. 2, Hsinchu Science Park, Hsinchu, Taiwan 300, R.O.C.TSMC, 168 Park Ave. 2, Hsinchu Science Park, Hsinchu, Taiwan 300, R.O.C.TSMC, 168 Park Ave. 2, Hsinchu Science Park, Hsinchu, Taiwan 300, R.O.C.TSMC, 168 Park Ave. 2, Hsinchu Science Park, Hsinchu, Taiwan 300, R.O.C.Lund University, Box 118, 22100 Lund, SwedenLund University, Box 118, 22100 Lund, SwedenInstitute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 701, R.O.CLund University, Box 118, 22100 Lund, SwedenIngram School of Engineering, Texas State University, San Marcos, TX 78666, USATSMC, Kapeldreef 75, 3001 Leuven, BelgiumTSMC, 168 Park Ave. 2, Hsinchu Science Park, Hsinchu, Taiwan 300, R.O.C.Two high-k dielectric materials (Al2O3 and HfO2) were deposited on n-type (100) and (110) InAs surface orientations to investigate physical properties of the oxide/semiconductor interfaces and the interface trap density (Dit). X-ray photoelectron spectroscopy analyses (XPS) for native oxides of (100) and (110) as-grown n-InAs epi wafers show an increase in As-oxide on the (100) surface and an increase in InOx on the (110) surface. In addition, XPS analyses of high-k (Al2O3 and HfO2) on n-InAs epi show that the intrinsic native oxide difference between (100) and (110) epi surfaces were eliminated by applying conventional in-situ pre-treatment (TriMethyAluminium (TMA)) before the high-k deposition. The capacitance-voltage (C-V) characterization of HfO2 and Al2O3 MOSCAPs on both types of n-InAs surfaces shows very similar C-V curves. The interface trap density (Dit) profiles show Dit minima of 6.1 × 1012/6.5 × 1012 and 6.6 × 1012/7.3 × 1012 cm−2 eV−1 for Al2O3 and HfO2, respectively for (100) and (110) InAs surfaces. The similar interface trap density (Dit) on (100) and (110) surface orientation were observed, which is beneficial to future InAs FinFET device with both (100) and (110) surface channel orientations present.http://dx.doi.org/10.1063/1.4871187 |
| spellingShingle | C. H. Wang G. Doornbos G. Astromskas G. Vellianitis R. Oxland M. C. Holland M. L. Huang C. H. Lin C. H. Hsieh Y. S. Chang T. L. Lee Y. Y. Chen P. Ramvall E. Lind W. C. Hsu L.-E. Wernersson R. Droopad M. Passlack C. H. Diaz High-k dielectrics on (100) and (110) n-InAs: Physical and electrical characterizations AIP Advances |
| title | High-k dielectrics on (100) and (110) n-InAs: Physical and electrical characterizations |
| title_full | High-k dielectrics on (100) and (110) n-InAs: Physical and electrical characterizations |
| title_fullStr | High-k dielectrics on (100) and (110) n-InAs: Physical and electrical characterizations |
| title_full_unstemmed | High-k dielectrics on (100) and (110) n-InAs: Physical and electrical characterizations |
| title_short | High-k dielectrics on (100) and (110) n-InAs: Physical and electrical characterizations |
| title_sort | high k dielectrics on 100 and 110 n inas physical and electrical characterizations |
| url | http://dx.doi.org/10.1063/1.4871187 |
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