Effects of Al on epitaxial graphene grown on 6H-SiC(0001)
Aluminum was deposited on epitaxial monolayer-grown graphene on SiC(0001). The effects of annealing up to 1200 °C on the surface and interface morphology, chemical composition, and electron band structure were analyzed in situ by synchrotron-based techniques at the MAX Laboratory. After heating at a...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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IOP Publishing
2014-01-01
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| Series: | Materials Research Express |
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| Online Access: | https://doi.org/10.1088/2053-1591/1/1/015606 |
| _version_ | 1797747261373939712 |
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| author | C Xia L I Johansson A A Zakharov L Hultman C Virojanadara |
| author_facet | C Xia L I Johansson A A Zakharov L Hultman C Virojanadara |
| author_sort | C Xia |
| collection | DOAJ |
| description | Aluminum was deposited on epitaxial monolayer-grown graphene on SiC(0001). The effects of annealing up to 1200 °C on the surface and interface morphology, chemical composition, and electron band structure were analyzed in situ by synchrotron-based techniques at the MAX Laboratory. After heating at around 400 °C, Al islands or droplets are observed on the surface and the collected Si 2p, Al 2p, and C 1s core levels spectra indicate Al intercalation at the graphene SiC interface. Also, the original single π -band splits into two, indicating decoupling of the carbon buffer layer and the formation of a quasi-free-standing bilayer-like electronic structure. Further heating at higher temperatures from 700 to 900 °C yields additional chemical reactions. Broader core level spectra are then observed and clear changes in the π -bands near the Dirac point are detected. More electron doping was detected at this stage since one of the π -bands has shifted to about 1.1 eV below the Fermi level. Different ordered phases of (7 × 7), (4 × 4), (1 × 1) _Al , and (1 × 1) _G were also observed on the surface in this temperature range. The original single π -band was restored after heating at ~1200 °C, although an Al signal was still able to be detected. |
| first_indexed | 2024-03-12T15:48:17Z |
| format | Article |
| id | doaj.art-c868e227f76a4bdf8c1acf3250220e0d |
| institution | Directory Open Access Journal |
| issn | 2053-1591 |
| language | English |
| last_indexed | 2024-03-12T15:48:17Z |
| publishDate | 2014-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Materials Research Express |
| spelling | doaj.art-c868e227f76a4bdf8c1acf3250220e0d2023-08-09T15:19:41ZengIOP PublishingMaterials Research Express2053-15912014-01-011101560610.1088/2053-1591/1/1/015606Effects of Al on epitaxial graphene grown on 6H-SiC(0001)C Xia0L I Johansson1A A Zakharov2L Hultman3C Virojanadara4Department of Physics, Chemistry, and Biology (IFM), Linköping University , S-581 83 Linköping, SwedenDepartment of Physics, Chemistry, and Biology (IFM), Linköping University , S-581 83 Linköping, SwedenMAX-lab, Lund University , S-22100 Lund, SwedenDepartment of Physics, Chemistry, and Biology (IFM), Linköping University , S-581 83 Linköping, SwedenDepartment of Physics, Chemistry, and Biology (IFM), Linköping University , S-581 83 Linköping, SwedenAluminum was deposited on epitaxial monolayer-grown graphene on SiC(0001). The effects of annealing up to 1200 °C on the surface and interface morphology, chemical composition, and electron band structure were analyzed in situ by synchrotron-based techniques at the MAX Laboratory. After heating at around 400 °C, Al islands or droplets are observed on the surface and the collected Si 2p, Al 2p, and C 1s core levels spectra indicate Al intercalation at the graphene SiC interface. Also, the original single π -band splits into two, indicating decoupling of the carbon buffer layer and the formation of a quasi-free-standing bilayer-like electronic structure. Further heating at higher temperatures from 700 to 900 °C yields additional chemical reactions. Broader core level spectra are then observed and clear changes in the π -bands near the Dirac point are detected. More electron doping was detected at this stage since one of the π -bands has shifted to about 1.1 eV below the Fermi level. Different ordered phases of (7 × 7), (4 × 4), (1 × 1) _Al , and (1 × 1) _G were also observed on the surface in this temperature range. The original single π -band was restored after heating at ~1200 °C, although an Al signal was still able to be detected.https://doi.org/10.1088/2053-1591/1/1/015606epitaxial grapheneSiCaluminumARPES XPSLEEM XPEEM |
| spellingShingle | C Xia L I Johansson A A Zakharov L Hultman C Virojanadara Effects of Al on epitaxial graphene grown on 6H-SiC(0001) Materials Research Express epitaxial graphene SiC aluminum ARPES XPS LEEM XPEEM |
| title | Effects of Al on epitaxial graphene grown on 6H-SiC(0001) |
| title_full | Effects of Al on epitaxial graphene grown on 6H-SiC(0001) |
| title_fullStr | Effects of Al on epitaxial graphene grown on 6H-SiC(0001) |
| title_full_unstemmed | Effects of Al on epitaxial graphene grown on 6H-SiC(0001) |
| title_short | Effects of Al on epitaxial graphene grown on 6H-SiC(0001) |
| title_sort | effects of al on epitaxial graphene grown on 6h sic 0001 |
| topic | epitaxial graphene SiC aluminum ARPES XPS LEEM XPEEM |
| url | https://doi.org/10.1088/2053-1591/1/1/015606 |
| work_keys_str_mv | AT cxia effectsofalonepitaxialgraphenegrownon6hsic0001 AT lijohansson effectsofalonepitaxialgraphenegrownon6hsic0001 AT aazakharov effectsofalonepitaxialgraphenegrownon6hsic0001 AT lhultman effectsofalonepitaxialgraphenegrownon6hsic0001 AT cvirojanadara effectsofalonepitaxialgraphenegrownon6hsic0001 |