A 4.8-μVrms-Noise CMOS-Microelectrode Array With Density-Scalable Active Readout Pixels via Disaggregated Differential Amplifier Implementation

A 4.8-μVrms-Noise CMOS-Microelectrode Array With Density-Scalable Active Readout Pixels via Disaggregated Differential Amplifier Implementation

We demonstrate a 4.8-μVrms noise microelectrode array (MEA) based on the complementary-metal-oxide-semiconductor active-pixel-sensors readout technique with disaggregated differential amplifier implementation. The circuit elements of the differential amplifier are divided into a readout pixel, a ref...

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Bibliographic Details
Main Authors: Jun Ogi, Yuri Kato, Yusaku Nakashima, Kenji Ikeda, Motoko Jingu, Yoshihisa Matoba, Naohiko Kimizuka, Chigusa Yamane, Masataka Maehara, Takuya Kishimoto, Shigeki Hashimoto, Eriko Matsui, Yusuke Oike
Format: Article
Language:English
Published: Frontiers Media S.A. 2019-03-01
Series:Frontiers in Neuroscience
Subjects:
microelectrode array (MEA)
CMOS integration circuits
readout noise
differential amplifier circuit
neuron action potentials
Online Access:https://www.frontiersin.org/article/10.3389/fnins.2019.00234/full
Description
Summary:We demonstrate a 4.8-μVrms noise microelectrode array (MEA) based on the complementary-metal-oxide-semiconductor active-pixel-sensors readout technique with disaggregated differential amplifier implementation. The circuit elements of the differential amplifier are divided into a readout pixel, a reference pixel, and a column circuit. This disaggregation contributes to the small area of the readout pixel, which is less than 81 μm2. We observed neuron signals around 100 μV with 432 electrodes in a fabricated prototype chip. The implementation has technological feasibility of up to 12-μm-pitch electrode density and 6,912 readout channels for high-spatial resolution mapping of neuron network activity.
ISSN:1662-453X

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