Variable temperature probing of minority carrier transport and optical properties in p-Ga2O3
Electron beam-induced current in the temperature range from 304 to 404 K was employed to measure the minority carrier diffusion length in metal–organic chemical vapor deposition-grown p-Ga2O3 thin films with two different concentrations of majority carriers. The diffusion length of electrons exhibit...
| Main Authors: | , , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2022-03-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0086449 |
| _version_ | 1819010387191791616 |
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| author | Sushrut Modak Leonid Chernyak Alfons Schulte Corinne Sartel Vincent Sallet Yves Dumont Ekaterine Chikoidze Xinyi Xia Fan Ren Stephen J. Pearton Arie Ruzin Denis M. Zhigunov Sergey S. Kosolobov Vladimir P. Drachev |
| author_facet | Sushrut Modak Leonid Chernyak Alfons Schulte Corinne Sartel Vincent Sallet Yves Dumont Ekaterine Chikoidze Xinyi Xia Fan Ren Stephen J. Pearton Arie Ruzin Denis M. Zhigunov Sergey S. Kosolobov Vladimir P. Drachev |
| author_sort | Sushrut Modak |
| collection | DOAJ |
| description | Electron beam-induced current in the temperature range from 304 to 404 K was employed to measure the minority carrier diffusion length in metal–organic chemical vapor deposition-grown p-Ga2O3 thin films with two different concentrations of majority carriers. The diffusion length of electrons exhibited a decrease with increasing temperature. In addition, the cathodoluminescence emission spectrum identified optical signatures of the acceptor levels associated with the VGa−–VO++ complex. The activation energies for the diffusion length decrease and quenching of cathodoluminescence emission with increasing temperature were ascribed to the thermal de-trapping of electrons from VGa−–VO++ defect complexes. |
| first_indexed | 2024-12-21T01:11:27Z |
| format | Article |
| id | doaj.art-c88b3942d59d484ca38ad4ff9f21d423 |
| institution | Directory Open Access Journal |
| issn | 2166-532X |
| language | English |
| last_indexed | 2024-12-21T01:11:27Z |
| publishDate | 2022-03-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | APL Materials |
| spelling | doaj.art-c88b3942d59d484ca38ad4ff9f21d4232022-12-21T19:20:54ZengAIP Publishing LLCAPL Materials2166-532X2022-03-01103031106031106-610.1063/5.0086449Variable temperature probing of minority carrier transport and optical properties in p-Ga2O3Sushrut Modak0Leonid Chernyak1Alfons Schulte2Corinne Sartel3Vincent Sallet4Yves Dumont5Ekaterine Chikoidze6Xinyi Xia7Fan Ren8Stephen J. Pearton9Arie Ruzin10Denis M. Zhigunov11Sergey S. Kosolobov12Vladimir P. Drachev13Department of Physics, University of Central Florida, Orlando, Florida 32816, USADepartment of Physics, University of Central Florida, Orlando, Florida 32816, USADepartment of Physics, University of Central Florida, Orlando, Florida 32816, USAGroupe d’Etude de la Matière Condensée, Université Paris-Saclay, Université de Versailles Saint Quentin en Yvelines–CNRS, 45 Av. des Etats-Unis, 78035 Versailles Cedex, FranceGroupe d’Etude de la Matière Condensée, Université Paris-Saclay, Université de Versailles Saint Quentin en Yvelines–CNRS, 45 Av. des Etats-Unis, 78035 Versailles Cedex, FranceGroupe d’Etude de la Matière Condensée, Université Paris-Saclay, Université de Versailles Saint Quentin en Yvelines–CNRS, 45 Av. des Etats-Unis, 78035 Versailles Cedex, FranceGroupe d’Etude de la Matière Condensée, Université Paris-Saclay, Université de Versailles Saint Quentin en Yvelines–CNRS, 45 Av. des Etats-Unis, 78035 Versailles Cedex, FranceDepartment of Chemical Engineering, University of Florida, Gainesville, Florida 32611, USADepartment of Chemical Engineering, University of Florida, Gainesville, Florida 32611, USAMaterial Science and Engineering, University of Florida, Gainesville, Florida 32611, USASchool of Electrical Engineering, Tel Aviv University, Tel Aviv 69978, IsraelCenter for Engineering Physics, Skolkovo Institute Science and Technology, Nobel St., Bldg. 1, Moscow 121205, RussiaCenter for Engineering Physics, Skolkovo Institute Science and Technology, Nobel St., Bldg. 1, Moscow 121205, RussiaCenter for Engineering Physics, Skolkovo Institute Science and Technology, Nobel St., Bldg. 1, Moscow 121205, RussiaElectron beam-induced current in the temperature range from 304 to 404 K was employed to measure the minority carrier diffusion length in metal–organic chemical vapor deposition-grown p-Ga2O3 thin films with two different concentrations of majority carriers. The diffusion length of electrons exhibited a decrease with increasing temperature. In addition, the cathodoluminescence emission spectrum identified optical signatures of the acceptor levels associated with the VGa−–VO++ complex. The activation energies for the diffusion length decrease and quenching of cathodoluminescence emission with increasing temperature were ascribed to the thermal de-trapping of electrons from VGa−–VO++ defect complexes.http://dx.doi.org/10.1063/5.0086449 |
| spellingShingle | Sushrut Modak Leonid Chernyak Alfons Schulte Corinne Sartel Vincent Sallet Yves Dumont Ekaterine Chikoidze Xinyi Xia Fan Ren Stephen J. Pearton Arie Ruzin Denis M. Zhigunov Sergey S. Kosolobov Vladimir P. Drachev Variable temperature probing of minority carrier transport and optical properties in p-Ga2O3 APL Materials |
| title | Variable temperature probing of minority carrier transport and optical properties in p-Ga2O3 |
| title_full | Variable temperature probing of minority carrier transport and optical properties in p-Ga2O3 |
| title_fullStr | Variable temperature probing of minority carrier transport and optical properties in p-Ga2O3 |
| title_full_unstemmed | Variable temperature probing of minority carrier transport and optical properties in p-Ga2O3 |
| title_short | Variable temperature probing of minority carrier transport and optical properties in p-Ga2O3 |
| title_sort | variable temperature probing of minority carrier transport and optical properties in p ga2o3 |
| url | http://dx.doi.org/10.1063/5.0086449 |
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