Digital Etch Technique for Forming Ultra-Scaled Germanium-Tin (Ge 1−x Sn x ) Fin Structure
Abstract We developed a new digital etch process that allows precise etching of Germanium or Germanium-tin (Ge1−x Sn x ) materials. The digital etch approach consists of Ge1−x Sn x oxide formation by plasma oxidation and oxide removal in diluted hydrochloric acid at room temperature. The first step...
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2017-05-01
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| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-017-01449-1 |
| _version_ | 1818429536308559872 |
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| author | Wei Wang Dian Lei Yuan Dong Xiao Gong Eng Soon Tok Yee-Chia Yeo |
| author_facet | Wei Wang Dian Lei Yuan Dong Xiao Gong Eng Soon Tok Yee-Chia Yeo |
| author_sort | Wei Wang |
| collection | DOAJ |
| description | Abstract We developed a new digital etch process that allows precise etching of Germanium or Germanium-tin (Ge1−x Sn x ) materials. The digital etch approach consists of Ge1−x Sn x oxide formation by plasma oxidation and oxide removal in diluted hydrochloric acid at room temperature. The first step is a self-limiting process, as the thickness of oxide layer grows logarithmically with the oxidation time and saturates fast. Consistent etch rates in each cycle were found on the Ge1−x Sn x samples, with the surfaces remaining smooth after etch. The digital etch process parameters were tuned to achieve various etch rates. By reducing the radio frequency power to 70 W, etch rate of sub-1.2 nm was obtained on a Ge0.875Sn0.125 sample. The digital etch process was employed to fabricate the Ge1−x Sn x fin structures. Extremely scaled Ge0.95Sn0.05 fins with 5 nm fin width were realized. The side walls of the Ge0.95Sn0.05 fins are smooth, and no crystal damage can be observed. This technique provides an option to realize aggressively scaled nanostructure devices based on Ge1−x Sn x materials with high-precision control. |
| first_indexed | 2024-12-14T15:19:04Z |
| format | Article |
| id | doaj.art-c890dc39b6ee446f9ae6b0f5ddd28403 |
| institution | Directory Open Access Journal |
| issn | 2045-2322 |
| language | English |
| last_indexed | 2024-12-14T15:19:04Z |
| publishDate | 2017-05-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Scientific Reports |
| spelling | doaj.art-c890dc39b6ee446f9ae6b0f5ddd284032022-12-21T22:56:14ZengNature PortfolioScientific Reports2045-23222017-05-01711910.1038/s41598-017-01449-1Digital Etch Technique for Forming Ultra-Scaled Germanium-Tin (Ge 1−x Sn x ) Fin StructureWei Wang0Dian Lei1Yuan Dong2Xiao Gong3Eng Soon Tok4Yee-Chia Yeo5Department of Electrical and Computer Engineering, National University of SingaporeDepartment of Electrical and Computer Engineering, National University of SingaporeDepartment of Electrical and Computer Engineering, National University of SingaporeDepartment of Electrical and Computer Engineering, National University of SingaporeDepartment of Physics, National University of SingaporeDepartment of Electrical and Computer Engineering, National University of SingaporeAbstract We developed a new digital etch process that allows precise etching of Germanium or Germanium-tin (Ge1−x Sn x ) materials. The digital etch approach consists of Ge1−x Sn x oxide formation by plasma oxidation and oxide removal in diluted hydrochloric acid at room temperature. The first step is a self-limiting process, as the thickness of oxide layer grows logarithmically with the oxidation time and saturates fast. Consistent etch rates in each cycle were found on the Ge1−x Sn x samples, with the surfaces remaining smooth after etch. The digital etch process parameters were tuned to achieve various etch rates. By reducing the radio frequency power to 70 W, etch rate of sub-1.2 nm was obtained on a Ge0.875Sn0.125 sample. The digital etch process was employed to fabricate the Ge1−x Sn x fin structures. Extremely scaled Ge0.95Sn0.05 fins with 5 nm fin width were realized. The side walls of the Ge0.95Sn0.05 fins are smooth, and no crystal damage can be observed. This technique provides an option to realize aggressively scaled nanostructure devices based on Ge1−x Sn x materials with high-precision control.https://doi.org/10.1038/s41598-017-01449-1 |
| spellingShingle | Wei Wang Dian Lei Yuan Dong Xiao Gong Eng Soon Tok Yee-Chia Yeo Digital Etch Technique for Forming Ultra-Scaled Germanium-Tin (Ge 1−x Sn x ) Fin Structure Scientific Reports |
| title | Digital Etch Technique for Forming Ultra-Scaled Germanium-Tin (Ge 1−x Sn x ) Fin Structure |
| title_full | Digital Etch Technique for Forming Ultra-Scaled Germanium-Tin (Ge 1−x Sn x ) Fin Structure |
| title_fullStr | Digital Etch Technique for Forming Ultra-Scaled Germanium-Tin (Ge 1−x Sn x ) Fin Structure |
| title_full_unstemmed | Digital Etch Technique for Forming Ultra-Scaled Germanium-Tin (Ge 1−x Sn x ) Fin Structure |
| title_short | Digital Etch Technique for Forming Ultra-Scaled Germanium-Tin (Ge 1−x Sn x ) Fin Structure |
| title_sort | digital etch technique for forming ultra scaled germanium tin ge 1 x sn x fin structure |
| url | https://doi.org/10.1038/s41598-017-01449-1 |
| work_keys_str_mv | AT weiwang digitaletchtechniqueforformingultrascaledgermaniumtinge1xsnxfinstructure AT dianlei digitaletchtechniqueforformingultrascaledgermaniumtinge1xsnxfinstructure AT yuandong digitaletchtechniqueforformingultrascaledgermaniumtinge1xsnxfinstructure AT xiaogong digitaletchtechniqueforformingultrascaledgermaniumtinge1xsnxfinstructure AT engsoontok digitaletchtechniqueforformingultrascaledgermaniumtinge1xsnxfinstructure AT yeechiayeo digitaletchtechniqueforformingultrascaledgermaniumtinge1xsnxfinstructure |