| Summary: | Intraconduction subband related optical absorption coefficient in non-polar m-plane symmetric linked (In,Ga)N/GaN double parabolic quantum wells is theoretically investigated in this study taking into consideration the presence of a single dopant hydrogen-like donor impurity moving down the growth axis. Calculations for a finite parabolic potential are performed using the impurity position, structural dimension, indium fraction, and temperature as adjusting variables. Using the finite difference approach, the Schrodinger equation is numerically solved to obtain the eigenvalues and their corresponding eigenvectors in the effective-mass approximation. The results reveal that increasing the coupling barrier and/or well concentration causes a considerable blueshift in the position of the absorption peak. Temperature, size change, and/or an impurity moving from the left band edge to the middle of the structure all cause a significant redshift in the absorption spectra. It has also been established that resonant optical absorption characteristics can be controlled by a careful choice of temperature and structure size, opening up new possibilities for high-performance infrared optical devices, optical modulators, solar cells, and laser applications.
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