Design of Strain-Engineered GeSn/GeSiSn Quantum Dots for Mid-IR Direct Bandgap Emission on Si Substrate
Abstract Strain-engineered self-assembled GeSn/GeSiSn quantum dots in Ge matrix have been numerically investigated aiming to study their potentiality towards direct bandgap emission in the mid-IR range. The use of GeSiSn alloy as surrounding media for GeSn quantum dots (QD) allows adjusting the stra...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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SpringerOpen
2018-06-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | http://link.springer.com/article/10.1186/s11671-018-2587-1 |
| _version_ | 1797721153347780608 |
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| author | Reem Al-Saigh Mourad Baira Bassem Salem Bouraoui Ilahi |
| author_facet | Reem Al-Saigh Mourad Baira Bassem Salem Bouraoui Ilahi |
| author_sort | Reem Al-Saigh |
| collection | DOAJ |
| description | Abstract Strain-engineered self-assembled GeSn/GeSiSn quantum dots in Ge matrix have been numerically investigated aiming to study their potentiality towards direct bandgap emission in the mid-IR range. The use of GeSiSn alloy as surrounding media for GeSn quantum dots (QD) allows adjusting the strain around the QD through the variation of Si and/or Sn composition. Accordingly, the lattice mismatch between the GeSn quantum dots and the GeSiSn surrounding layer has been tuned between − 2.3 and − 4.5% through the variation of the Sn barrier composition for different dome-shaped QD sizes. The obtained results show that the emission wavelength, fulfilling the specific QD directness criteria, can be successively tuned over a broad mid-IR range from 3 up to7 μm opening new perspectives for group IV laser sources fully integrated in Si photonic systems for sensing applications. |
| first_indexed | 2024-03-12T09:29:34Z |
| format | Article |
| id | doaj.art-c8b42e5b76374c92946dc1344b130a68 |
| institution | Directory Open Access Journal |
| issn | 1931-7573 1556-276X |
| language | English |
| last_indexed | 2024-03-12T09:29:34Z |
| publishDate | 2018-06-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-c8b42e5b76374c92946dc1344b130a682023-09-02T13:58:03ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2018-06-011311510.1186/s11671-018-2587-1Design of Strain-Engineered GeSn/GeSiSn Quantum Dots for Mid-IR Direct Bandgap Emission on Si SubstrateReem Al-Saigh0Mourad Baira1Bassem Salem2Bouraoui Ilahi3King Saud University Department of Physics and Astronomy, College of SciencesUniversity of Monastir Faculty of Sciences, Laboratory of Micro-Optoelectronic and NanostructuresUniv. de Grenoble Alpes, CNRS, CEA/LETI Minatec, LTMKing Saud University Department of Physics and Astronomy, College of SciencesAbstract Strain-engineered self-assembled GeSn/GeSiSn quantum dots in Ge matrix have been numerically investigated aiming to study their potentiality towards direct bandgap emission in the mid-IR range. The use of GeSiSn alloy as surrounding media for GeSn quantum dots (QD) allows adjusting the strain around the QD through the variation of Si and/or Sn composition. Accordingly, the lattice mismatch between the GeSn quantum dots and the GeSiSn surrounding layer has been tuned between − 2.3 and − 4.5% through the variation of the Sn barrier composition for different dome-shaped QD sizes. The obtained results show that the emission wavelength, fulfilling the specific QD directness criteria, can be successively tuned over a broad mid-IR range from 3 up to7 μm opening new perspectives for group IV laser sources fully integrated in Si photonic systems for sensing applications.http://link.springer.com/article/10.1186/s11671-018-2587-1GeSnGeSiSnQuantum dotsDirect bandgapMid-IR |
| spellingShingle | Reem Al-Saigh Mourad Baira Bassem Salem Bouraoui Ilahi Design of Strain-Engineered GeSn/GeSiSn Quantum Dots for Mid-IR Direct Bandgap Emission on Si Substrate Nanoscale Research Letters GeSn GeSiSn Quantum dots Direct bandgap Mid-IR |
| title | Design of Strain-Engineered GeSn/GeSiSn Quantum Dots for Mid-IR Direct Bandgap Emission on Si Substrate |
| title_full | Design of Strain-Engineered GeSn/GeSiSn Quantum Dots for Mid-IR Direct Bandgap Emission on Si Substrate |
| title_fullStr | Design of Strain-Engineered GeSn/GeSiSn Quantum Dots for Mid-IR Direct Bandgap Emission on Si Substrate |
| title_full_unstemmed | Design of Strain-Engineered GeSn/GeSiSn Quantum Dots for Mid-IR Direct Bandgap Emission on Si Substrate |
| title_short | Design of Strain-Engineered GeSn/GeSiSn Quantum Dots for Mid-IR Direct Bandgap Emission on Si Substrate |
| title_sort | design of strain engineered gesn gesisn quantum dots for mid ir direct bandgap emission on si substrate |
| topic | GeSn GeSiSn Quantum dots Direct bandgap Mid-IR |
| url | http://link.springer.com/article/10.1186/s11671-018-2587-1 |
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