Effects of UV Irradiation and Storage on the Performance of Inverted Red Quantum-Dot Light-Emitting Diodes
We report the effects of ultraviolet (UV) irradiation and storage on the performance of ZnO-based inverted quantum-dot light-emitting diodes (QLEDs). The effects of UV irradiation on the electrical properties of ZnO nanoparticles (NPs) were investigated. We demonstrate that the charge balance was en...
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| Format: | Article |
| Language: | English |
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MDPI AG
2021-06-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/11/6/1606 |
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| author | Yu Luo Junjie Wang Pu Wang Chaohuang Mai Jian Wang Boon Kar Yap Junbiao Peng |
| author_facet | Yu Luo Junjie Wang Pu Wang Chaohuang Mai Jian Wang Boon Kar Yap Junbiao Peng |
| author_sort | Yu Luo |
| collection | DOAJ |
| description | We report the effects of ultraviolet (UV) irradiation and storage on the performance of ZnO-based inverted quantum-dot light-emitting diodes (QLEDs). The effects of UV irradiation on the electrical properties of ZnO nanoparticles (NPs) were investigated. We demonstrate that the charge balance was enhanced by improving the electron injection. The maximum external quantum efficiency (EQE) and power efficiency (PE) of QLEDs were increased by 26% and 143% after UV irradiation for 15 min. In addition, we investigated the storage stabilities of the inverted QLEDs. During the storage period, the electron current from ZnO gradually decreased, causing a reduction in the device current. However, the QLEDs demonstrated improvements in maximum EQE by 20.7% after two days of storage. Our analysis indicates that the suppression of exciton quenching at the interface of ZnO and quantum dots (QDs) during the storage period could result in the enhancement of EQE. This study provides a comprehension of the generally neglected factors, which could be conducive to the realization of high-efficiency and highly storage-stable practical applications. |
| first_indexed | 2024-03-10T10:16:55Z |
| format | Article |
| id | doaj.art-c8b8e5b9abb14237b071d00a656b1db8 |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-10T10:16:55Z |
| publishDate | 2021-06-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-c8b8e5b9abb14237b071d00a656b1db82023-11-22T00:45:33ZengMDPI AGNanomaterials2079-49912021-06-01116160610.3390/nano11061606Effects of UV Irradiation and Storage on the Performance of Inverted Red Quantum-Dot Light-Emitting DiodesYu Luo0Junjie Wang1Pu Wang2Chaohuang Mai3Jian Wang4Boon Kar Yap5Junbiao Peng6State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, ChinaState Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, ChinaSchool of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin 541000, ChinaState Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, ChinaState Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, ChinaThe International School of Advanced Materials, School of Material Science and Engineering, South China University of Technology, Guangzhou 510640, ChinaState Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, ChinaWe report the effects of ultraviolet (UV) irradiation and storage on the performance of ZnO-based inverted quantum-dot light-emitting diodes (QLEDs). The effects of UV irradiation on the electrical properties of ZnO nanoparticles (NPs) were investigated. We demonstrate that the charge balance was enhanced by improving the electron injection. The maximum external quantum efficiency (EQE) and power efficiency (PE) of QLEDs were increased by 26% and 143% after UV irradiation for 15 min. In addition, we investigated the storage stabilities of the inverted QLEDs. During the storage period, the electron current from ZnO gradually decreased, causing a reduction in the device current. However, the QLEDs demonstrated improvements in maximum EQE by 20.7% after two days of storage. Our analysis indicates that the suppression of exciton quenching at the interface of ZnO and quantum dots (QDs) during the storage period could result in the enhancement of EQE. This study provides a comprehension of the generally neglected factors, which could be conducive to the realization of high-efficiency and highly storage-stable practical applications.https://www.mdpi.com/2079-4991/11/6/1606quantum-dotinverted QLEDsUV irradiationstorage |
| spellingShingle | Yu Luo Junjie Wang Pu Wang Chaohuang Mai Jian Wang Boon Kar Yap Junbiao Peng Effects of UV Irradiation and Storage on the Performance of Inverted Red Quantum-Dot Light-Emitting Diodes Nanomaterials quantum-dot inverted QLEDs UV irradiation storage |
| title | Effects of UV Irradiation and Storage on the Performance of Inverted Red Quantum-Dot Light-Emitting Diodes |
| title_full | Effects of UV Irradiation and Storage on the Performance of Inverted Red Quantum-Dot Light-Emitting Diodes |
| title_fullStr | Effects of UV Irradiation and Storage on the Performance of Inverted Red Quantum-Dot Light-Emitting Diodes |
| title_full_unstemmed | Effects of UV Irradiation and Storage on the Performance of Inverted Red Quantum-Dot Light-Emitting Diodes |
| title_short | Effects of UV Irradiation and Storage on the Performance of Inverted Red Quantum-Dot Light-Emitting Diodes |
| title_sort | effects of uv irradiation and storage on the performance of inverted red quantum dot light emitting diodes |
| topic | quantum-dot inverted QLEDs UV irradiation storage |
| url | https://www.mdpi.com/2079-4991/11/6/1606 |
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