Nanoscale triboelectrification gated transistor
Though tribotronics, e.g., semiconductor electronics that utilize triboelectricity, is a promising technology, current devices have limited application in micro/nano electronics. Here, the authors report a triboelectrification-gated transistor with triboelectric modulation at the nanoscale.
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2020-02-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-020-14909-6 |
| _version_ | 1818957119914770432 |
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| author | Tianzhao Bu Liang Xu Zhiwei Yang Xiang Yang Guoxu Liu Yuanzhi Cao Chi Zhang Zhong Lin Wang |
| author_facet | Tianzhao Bu Liang Xu Zhiwei Yang Xiang Yang Guoxu Liu Yuanzhi Cao Chi Zhang Zhong Lin Wang |
| author_sort | Tianzhao Bu |
| collection | DOAJ |
| description | Though tribotronics, e.g., semiconductor electronics that utilize triboelectricity, is a promising technology, current devices have limited application in micro/nano electronics. Here, the authors report a triboelectrification-gated transistor with triboelectric modulation at the nanoscale. |
| first_indexed | 2024-12-20T11:04:47Z |
| format | Article |
| id | doaj.art-c8cb632797204db1a8c8dad81da577f5 |
| institution | Directory Open Access Journal |
| issn | 2041-1723 |
| language | English |
| last_indexed | 2024-12-20T11:04:47Z |
| publishDate | 2020-02-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Nature Communications |
| spelling | doaj.art-c8cb632797204db1a8c8dad81da577f52022-12-21T19:42:54ZengNature PortfolioNature Communications2041-17232020-02-011111810.1038/s41467-020-14909-6Nanoscale triboelectrification gated transistorTianzhao Bu0Liang Xu1Zhiwei Yang2Xiang Yang3Guoxu Liu4Yuanzhi Cao5Chi Zhang6Zhong Lin Wang7CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of SciencesCAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of SciencesCAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of SciencesInstitute of Semiconductors, Chinese Academy of SciencesCAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of SciencesCAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of SciencesCAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of SciencesCAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of SciencesThough tribotronics, e.g., semiconductor electronics that utilize triboelectricity, is a promising technology, current devices have limited application in micro/nano electronics. Here, the authors report a triboelectrification-gated transistor with triboelectric modulation at the nanoscale.https://doi.org/10.1038/s41467-020-14909-6 |
| spellingShingle | Tianzhao Bu Liang Xu Zhiwei Yang Xiang Yang Guoxu Liu Yuanzhi Cao Chi Zhang Zhong Lin Wang Nanoscale triboelectrification gated transistor Nature Communications |
| title | Nanoscale triboelectrification gated transistor |
| title_full | Nanoscale triboelectrification gated transistor |
| title_fullStr | Nanoscale triboelectrification gated transistor |
| title_full_unstemmed | Nanoscale triboelectrification gated transistor |
| title_short | Nanoscale triboelectrification gated transistor |
| title_sort | nanoscale triboelectrification gated transistor |
| url | https://doi.org/10.1038/s41467-020-14909-6 |
| work_keys_str_mv | AT tianzhaobu nanoscaletriboelectrificationgatedtransistor AT liangxu nanoscaletriboelectrificationgatedtransistor AT zhiweiyang nanoscaletriboelectrificationgatedtransistor AT xiangyang nanoscaletriboelectrificationgatedtransistor AT guoxuliu nanoscaletriboelectrificationgatedtransistor AT yuanzhicao nanoscaletriboelectrificationgatedtransistor AT chizhang nanoscaletriboelectrificationgatedtransistor AT zhonglinwang nanoscaletriboelectrificationgatedtransistor |