Highly Efficient All-Solution-Processed Quantum Dot Light-Emitting Diodes Using MoO<sub>x</sub> Nanoparticle Hole Injection Layer
This paper presents a study that aims to enhance the performance of quantum dot light-emitting didoes (QLEDs) by employing a solution-processed molybdenum oxide (MoO<sub>x</sub>) nanoparticle (NP) as a hole injection layer (HIL). The study investigates the impact of varying the concentra...
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MDPI AG
2023-08-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/13/16/2324 |
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| author | Ji-Hun Yang Gyeong-Pil Jang Su-Young Kim Young-Bin Chae Kyoung-Ho Lee Dae-Gyu Moon Chang-Kyo Kim |
| author_facet | Ji-Hun Yang Gyeong-Pil Jang Su-Young Kim Young-Bin Chae Kyoung-Ho Lee Dae-Gyu Moon Chang-Kyo Kim |
| author_sort | Ji-Hun Yang |
| collection | DOAJ |
| description | This paper presents a study that aims to enhance the performance of quantum dot light-emitting didoes (QLEDs) by employing a solution-processed molybdenum oxide (MoO<sub>x</sub>) nanoparticle (NP) as a hole injection layer (HIL). The study investigates the impact of varying the concentrations of the MoO<sub>x</sub> NP layer on device characteristics and delves into the underlying mechanisms that contribute to the observed enhancements. Experimental techniques such as an X-ray diffraction and field-emission transmission electron microscopy were employed to confirm the formation of MoO<sub>x</sub> NPs during the synthesis process. Ultraviolet photoelectron spectroscopy was employed to analyze the electron structure of the QLEDs. Remarkable enhancements in device performance were achieved for the QLED by employing an 8 mg/mL concentration of MoO<sub>x</sub> nanoparticles. This configuration attains a maximum luminance of 69,240.7 cd/cm<sup>2</sup>, a maximum current efficiency of 56.0 cd/A, and a maximum external quantum efficiency (EQE) of 13.2%. The obtained results signify notable progress in comparison to those for QLED without HIL, and studies that utilize the widely used poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) HIL. They exhibit a remarkable enhancements of 59.5% and 26.4% in maximum current efficiency, respectively, as well as significant improvements of 42.7% and 20.0% in maximum EQE, respectively. This study opens up new possibilities for the selection of HIL and the fabrication of solution-processed QLEDs, contributing to the potential commercialization of these devices in the future. |
| first_indexed | 2024-03-10T23:41:55Z |
| format | Article |
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| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-10T23:41:55Z |
| publishDate | 2023-08-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-c8d6e04c982d4fa396e106449297c2a92023-11-19T02:27:22ZengMDPI AGNanomaterials2079-49912023-08-011316232410.3390/nano13162324Highly Efficient All-Solution-Processed Quantum Dot Light-Emitting Diodes Using MoO<sub>x</sub> Nanoparticle Hole Injection LayerJi-Hun Yang0Gyeong-Pil Jang1Su-Young Kim2Young-Bin Chae3Kyoung-Ho Lee4Dae-Gyu Moon5Chang-Kyo Kim6Department of Electronic Materials, Devices and Equipment Engineering, Soonchunhyang University, Asan 31538, Chungnam, Republic of KoreaDepartment of Electronic Materials, Devices and Equipment Engineering, Soonchunhyang University, Asan 31538, Chungnam, Republic of KoreaDepartment of Electronic Materials, Devices and Equipment Engineering, Soonchunhyang University, Asan 31538, Chungnam, Republic of KoreaDepartment of Electronic Materials, Devices and Equipment Engineering, Soonchunhyang University, Asan 31538, Chungnam, Republic of KoreaDepartment of Electronic Materials, Devices and Equipment Engineering, Soonchunhyang University, Asan 31538, Chungnam, Republic of KoreaDepartment of Electronic Materials, Devices and Equipment Engineering, Soonchunhyang University, Asan 31538, Chungnam, Republic of KoreaDepartment of Electronic Materials, Devices and Equipment Engineering, Soonchunhyang University, Asan 31538, Chungnam, Republic of KoreaThis paper presents a study that aims to enhance the performance of quantum dot light-emitting didoes (QLEDs) by employing a solution-processed molybdenum oxide (MoO<sub>x</sub>) nanoparticle (NP) as a hole injection layer (HIL). The study investigates the impact of varying the concentrations of the MoO<sub>x</sub> NP layer on device characteristics and delves into the underlying mechanisms that contribute to the observed enhancements. Experimental techniques such as an X-ray diffraction and field-emission transmission electron microscopy were employed to confirm the formation of MoO<sub>x</sub> NPs during the synthesis process. Ultraviolet photoelectron spectroscopy was employed to analyze the electron structure of the QLEDs. Remarkable enhancements in device performance were achieved for the QLED by employing an 8 mg/mL concentration of MoO<sub>x</sub> nanoparticles. This configuration attains a maximum luminance of 69,240.7 cd/cm<sup>2</sup>, a maximum current efficiency of 56.0 cd/A, and a maximum external quantum efficiency (EQE) of 13.2%. The obtained results signify notable progress in comparison to those for QLED without HIL, and studies that utilize the widely used poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) HIL. They exhibit a remarkable enhancements of 59.5% and 26.4% in maximum current efficiency, respectively, as well as significant improvements of 42.7% and 20.0% in maximum EQE, respectively. This study opens up new possibilities for the selection of HIL and the fabrication of solution-processed QLEDs, contributing to the potential commercialization of these devices in the future.https://www.mdpi.com/2079-4991/13/16/2324quantum dot light-emitting diodesolution processMoO<sub>3</sub> nanoparticleshole injection layercharge balance |
| spellingShingle | Ji-Hun Yang Gyeong-Pil Jang Su-Young Kim Young-Bin Chae Kyoung-Ho Lee Dae-Gyu Moon Chang-Kyo Kim Highly Efficient All-Solution-Processed Quantum Dot Light-Emitting Diodes Using MoO<sub>x</sub> Nanoparticle Hole Injection Layer Nanomaterials quantum dot light-emitting diode solution process MoO<sub>3</sub> nanoparticles hole injection layer charge balance |
| title | Highly Efficient All-Solution-Processed Quantum Dot Light-Emitting Diodes Using MoO<sub>x</sub> Nanoparticle Hole Injection Layer |
| title_full | Highly Efficient All-Solution-Processed Quantum Dot Light-Emitting Diodes Using MoO<sub>x</sub> Nanoparticle Hole Injection Layer |
| title_fullStr | Highly Efficient All-Solution-Processed Quantum Dot Light-Emitting Diodes Using MoO<sub>x</sub> Nanoparticle Hole Injection Layer |
| title_full_unstemmed | Highly Efficient All-Solution-Processed Quantum Dot Light-Emitting Diodes Using MoO<sub>x</sub> Nanoparticle Hole Injection Layer |
| title_short | Highly Efficient All-Solution-Processed Quantum Dot Light-Emitting Diodes Using MoO<sub>x</sub> Nanoparticle Hole Injection Layer |
| title_sort | highly efficient all solution processed quantum dot light emitting diodes using moo sub x sub nanoparticle hole injection layer |
| topic | quantum dot light-emitting diode solution process MoO<sub>3</sub> nanoparticles hole injection layer charge balance |
| url | https://www.mdpi.com/2079-4991/13/16/2324 |
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