Separate evaluation of interface and oxide hole traps in SiO2/GaN MOS structures with below- and above-gap light excitation

Separate evaluation of interface and oxide hole traps in SiO2/GaN MOS structures with below- and above-gap light excitation

Understanding the traps in metal-oxide-semiconductor (MOS) structures is crucial in the fabrication of MOS transistors with high performance and reliability. In this study, we evaluated the hole traps in SiO _2 /GaN MOS structures through photo-assisted capacitance-voltage measurements. Below- and a...

Full description

Bibliographic Details
Main Authors: Takuma Kobayashi, Kazuki Tomigahara, Mikito Nozaki, Takayoshi Shimura, Heiji Watanabe
Format: Article
Language:English
Published: IOP Publishing 2023-01-01
Series:Applied Physics Express
Subjects:
gallium nitride
silicon dioxide
metal-oxide-semiconductor devices
interface
hole traps
Online Access:https://doi.org/10.35848/1882-0786/ad120a

Internet

https://doi.org/10.35848/1882-0786/ad120a

Similar Items