A Low-Cost Synthetic Route of FAPbI<sub>3</sub> Quantum Dots in Air at Atmospheric Pressure: The Role of Zinc Iodide Additives

Perovskite quantum dots (PQDs) have shown great promise in optoelectronic device applications. Typically, a traditional hot-injection method with heating and high vacuum pressure is used to synthesize these colloidal nanoparticles. In this article, we report a low-cost synthetic method for FAPbI<...

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Bibliographic Details
Main Authors: Shuo Wang, Simiao Li, Qian Zhao
Format: Article
Language:English
Published: MDPI AG 2023-01-01
Series:Nanomaterials
Subjects:
Online Access:https://www.mdpi.com/2079-4991/13/2/226
Description
Summary:Perovskite quantum dots (PQDs) have shown great promise in optoelectronic device applications. Typically, a traditional hot-injection method with heating and high vacuum pressure is used to synthesize these colloidal nanoparticles. In this article, we report a low-cost synthetic method for FAPbI<sub>3</sub> PQDs in air at atmospheric pressure with the assistance of ZnI<sub>2</sub>. Compared with the FAPbI<sub>3</sub> PQDs synthesized under vacuum/N<sub>2</sub> condition, the air-synthesized Zn:FAPbI<sub>3</sub> PQDs exhibit the same crystalline structure with a similar preferential crystallographic orientation but demonstrate higher colloidal stability and higher production yield. Furthermore, we examine the influence of ZnI<sub>2</sub> during the synthesis process on morphologies and optoelectronic properties. The results show that the mean size of the obtained FAPbI<sub>3</sub> PQDs is decreased by increasing the amount of added ZnI<sub>2</sub>. More importantly, introducing an optimal amount of ZnI<sub>2</sub> into the Pb source precursor enables increasing the carrier lifetime of FAPbI<sub>3</sub> PQDs, showing the potential beneficial effect on device performance.
ISSN:2079-4991