A Low-Cost Synthetic Route of FAPbI<sub>3</sub> Quantum Dots in Air at Atmospheric Pressure: The Role of Zinc Iodide Additives
Perovskite quantum dots (PQDs) have shown great promise in optoelectronic device applications. Typically, a traditional hot-injection method with heating and high vacuum pressure is used to synthesize these colloidal nanoparticles. In this article, we report a low-cost synthetic method for FAPbI<...
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MDPI AG
2023-01-01
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Online Access: | https://www.mdpi.com/2079-4991/13/2/226 |
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author | Shuo Wang Simiao Li Qian Zhao |
author_facet | Shuo Wang Simiao Li Qian Zhao |
author_sort | Shuo Wang |
collection | DOAJ |
description | Perovskite quantum dots (PQDs) have shown great promise in optoelectronic device applications. Typically, a traditional hot-injection method with heating and high vacuum pressure is used to synthesize these colloidal nanoparticles. In this article, we report a low-cost synthetic method for FAPbI<sub>3</sub> PQDs in air at atmospheric pressure with the assistance of ZnI<sub>2</sub>. Compared with the FAPbI<sub>3</sub> PQDs synthesized under vacuum/N<sub>2</sub> condition, the air-synthesized Zn:FAPbI<sub>3</sub> PQDs exhibit the same crystalline structure with a similar preferential crystallographic orientation but demonstrate higher colloidal stability and higher production yield. Furthermore, we examine the influence of ZnI<sub>2</sub> during the synthesis process on morphologies and optoelectronic properties. The results show that the mean size of the obtained FAPbI<sub>3</sub> PQDs is decreased by increasing the amount of added ZnI<sub>2</sub>. More importantly, introducing an optimal amount of ZnI<sub>2</sub> into the Pb source precursor enables increasing the carrier lifetime of FAPbI<sub>3</sub> PQDs, showing the potential beneficial effect on device performance. |
first_indexed | 2024-03-09T11:33:52Z |
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institution | Directory Open Access Journal |
issn | 2079-4991 |
language | English |
last_indexed | 2024-03-09T11:33:52Z |
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series | Nanomaterials |
spelling | doaj.art-c9239143aed94454b5a2b6682059f42a2023-11-30T23:46:54ZengMDPI AGNanomaterials2079-49912023-01-0113222610.3390/nano13020226A Low-Cost Synthetic Route of FAPbI<sub>3</sub> Quantum Dots in Air at Atmospheric Pressure: The Role of Zinc Iodide AdditivesShuo Wang0Simiao Li1Qian Zhao2School of Materials Science and Engineering, Nankai University, Tianjin 300350, ChinaSchool of Materials Science and Engineering, Nankai University, Tianjin 300350, ChinaSchool of Materials Science and Engineering, Nankai University, Tianjin 300350, ChinaPerovskite quantum dots (PQDs) have shown great promise in optoelectronic device applications. Typically, a traditional hot-injection method with heating and high vacuum pressure is used to synthesize these colloidal nanoparticles. In this article, we report a low-cost synthetic method for FAPbI<sub>3</sub> PQDs in air at atmospheric pressure with the assistance of ZnI<sub>2</sub>. Compared with the FAPbI<sub>3</sub> PQDs synthesized under vacuum/N<sub>2</sub> condition, the air-synthesized Zn:FAPbI<sub>3</sub> PQDs exhibit the same crystalline structure with a similar preferential crystallographic orientation but demonstrate higher colloidal stability and higher production yield. Furthermore, we examine the influence of ZnI<sub>2</sub> during the synthesis process on morphologies and optoelectronic properties. The results show that the mean size of the obtained FAPbI<sub>3</sub> PQDs is decreased by increasing the amount of added ZnI<sub>2</sub>. More importantly, introducing an optimal amount of ZnI<sub>2</sub> into the Pb source precursor enables increasing the carrier lifetime of FAPbI<sub>3</sub> PQDs, showing the potential beneficial effect on device performance.https://www.mdpi.com/2079-4991/13/2/226perovskite quantum dothot-injection synthesisatmospheric pressureZnI<sub>2</sub> additivescarrier lifetime |
spellingShingle | Shuo Wang Simiao Li Qian Zhao A Low-Cost Synthetic Route of FAPbI<sub>3</sub> Quantum Dots in Air at Atmospheric Pressure: The Role of Zinc Iodide Additives Nanomaterials perovskite quantum dot hot-injection synthesis atmospheric pressure ZnI<sub>2</sub> additives carrier lifetime |
title | A Low-Cost Synthetic Route of FAPbI<sub>3</sub> Quantum Dots in Air at Atmospheric Pressure: The Role of Zinc Iodide Additives |
title_full | A Low-Cost Synthetic Route of FAPbI<sub>3</sub> Quantum Dots in Air at Atmospheric Pressure: The Role of Zinc Iodide Additives |
title_fullStr | A Low-Cost Synthetic Route of FAPbI<sub>3</sub> Quantum Dots in Air at Atmospheric Pressure: The Role of Zinc Iodide Additives |
title_full_unstemmed | A Low-Cost Synthetic Route of FAPbI<sub>3</sub> Quantum Dots in Air at Atmospheric Pressure: The Role of Zinc Iodide Additives |
title_short | A Low-Cost Synthetic Route of FAPbI<sub>3</sub> Quantum Dots in Air at Atmospheric Pressure: The Role of Zinc Iodide Additives |
title_sort | low cost synthetic route of fapbi sub 3 sub quantum dots in air at atmospheric pressure the role of zinc iodide additives |
topic | perovskite quantum dot hot-injection synthesis atmospheric pressure ZnI<sub>2</sub> additives carrier lifetime |
url | https://www.mdpi.com/2079-4991/13/2/226 |
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