Soliton formation and spectral translation into visible on CMOS-compatible 4H-silicon-carbide-on-insulator platform
Abstract Recent advancements in integrated soliton microcombs open the route to a wide range of chip-based communication, sensing, and metrology applications. The technology translation from laboratory demonstrations to real-world applications requires the fabrication process of photonics chips to b...
Main Authors: | , , , , , , , , , , , , |
---|---|
Format: | Article |
Language: | English |
Published: |
Nature Publishing Group
2022-12-01
|
Series: | Light: Science & Applications |
Online Access: | https://doi.org/10.1038/s41377-022-01042-w |
_version_ | 1811188752071000064 |
---|---|
author | Chengli Wang Jin Li Ailun Yi Zhiwei Fang Liping Zhou Zhe Wang Rui Niu Yang Chen Jiaxiang Zhang Ya Cheng Junqiu Liu Chun-Hua Dong Xin Ou |
author_facet | Chengli Wang Jin Li Ailun Yi Zhiwei Fang Liping Zhou Zhe Wang Rui Niu Yang Chen Jiaxiang Zhang Ya Cheng Junqiu Liu Chun-Hua Dong Xin Ou |
author_sort | Chengli Wang |
collection | DOAJ |
description | Abstract Recent advancements in integrated soliton microcombs open the route to a wide range of chip-based communication, sensing, and metrology applications. The technology translation from laboratory demonstrations to real-world applications requires the fabrication process of photonics chips to be fully CMOS-compatible, such that the manufacturing can take advantage of the ongoing evolution of semiconductor technology at reduced cost and with high volume. Silicon nitride has become the leading CMOS platform for integrated soliton devices, however, it is an insulator and lacks intrinsic second-order nonlinearity for electro-optic modulation. Other materials have emerged such as AlN, LiNbO3, AlGaAs and GaP that exhibit simultaneous second- and third-order nonlinearities. Here, we show that silicon carbide (SiC) -- already commercially deployed in nearly ubiquitous electrical power devices such as RF electronics, MOSFET, and MEMS due to its wide bandgap properties, excellent mechanical properties, piezoelectricity and chemical inertia -- is a new competitive CMOS-compatible platform for nonlinear photonics. High-quality-factor microresonators (Q = 4 × 106) are fabricated on 4H-SiC-on-insulator thin films, where a single soliton microcomb is generated. In addition, we observe wide spectral translation of chaotic microcombs from near-infrared to visible due to the second-order nonlinearity of SiC. Our work highlights the prospects of SiC for future low-loss integrated nonlinear and quantum photonics that could harness electro-opto-mechanical interactions on a monolithic platform. |
first_indexed | 2024-04-11T14:23:42Z |
format | Article |
id | doaj.art-c93dc1f90afc4565a7baa92141c850b4 |
institution | Directory Open Access Journal |
issn | 2047-7538 |
language | English |
last_indexed | 2024-04-11T14:23:42Z |
publishDate | 2022-12-01 |
publisher | Nature Publishing Group |
record_format | Article |
series | Light: Science & Applications |
spelling | doaj.art-c93dc1f90afc4565a7baa92141c850b42022-12-22T04:18:56ZengNature Publishing GroupLight: Science & Applications2047-75382022-12-0111111010.1038/s41377-022-01042-wSoliton formation and spectral translation into visible on CMOS-compatible 4H-silicon-carbide-on-insulator platformChengli Wang0Jin Li1Ailun Yi2Zhiwei Fang3Liping Zhou4Zhe Wang5Rui Niu6Yang Chen7Jiaxiang Zhang8Ya Cheng9Junqiu Liu10Chun-Hua Dong11Xin Ou12State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of SciencesCAS Key Laboratory of Quantum Information, University of Science and Technology of ChinaState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of SciencesThe Extreme Optoelectromechanics Laboratory (XXL), School of Physics and Electronic Science, East China Normal UniversityState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of SciencesThe Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of SciencesCAS Key Laboratory of Quantum Information, University of Science and Technology of ChinaState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of SciencesState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of SciencesThe Extreme Optoelectromechanics Laboratory (XXL), School of Physics and Electronic Science, East China Normal UniversityInternational Quantum AcademyCAS Key Laboratory of Quantum Information, University of Science and Technology of ChinaState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of SciencesAbstract Recent advancements in integrated soliton microcombs open the route to a wide range of chip-based communication, sensing, and metrology applications. The technology translation from laboratory demonstrations to real-world applications requires the fabrication process of photonics chips to be fully CMOS-compatible, such that the manufacturing can take advantage of the ongoing evolution of semiconductor technology at reduced cost and with high volume. Silicon nitride has become the leading CMOS platform for integrated soliton devices, however, it is an insulator and lacks intrinsic second-order nonlinearity for electro-optic modulation. Other materials have emerged such as AlN, LiNbO3, AlGaAs and GaP that exhibit simultaneous second- and third-order nonlinearities. Here, we show that silicon carbide (SiC) -- already commercially deployed in nearly ubiquitous electrical power devices such as RF electronics, MOSFET, and MEMS due to its wide bandgap properties, excellent mechanical properties, piezoelectricity and chemical inertia -- is a new competitive CMOS-compatible platform for nonlinear photonics. High-quality-factor microresonators (Q = 4 × 106) are fabricated on 4H-SiC-on-insulator thin films, where a single soliton microcomb is generated. In addition, we observe wide spectral translation of chaotic microcombs from near-infrared to visible due to the second-order nonlinearity of SiC. Our work highlights the prospects of SiC for future low-loss integrated nonlinear and quantum photonics that could harness electro-opto-mechanical interactions on a monolithic platform.https://doi.org/10.1038/s41377-022-01042-w |
spellingShingle | Chengli Wang Jin Li Ailun Yi Zhiwei Fang Liping Zhou Zhe Wang Rui Niu Yang Chen Jiaxiang Zhang Ya Cheng Junqiu Liu Chun-Hua Dong Xin Ou Soliton formation and spectral translation into visible on CMOS-compatible 4H-silicon-carbide-on-insulator platform Light: Science & Applications |
title | Soliton formation and spectral translation into visible on CMOS-compatible 4H-silicon-carbide-on-insulator platform |
title_full | Soliton formation and spectral translation into visible on CMOS-compatible 4H-silicon-carbide-on-insulator platform |
title_fullStr | Soliton formation and spectral translation into visible on CMOS-compatible 4H-silicon-carbide-on-insulator platform |
title_full_unstemmed | Soliton formation and spectral translation into visible on CMOS-compatible 4H-silicon-carbide-on-insulator platform |
title_short | Soliton formation and spectral translation into visible on CMOS-compatible 4H-silicon-carbide-on-insulator platform |
title_sort | soliton formation and spectral translation into visible on cmos compatible 4h silicon carbide on insulator platform |
url | https://doi.org/10.1038/s41377-022-01042-w |
work_keys_str_mv | AT chengliwang solitonformationandspectraltranslationintovisibleoncmoscompatible4hsiliconcarbideoninsulatorplatform AT jinli solitonformationandspectraltranslationintovisibleoncmoscompatible4hsiliconcarbideoninsulatorplatform AT ailunyi solitonformationandspectraltranslationintovisibleoncmoscompatible4hsiliconcarbideoninsulatorplatform AT zhiweifang solitonformationandspectraltranslationintovisibleoncmoscompatible4hsiliconcarbideoninsulatorplatform AT lipingzhou solitonformationandspectraltranslationintovisibleoncmoscompatible4hsiliconcarbideoninsulatorplatform AT zhewang solitonformationandspectraltranslationintovisibleoncmoscompatible4hsiliconcarbideoninsulatorplatform AT ruiniu solitonformationandspectraltranslationintovisibleoncmoscompatible4hsiliconcarbideoninsulatorplatform AT yangchen solitonformationandspectraltranslationintovisibleoncmoscompatible4hsiliconcarbideoninsulatorplatform AT jiaxiangzhang solitonformationandspectraltranslationintovisibleoncmoscompatible4hsiliconcarbideoninsulatorplatform AT yacheng solitonformationandspectraltranslationintovisibleoncmoscompatible4hsiliconcarbideoninsulatorplatform AT junqiuliu solitonformationandspectraltranslationintovisibleoncmoscompatible4hsiliconcarbideoninsulatorplatform AT chunhuadong solitonformationandspectraltranslationintovisibleoncmoscompatible4hsiliconcarbideoninsulatorplatform AT xinou solitonformationandspectraltranslationintovisibleoncmoscompatible4hsiliconcarbideoninsulatorplatform |