Excitonic Insulator Enabled Ultrasensitive Terahertz Photodetection with Efficient Low‐Energy Photon Harvesting
Abstract Despite the interest toward the terahertz (THz) rapidly increasing, the high‐efficient detection of THz photon is not widely available due to the low photoelectric conversion efficiency at this low‐energy photon regime. Excitonic insulator (EI) states in emerging materials with anomalous op...
| Main Authors: | , , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2022-12-01
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| Series: | Advanced Science |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/advs.202204580 |
| _version_ | 1828084612900847616 |
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| author | Zhuo Dong Wanlong Guo Libo Zhang Yan Zhang Jie Chen Luyi Huang Cheng Chen Liu Yang Zeqian Ren Junrong Zhang Wenzhi Yu Jie Li Lin Wang Kai Zhang |
| author_facet | Zhuo Dong Wanlong Guo Libo Zhang Yan Zhang Jie Chen Luyi Huang Cheng Chen Liu Yang Zeqian Ren Junrong Zhang Wenzhi Yu Jie Li Lin Wang Kai Zhang |
| author_sort | Zhuo Dong |
| collection | DOAJ |
| description | Abstract Despite the interest toward the terahertz (THz) rapidly increasing, the high‐efficient detection of THz photon is not widely available due to the low photoelectric conversion efficiency at this low‐energy photon regime. Excitonic insulator (EI) states in emerging materials with anomalous optical transitions and renormalized valence band dispersions render their nontrivial photoresponse, which offers the prospect of harnessing the novel EI properties for the THz detection. Here, an EI‐based photodetector is developed for efficient photoelectric conversion in the THz band. High‐quality EI material Ta2NiSe5 is synthesized and the existence of the EI state at room temperature is confirmed. The THz scanning near‐field optical microscopy experimentally reveals the strong light–matter interaction in the THz band of EI state in the Ta2NiSe5. Benefiting from the strong light–matter interaction, the Ta2NiSe5‐based photodetectors exhibit superior THz detection performances with a detection sensitivity of ≈42 pW Hz−1/2 and a response time of ≈1.1 µs at 0.1 THz at room temperature. This study provides a new avenue for realizing novel high‐performance THz photodetectors by exploiting the emerging EI materials. |
| first_indexed | 2024-04-11T04:28:36Z |
| format | Article |
| id | doaj.art-c97508b723af42f8b57b094644a818da |
| institution | Directory Open Access Journal |
| issn | 2198-3844 |
| language | English |
| last_indexed | 2024-04-11T04:28:36Z |
| publishDate | 2022-12-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advanced Science |
| spelling | doaj.art-c97508b723af42f8b57b094644a818da2022-12-29T14:19:16ZengWileyAdvanced Science2198-38442022-12-01936n/an/a10.1002/advs.202204580Excitonic Insulator Enabled Ultrasensitive Terahertz Photodetection with Efficient Low‐Energy Photon HarvestingZhuo Dong0Wanlong Guo1Libo Zhang2Yan Zhang3Jie Chen4Luyi Huang5Cheng Chen6Liu Yang7Zeqian Ren8Junrong Zhang9Wenzhi Yu10Jie Li11Lin Wang12Kai Zhang13CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications i‐Lab Suzhou Institute of Nano‐Tech and Nano‐Bionics (SINANO) Chinese Academy of Sciences Ruoshui Road 398 Suzhou Jiangsu 215123 P. R. ChinaState Key Laboratory for Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences 500 Yu‐tian Road Shanghai 200083 P. R. ChinaState Key Laboratory for Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences 500 Yu‐tian Road Shanghai 200083 P. R. ChinaCAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications i‐Lab Suzhou Institute of Nano‐Tech and Nano‐Bionics (SINANO) Chinese Academy of Sciences Ruoshui Road 398 Suzhou Jiangsu 215123 P. R. ChinaCAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications i‐Lab Suzhou Institute of Nano‐Tech and Nano‐Bionics (SINANO) Chinese Academy of Sciences Ruoshui Road 398 Suzhou Jiangsu 215123 P. R. ChinaCAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications i‐Lab Suzhou Institute of Nano‐Tech and Nano‐Bionics (SINANO) Chinese Academy of Sciences Ruoshui Road 398 Suzhou Jiangsu 215123 P. R. ChinaCAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications i‐Lab Suzhou Institute of Nano‐Tech and Nano‐Bionics (SINANO) Chinese Academy of Sciences Ruoshui Road 398 Suzhou Jiangsu 215123 P. R. ChinaCAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications i‐Lab Suzhou Institute of Nano‐Tech and Nano‐Bionics (SINANO) Chinese Academy of Sciences Ruoshui Road 398 Suzhou Jiangsu 215123 P. R. ChinaCAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications i‐Lab Suzhou Institute of Nano‐Tech and Nano‐Bionics (SINANO) Chinese Academy of Sciences Ruoshui Road 398 Suzhou Jiangsu 215123 P. R. ChinaCAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications i‐Lab Suzhou Institute of Nano‐Tech and Nano‐Bionics (SINANO) Chinese Academy of Sciences Ruoshui Road 398 Suzhou Jiangsu 215123 P. R. ChinaSongshan Lake Materials Laboratory Dongguan Guangdong 523000 P. R. ChinaCAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications i‐Lab Suzhou Institute of Nano‐Tech and Nano‐Bionics (SINANO) Chinese Academy of Sciences Ruoshui Road 398 Suzhou Jiangsu 215123 P. R. ChinaState Key Laboratory for Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences 500 Yu‐tian Road Shanghai 200083 P. R. ChinaCAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications i‐Lab Suzhou Institute of Nano‐Tech and Nano‐Bionics (SINANO) Chinese Academy of Sciences Ruoshui Road 398 Suzhou Jiangsu 215123 P. R. ChinaAbstract Despite the interest toward the terahertz (THz) rapidly increasing, the high‐efficient detection of THz photon is not widely available due to the low photoelectric conversion efficiency at this low‐energy photon regime. Excitonic insulator (EI) states in emerging materials with anomalous optical transitions and renormalized valence band dispersions render their nontrivial photoresponse, which offers the prospect of harnessing the novel EI properties for the THz detection. Here, an EI‐based photodetector is developed for efficient photoelectric conversion in the THz band. High‐quality EI material Ta2NiSe5 is synthesized and the existence of the EI state at room temperature is confirmed. The THz scanning near‐field optical microscopy experimentally reveals the strong light–matter interaction in the THz band of EI state in the Ta2NiSe5. Benefiting from the strong light–matter interaction, the Ta2NiSe5‐based photodetectors exhibit superior THz detection performances with a detection sensitivity of ≈42 pW Hz−1/2 and a response time of ≈1.1 µs at 0.1 THz at room temperature. This study provides a new avenue for realizing novel high‐performance THz photodetectors by exploiting the emerging EI materials.https://doi.org/10.1002/advs.2022045802D materialsexciton insulatorlight–matter interactionphotodetectionterahertz |
| spellingShingle | Zhuo Dong Wanlong Guo Libo Zhang Yan Zhang Jie Chen Luyi Huang Cheng Chen Liu Yang Zeqian Ren Junrong Zhang Wenzhi Yu Jie Li Lin Wang Kai Zhang Excitonic Insulator Enabled Ultrasensitive Terahertz Photodetection with Efficient Low‐Energy Photon Harvesting Advanced Science 2D materials exciton insulator light–matter interaction photodetection terahertz |
| title | Excitonic Insulator Enabled Ultrasensitive Terahertz Photodetection with Efficient Low‐Energy Photon Harvesting |
| title_full | Excitonic Insulator Enabled Ultrasensitive Terahertz Photodetection with Efficient Low‐Energy Photon Harvesting |
| title_fullStr | Excitonic Insulator Enabled Ultrasensitive Terahertz Photodetection with Efficient Low‐Energy Photon Harvesting |
| title_full_unstemmed | Excitonic Insulator Enabled Ultrasensitive Terahertz Photodetection with Efficient Low‐Energy Photon Harvesting |
| title_short | Excitonic Insulator Enabled Ultrasensitive Terahertz Photodetection with Efficient Low‐Energy Photon Harvesting |
| title_sort | excitonic insulator enabled ultrasensitive terahertz photodetection with efficient low energy photon harvesting |
| topic | 2D materials exciton insulator light–matter interaction photodetection terahertz |
| url | https://doi.org/10.1002/advs.202204580 |
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