High-Quality, InN-Based, Saturable Absorbers for Ultrafast Laser Development
New fabrication methods are strongly demanded for the development of thin-film saturable absorbers with improved optical properties (absorption band, modulation depth, nonlinear optical response). In this sense, we investigate the performance of indium nitride (InN) epitaxial layers with low residua...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2020-11-01
|
| Series: | Applied Sciences |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2076-3417/10/21/7832 |
| _version_ | 1827702859096915968 |
|---|---|
| author | Laura Monroy Marco Jiménez-Rodríguez Eva Monroy Miguel González-Herráez Fernando B. Naranjo |
| author_facet | Laura Monroy Marco Jiménez-Rodríguez Eva Monroy Miguel González-Herráez Fernando B. Naranjo |
| author_sort | Laura Monroy |
| collection | DOAJ |
| description | New fabrication methods are strongly demanded for the development of thin-film saturable absorbers with improved optical properties (absorption band, modulation depth, nonlinear optical response). In this sense, we investigate the performance of indium nitride (InN) epitaxial layers with low residual carrier concentration (<10<sup>18</sup> cm<sup>−3</sup>), which results in improved performance at telecom wavelengths (1560 nm). These materials have demonstrated a huge modulation depth of 23% and a saturation fluence of 830 µJ/cm<sup>2</sup>, and a large saturable absorption around −3 × 10<sup>4</sup> cm/GW has been observed, attaining an enhanced, nonlinear change in transmittance. We have studied the use of such InN layers as semiconductor saturable absorber mirrors (SESAMs) for an erbium (Er)-doped fiber laser to perform mode-locking generation at 1560 nm. We demonstrate highly stable, ultrashort (134 fs) pulses with an energy of up to 5.6 nJ. |
| first_indexed | 2024-03-10T15:05:28Z |
| format | Article |
| id | doaj.art-c98a8b30fd6e47aaa54442e1c35b746b |
| institution | Directory Open Access Journal |
| issn | 2076-3417 |
| language | English |
| last_indexed | 2024-03-10T15:05:28Z |
| publishDate | 2020-11-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Applied Sciences |
| spelling | doaj.art-c98a8b30fd6e47aaa54442e1c35b746b2023-11-20T19:48:28ZengMDPI AGApplied Sciences2076-34172020-11-011021783210.3390/app10217832High-Quality, InN-Based, Saturable Absorbers for Ultrafast Laser DevelopmentLaura Monroy0Marco Jiménez-Rodríguez1Eva Monroy2Miguel González-Herráez3Fernando B. Naranjo4Grupo de Ingeniería Fotónica, Departamento de Electrónica (EPS) Universidad de Alcalá, Campus Universitario, Alcalá de Henares, 28871 Madrid, SpainGrupo de Ingeniería Fotónica, Departamento de Electrónica (EPS) Universidad de Alcalá, Campus Universitario, Alcalá de Henares, 28871 Madrid, SpainCEA-IRIG-DEPHY-PHELIQS, Univ. Grenoble-Alpes, 17 av. des Martyrs, Grenoble 38000, FranceGrupo de Ingeniería Fotónica, Departamento de Electrónica (EPS) Universidad de Alcalá, Campus Universitario, Alcalá de Henares, 28871 Madrid, SpainGrupo de Ingeniería Fotónica, Departamento de Electrónica (EPS) Universidad de Alcalá, Campus Universitario, Alcalá de Henares, 28871 Madrid, SpainNew fabrication methods are strongly demanded for the development of thin-film saturable absorbers with improved optical properties (absorption band, modulation depth, nonlinear optical response). In this sense, we investigate the performance of indium nitride (InN) epitaxial layers with low residual carrier concentration (<10<sup>18</sup> cm<sup>−3</sup>), which results in improved performance at telecom wavelengths (1560 nm). These materials have demonstrated a huge modulation depth of 23% and a saturation fluence of 830 µJ/cm<sup>2</sup>, and a large saturable absorption around −3 × 10<sup>4</sup> cm/GW has been observed, attaining an enhanced, nonlinear change in transmittance. We have studied the use of such InN layers as semiconductor saturable absorber mirrors (SESAMs) for an erbium (Er)-doped fiber laser to perform mode-locking generation at 1560 nm. We demonstrate highly stable, ultrashort (134 fs) pulses with an energy of up to 5.6 nJ.https://www.mdpi.com/2076-3417/10/21/7832saturable absorbersnonlinear effectsmaterial defects |
| spellingShingle | Laura Monroy Marco Jiménez-Rodríguez Eva Monroy Miguel González-Herráez Fernando B. Naranjo High-Quality, InN-Based, Saturable Absorbers for Ultrafast Laser Development Applied Sciences saturable absorbers nonlinear effects material defects |
| title | High-Quality, InN-Based, Saturable Absorbers for Ultrafast Laser Development |
| title_full | High-Quality, InN-Based, Saturable Absorbers for Ultrafast Laser Development |
| title_fullStr | High-Quality, InN-Based, Saturable Absorbers for Ultrafast Laser Development |
| title_full_unstemmed | High-Quality, InN-Based, Saturable Absorbers for Ultrafast Laser Development |
| title_short | High-Quality, InN-Based, Saturable Absorbers for Ultrafast Laser Development |
| title_sort | high quality inn based saturable absorbers for ultrafast laser development |
| topic | saturable absorbers nonlinear effects material defects |
| url | https://www.mdpi.com/2076-3417/10/21/7832 |
| work_keys_str_mv | AT lauramonroy highqualityinnbasedsaturableabsorbersforultrafastlaserdevelopment AT marcojimenezrodriguez highqualityinnbasedsaturableabsorbersforultrafastlaserdevelopment AT evamonroy highqualityinnbasedsaturableabsorbersforultrafastlaserdevelopment AT miguelgonzalezherraez highqualityinnbasedsaturableabsorbersforultrafastlaserdevelopment AT fernandobnaranjo highqualityinnbasedsaturableabsorbersforultrafastlaserdevelopment |