Multi-qubit gate with trapped ions for microwave and laser-based implementation

Multi-qubit gate with trapped ions for microwave and laser-based implementation

A proposal for a phase gate and a Mølmer–Sørensen gate in the dressed state basis is presented. In order to perform the multi-qubit interaction, a strong magnetic field gradient is required to couple the phonon-bus to the qubit states. The gate is performed using resonant microwave driving fields to...

Ausführliche Beschreibung

Bibliographische Detailangaben
Hauptverfasser: I Cohen, S Weidt, W K Hensinger, A Retzker
Format: Artikel
Sprache:English
Veröffentlicht: IOP Publishing 2015-01-01
Schriftenreihe:New Journal of Physics
Schlagworte:
trapped ions
quantum information processing
quantum gates
03.67.Ac
03.67.-a
37.10.Vz
Online Zugang:https://doi.org/10.1088/1367-2630/17/4/043008

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