A Label-Free Immunosensor for IgG Based on an Extended-Gate Type Organic Field Effect Transistor
A novel biosensor for immunoglobulin G (IgG) detection based on an extended-gate type organic field effect transistor (OFET) has been developed that possesses an anti-IgG antibody on its extended-gate electrode and can be operated below 3 V. The titration results from the target IgG in the presence...
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MDPI AG
2014-09-01
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| Online Access: | http://www.mdpi.com/1996-1944/7/9/6843 |
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| author | Tsukuru Minamiki Tsuyoshi Minami Ryoji Kurita Osamu Niwa Shin-ichi Wakida Kenjiro Fukuda Daisuke Kumaki Shizuo Tokito |
| author_facet | Tsukuru Minamiki Tsuyoshi Minami Ryoji Kurita Osamu Niwa Shin-ichi Wakida Kenjiro Fukuda Daisuke Kumaki Shizuo Tokito |
| author_sort | Tsukuru Minamiki |
| collection | DOAJ |
| description | A novel biosensor for immunoglobulin G (IgG) detection based on an extended-gate type organic field effect transistor (OFET) has been developed that possesses an anti-IgG antibody on its extended-gate electrode and can be operated below 3 V. The titration results from the target IgG in the presence of a bovine serum albumin interferent, clearly exhibiting a negative shift in the OFET transfer curve with increasing IgG concentration. This is presumed to be due an interaction between target IgG and the immobilized anti-IgG antibody on the extended-gate electrode. As a result, a linear range from 0 to 10 µg/mL was achieved with a relatively low detection limit of 0.62 µg/mL (=4 nM). We believe that these results open up opportunities for applying extended-gate-type OFETs to immunosensing. |
| first_indexed | 2024-04-12T06:25:14Z |
| format | Article |
| id | doaj.art-c9c1edbee1be4c52a41346992d778e13 |
| institution | Directory Open Access Journal |
| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-04-12T06:25:14Z |
| publishDate | 2014-09-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Materials |
| spelling | doaj.art-c9c1edbee1be4c52a41346992d778e132022-12-22T03:44:11ZengMDPI AGMaterials1996-19442014-09-01796843685210.3390/ma7096843ma7096843A Label-Free Immunosensor for IgG Based on an Extended-Gate Type Organic Field Effect TransistorTsukuru Minamiki0Tsuyoshi Minami1Ryoji Kurita2Osamu Niwa3Shin-ichi Wakida4Kenjiro Fukuda5Daisuke Kumaki6Shizuo Tokito7Research Center for Organic Electronics (ROEL), Graduate School of Science and Engineering, Yamagata University, 4-3-16 Jonan, Yonezawa, Yamagata 992-8510, JapanResearch Center for Organic Electronics (ROEL), Graduate School of Science and Engineering, Yamagata University, 4-3-16 Jonan, Yonezawa, Yamagata 992-8510, JapanBiomedical Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 6, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8566, JapanBiomedical Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 6, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8566, JapanHealth Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 2217-14 Hayashi, Takamatsu, Kagawa 761-0395, JapanResearch Center for Organic Electronics (ROEL), Graduate School of Science and Engineering, Yamagata University, 4-3-16 Jonan, Yonezawa, Yamagata 992-8510, JapanResearch Center for Organic Electronics (ROEL), Graduate School of Science and Engineering, Yamagata University, 4-3-16 Jonan, Yonezawa, Yamagata 992-8510, JapanResearch Center for Organic Electronics (ROEL), Graduate School of Science and Engineering, Yamagata University, 4-3-16 Jonan, Yonezawa, Yamagata 992-8510, JapanA novel biosensor for immunoglobulin G (IgG) detection based on an extended-gate type organic field effect transistor (OFET) has been developed that possesses an anti-IgG antibody on its extended-gate electrode and can be operated below 3 V. The titration results from the target IgG in the presence of a bovine serum albumin interferent, clearly exhibiting a negative shift in the OFET transfer curve with increasing IgG concentration. This is presumed to be due an interaction between target IgG and the immobilized anti-IgG antibody on the extended-gate electrode. As a result, a linear range from 0 to 10 µg/mL was achieved with a relatively low detection limit of 0.62 µg/mL (=4 nM). We believe that these results open up opportunities for applying extended-gate-type OFETs to immunosensing.http://www.mdpi.com/1996-1944/7/9/6843organic field effect transistorimmunosensorlabel-freeimmunoglobulin Gself-assembled monolayer |
| spellingShingle | Tsukuru Minamiki Tsuyoshi Minami Ryoji Kurita Osamu Niwa Shin-ichi Wakida Kenjiro Fukuda Daisuke Kumaki Shizuo Tokito A Label-Free Immunosensor for IgG Based on an Extended-Gate Type Organic Field Effect Transistor Materials organic field effect transistor immunosensor label-free immunoglobulin G self-assembled monolayer |
| title | A Label-Free Immunosensor for IgG Based on an Extended-Gate Type Organic Field Effect Transistor |
| title_full | A Label-Free Immunosensor for IgG Based on an Extended-Gate Type Organic Field Effect Transistor |
| title_fullStr | A Label-Free Immunosensor for IgG Based on an Extended-Gate Type Organic Field Effect Transistor |
| title_full_unstemmed | A Label-Free Immunosensor for IgG Based on an Extended-Gate Type Organic Field Effect Transistor |
| title_short | A Label-Free Immunosensor for IgG Based on an Extended-Gate Type Organic Field Effect Transistor |
| title_sort | label free immunosensor for igg based on an extended gate type organic field effect transistor |
| topic | organic field effect transistor immunosensor label-free immunoglobulin G self-assembled monolayer |
| url | http://www.mdpi.com/1996-1944/7/9/6843 |
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