Effect of Piezoresistive Behavior on Electron Emission from Individual Silicon Carbide Nanowire
The excellent properties of silicon carbide (SiC) make it widely applied in high-voltage, high-power, and high-temperature electronic devices. SiC nanowires combine the excellent physical properties of SiC material and the advantages of nanoscale structures, thus attracting significant attention fro...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2019-07-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/9/7/981 |
| _version_ | 1811230331526709248 |
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| author | Peng Zhao Yu Zhang Shuai Tang Runze Zhan Juncong She Jun Chen Ningsheng Xu Shaozhi Deng |
| author_facet | Peng Zhao Yu Zhang Shuai Tang Runze Zhan Juncong She Jun Chen Ningsheng Xu Shaozhi Deng |
| author_sort | Peng Zhao |
| collection | DOAJ |
| description | The excellent properties of silicon carbide (SiC) make it widely applied in high-voltage, high-power, and high-temperature electronic devices. SiC nanowires combine the excellent physical properties of SiC material and the advantages of nanoscale structures, thus attracting significant attention from researchers. Herein, the electron vacuum tunneling emission characteristics of an individual SiC nanowire affected by the piezoresistive effect are investigated using in situ electric measurement in a scanning electron microscope (SEM) chamber. The results demonstrate that the piezoresistive effect caused by the electrostatic force has a significant impact on the electronic transport properties of the nanowire, and the excellent electron emission characteristics can be achieved in the pulse voltage driving mode, including lower turn-on voltage and higher maximum current. Furthermore, a physical model about the piezoresistive effect of SiC nanowire is proposed to explain the transformation of electronic transport under the action of electrostatic force in DC voltage and pulsed voltage driving modes. The findings can provide a way to obtain excellent electron emission characteristics from SiC nanowires. |
| first_indexed | 2024-04-12T10:27:27Z |
| format | Article |
| id | doaj.art-c9c2c102f456472e9e2c5aa220f260b5 |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-04-12T10:27:27Z |
| publishDate | 2019-07-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-c9c2c102f456472e9e2c5aa220f260b52022-12-22T03:36:57ZengMDPI AGNanomaterials2079-49912019-07-019798110.3390/nano9070981nano9070981Effect of Piezoresistive Behavior on Electron Emission from Individual Silicon Carbide NanowirePeng Zhao0Yu Zhang1Shuai Tang2Runze Zhan3Juncong She4Jun Chen5Ningsheng Xu6Shaozhi Deng7State Key Laboratory Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, and School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, ChinaState Key Laboratory Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, and School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, ChinaState Key Laboratory Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, and School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, ChinaState Key Laboratory Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, and School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, ChinaState Key Laboratory Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, and School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, ChinaState Key Laboratory Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, and School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, ChinaState Key Laboratory Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, and School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, ChinaState Key Laboratory Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, and School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, ChinaThe excellent properties of silicon carbide (SiC) make it widely applied in high-voltage, high-power, and high-temperature electronic devices. SiC nanowires combine the excellent physical properties of SiC material and the advantages of nanoscale structures, thus attracting significant attention from researchers. Herein, the electron vacuum tunneling emission characteristics of an individual SiC nanowire affected by the piezoresistive effect are investigated using in situ electric measurement in a scanning electron microscope (SEM) chamber. The results demonstrate that the piezoresistive effect caused by the electrostatic force has a significant impact on the electronic transport properties of the nanowire, and the excellent electron emission characteristics can be achieved in the pulse voltage driving mode, including lower turn-on voltage and higher maximum current. Furthermore, a physical model about the piezoresistive effect of SiC nanowire is proposed to explain the transformation of electronic transport under the action of electrostatic force in DC voltage and pulsed voltage driving modes. The findings can provide a way to obtain excellent electron emission characteristics from SiC nanowires.https://www.mdpi.com/2079-4991/9/7/981silicon carbide nanowirepiezoresistive effectelectronic transportin situ electric measurementpulse-voltage drivingelectron emission |
| spellingShingle | Peng Zhao Yu Zhang Shuai Tang Runze Zhan Juncong She Jun Chen Ningsheng Xu Shaozhi Deng Effect of Piezoresistive Behavior on Electron Emission from Individual Silicon Carbide Nanowire Nanomaterials silicon carbide nanowire piezoresistive effect electronic transport in situ electric measurement pulse-voltage driving electron emission |
| title | Effect of Piezoresistive Behavior on Electron Emission from Individual Silicon Carbide Nanowire |
| title_full | Effect of Piezoresistive Behavior on Electron Emission from Individual Silicon Carbide Nanowire |
| title_fullStr | Effect of Piezoresistive Behavior on Electron Emission from Individual Silicon Carbide Nanowire |
| title_full_unstemmed | Effect of Piezoresistive Behavior on Electron Emission from Individual Silicon Carbide Nanowire |
| title_short | Effect of Piezoresistive Behavior on Electron Emission from Individual Silicon Carbide Nanowire |
| title_sort | effect of piezoresistive behavior on electron emission from individual silicon carbide nanowire |
| topic | silicon carbide nanowire piezoresistive effect electronic transport in situ electric measurement pulse-voltage driving electron emission |
| url | https://www.mdpi.com/2079-4991/9/7/981 |
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