Selective electrodeposition of indium microstructures on silicon and their conversion into InAs and InSb semiconductors
Abstract The idea of benefitting from the properties of III-V semiconductors and silicon on the same substrate has been occupying the minds of scientists for several years. Although the principle of III-V integration on a silicon-based platform is simple, it is often challenging to perform due to de...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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SpringerOpen
2023-02-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | https://doi.org/10.1186/s11671-023-03778-9 |
| _version_ | 1797696154511605760 |
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| author | Katarzyna E. Hnida-Gut Marilyne Sousa Preksha Tiwari Heinz Schmid |
| author_facet | Katarzyna E. Hnida-Gut Marilyne Sousa Preksha Tiwari Heinz Schmid |
| author_sort | Katarzyna E. Hnida-Gut |
| collection | DOAJ |
| description | Abstract The idea of benefitting from the properties of III-V semiconductors and silicon on the same substrate has been occupying the minds of scientists for several years. Although the principle of III-V integration on a silicon-based platform is simple, it is often challenging to perform due to demanding requirements for sample preparation rising from a mismatch in physical properties between those semiconductor groups (e.g. different lattice constants and thermal expansion coefficients), high cost of device-grade materials formation and their post-processing. In this paper, we demonstrate the deposition of group-III metal and III-V semiconductors in microfabricated template structures on silicon as a strategy for heterogeneous device integration on Si. The metal (indium) is selectively electrodeposited in a 2-electrode galvanostatic configuration with the working electrode (WE) located in each template, resulting in well-defined In structures of high purity. The semiconductors InAs and InSb are obtained by vapour phase diffusion of the corresponding group-V element (As, Sb) into the liquified In confined in the template. We discuss in detail the morphological and structural characterization of the synthesized In, InAs and InSb crystals as well as chemical analysis through scanning electron microscopy (SEM), scanning transmission electron microscopy (TEM/STEM), and energy-dispersive X-ray spectroscopy (EDX). The proposed integration path combines the advantage of the mature top-down lithography technology to define device geometries and employs economic electrodeposition (ED) and vapour phase processes to directly integrate difficult-to-process materials on a silicon platform. Graphical abstract |
| first_indexed | 2024-03-12T03:22:32Z |
| format | Article |
| id | doaj.art-c9c93489e1eb4560add84ce70eabcce1 |
| institution | Directory Open Access Journal |
| issn | 1556-276X |
| language | English |
| last_indexed | 2024-03-12T03:22:32Z |
| publishDate | 2023-02-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-c9c93489e1eb4560add84ce70eabcce12023-09-03T13:52:02ZengSpringerOpenNanoscale Research Letters1556-276X2023-02-0118111110.1186/s11671-023-03778-9Selective electrodeposition of indium microstructures on silicon and their conversion into InAs and InSb semiconductorsKatarzyna E. Hnida-Gut0Marilyne Sousa1Preksha Tiwari2Heinz Schmid3IBM Research Europe – ZurichIBM Research Europe – ZurichIBM Research Europe – ZurichIBM Research Europe – ZurichAbstract The idea of benefitting from the properties of III-V semiconductors and silicon on the same substrate has been occupying the minds of scientists for several years. Although the principle of III-V integration on a silicon-based platform is simple, it is often challenging to perform due to demanding requirements for sample preparation rising from a mismatch in physical properties between those semiconductor groups (e.g. different lattice constants and thermal expansion coefficients), high cost of device-grade materials formation and their post-processing. In this paper, we demonstrate the deposition of group-III metal and III-V semiconductors in microfabricated template structures on silicon as a strategy for heterogeneous device integration on Si. The metal (indium) is selectively electrodeposited in a 2-electrode galvanostatic configuration with the working electrode (WE) located in each template, resulting in well-defined In structures of high purity. The semiconductors InAs and InSb are obtained by vapour phase diffusion of the corresponding group-V element (As, Sb) into the liquified In confined in the template. We discuss in detail the morphological and structural characterization of the synthesized In, InAs and InSb crystals as well as chemical analysis through scanning electron microscopy (SEM), scanning transmission electron microscopy (TEM/STEM), and energy-dispersive X-ray spectroscopy (EDX). The proposed integration path combines the advantage of the mature top-down lithography technology to define device geometries and employs economic electrodeposition (ED) and vapour phase processes to directly integrate difficult-to-process materials on a silicon platform. Graphical abstracthttps://doi.org/10.1186/s11671-023-03778-9IntegrationSaturationElectrodepositionRecrystallizationIII-VsTASE |
| spellingShingle | Katarzyna E. Hnida-Gut Marilyne Sousa Preksha Tiwari Heinz Schmid Selective electrodeposition of indium microstructures on silicon and their conversion into InAs and InSb semiconductors Nanoscale Research Letters Integration Saturation Electrodeposition Recrystallization III-Vs TASE |
| title | Selective electrodeposition of indium microstructures on silicon and their conversion into InAs and InSb semiconductors |
| title_full | Selective electrodeposition of indium microstructures on silicon and their conversion into InAs and InSb semiconductors |
| title_fullStr | Selective electrodeposition of indium microstructures on silicon and their conversion into InAs and InSb semiconductors |
| title_full_unstemmed | Selective electrodeposition of indium microstructures on silicon and their conversion into InAs and InSb semiconductors |
| title_short | Selective electrodeposition of indium microstructures on silicon and their conversion into InAs and InSb semiconductors |
| title_sort | selective electrodeposition of indium microstructures on silicon and their conversion into inas and insb semiconductors |
| topic | Integration Saturation Electrodeposition Recrystallization III-Vs TASE |
| url | https://doi.org/10.1186/s11671-023-03778-9 |
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