Experimental investigation of semiconductor structures of the power source based on carbon-14
The article presents the research results of semiconductor silicon carbide (porous) structures with the implanted carbon-14. The results of experimental measurements collected data on parameters of photovoltaic energy conversion of light quanta into a photo-EMF to confirm the efficiency of p-n junct...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Povolzhskiy State University of Telecommunications & Informatics
2019-03-01
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| Series: | Физика волновых процессов и радиотехнические системы |
| Subjects: | |
| Online Access: | https://journals.ssau.ru/pwp/article/viewFile/7497/7350 |
| Summary: | The article presents the research results of semiconductor silicon carbide (porous) structures with the implanted carbon-14. The results of experimental measurements collected data on parameters of photovoltaic energy conversion of light quanta into a photo-EMF to confirm the efficiency of p-n junction, an evaluation of the effectiveness of the introduction of carbon-14 in the molecule silicon carbide electrophysical measurements. In the process used the technology of solid-phase transformation of the surface of the monocrystalline silicon substrate in the phase of monocrystalline silicon carbide by chemical transport of carbon in the environment of hydrogen. |
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| ISSN: | 1810-3189 2782-294X |