Nanoporous Structure Formation in GaSb, InSb, and Ge by Ion Beam Irradiation under Controlled Point Defect Creation Conditions
Ion beam irradiation-induced nanoporous structure formation was investigated on GaSb, InSb, and Ge surfaces via controlled point defect creation using a focused ion beam (FIB). This paper compares the nanoporous structure formation under the same extent of point defect creation while changing the a...
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| Format: | Article |
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MDPI AG
2017-07-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/7/7/180 |
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| author | Yusuke Yanagida Tomoya Oishi Takashi Miyaji Chiaki Watanabe Noriko Nitta |
| author_facet | Yusuke Yanagida Tomoya Oishi Takashi Miyaji Chiaki Watanabe Noriko Nitta |
| author_sort | Yusuke Yanagida |
| collection | DOAJ |
| description | Ion beam irradiation-induced nanoporous structure formation was investigated on GaSb, InSb, and Ge surfaces via controlled point defect creation using a focused ion beam (FIB). This paper compares the nanoporous structure formation under the same extent of point defect creation while changing the accelerating voltage and ion dose. Although the same number of point defects were created in each case, different structures were formed on the different surfaces. The depth direction density of the point defects was an important factor in this trend. The number of point defects required for nanoporous structure formation was 4 × 1022 vacancies/m2 at a depth of 18 nm under the surface, based on a comparison of similar nanoporous structure features in GaSb. The nanoporous structure formation by ion beam irradiation on GaSb, InSb, and Ge surfaces was controlled by the number and areal distribution of the created point defects. |
| first_indexed | 2024-12-21T12:26:44Z |
| format | Article |
| id | doaj.art-c9e99608e05945b2ad5e0ccff98c8ff6 |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-12-21T12:26:44Z |
| publishDate | 2017-07-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-c9e99608e05945b2ad5e0ccff98c8ff62022-12-21T19:04:09ZengMDPI AGNanomaterials2079-49912017-07-017718010.3390/nano7070180nano7070180Nanoporous Structure Formation in GaSb, InSb, and Ge by Ion Beam Irradiation under Controlled Point Defect Creation ConditionsYusuke Yanagida0Tomoya Oishi1Takashi Miyaji2Chiaki Watanabe3Noriko Nitta4School of Environmental Science and Technology, Kochi University of Technology, Tosayamada, Kami, Kochi 782-8502, JapanSchool of Environmental Science and Technology, Kochi University of Technology, Tosayamada, Kami, Kochi 782-8502, JapanSchool of Environmental Science and Technology, Kochi University of Technology, Tosayamada, Kami, Kochi 782-8502, JapanSchool of Environmental Science and Technology, Kochi University of Technology, Tosayamada, Kami, Kochi 782-8502, JapanSchool of Environmental Science and Technology, Kochi University of Technology, Tosayamada, Kami, Kochi 782-8502, JapanIon beam irradiation-induced nanoporous structure formation was investigated on GaSb, InSb, and Ge surfaces via controlled point defect creation using a focused ion beam (FIB). This paper compares the nanoporous structure formation under the same extent of point defect creation while changing the accelerating voltage and ion dose. Although the same number of point defects were created in each case, different structures were formed on the different surfaces. The depth direction density of the point defects was an important factor in this trend. The number of point defects required for nanoporous structure formation was 4 × 1022 vacancies/m2 at a depth of 18 nm under the surface, based on a comparison of similar nanoporous structure features in GaSb. The nanoporous structure formation by ion beam irradiation on GaSb, InSb, and Ge surfaces was controlled by the number and areal distribution of the created point defects.https://www.mdpi.com/2079-4991/7/7/180nanoporous structureGaSbInSbGeion beam irradiationpoint defectinterstitialvacancysurface modificationFIB |
| spellingShingle | Yusuke Yanagida Tomoya Oishi Takashi Miyaji Chiaki Watanabe Noriko Nitta Nanoporous Structure Formation in GaSb, InSb, and Ge by Ion Beam Irradiation under Controlled Point Defect Creation Conditions Nanomaterials nanoporous structure GaSb InSb Ge ion beam irradiation point defect interstitial vacancy surface modification FIB |
| title | Nanoporous Structure Formation in GaSb, InSb, and Ge by Ion Beam Irradiation under Controlled Point Defect Creation Conditions |
| title_full | Nanoporous Structure Formation in GaSb, InSb, and Ge by Ion Beam Irradiation under Controlled Point Defect Creation Conditions |
| title_fullStr | Nanoporous Structure Formation in GaSb, InSb, and Ge by Ion Beam Irradiation under Controlled Point Defect Creation Conditions |
| title_full_unstemmed | Nanoporous Structure Formation in GaSb, InSb, and Ge by Ion Beam Irradiation under Controlled Point Defect Creation Conditions |
| title_short | Nanoporous Structure Formation in GaSb, InSb, and Ge by Ion Beam Irradiation under Controlled Point Defect Creation Conditions |
| title_sort | nanoporous structure formation in gasb insb and ge by ion beam irradiation under controlled point defect creation conditions |
| topic | nanoporous structure GaSb InSb Ge ion beam irradiation point defect interstitial vacancy surface modification FIB |
| url | https://www.mdpi.com/2079-4991/7/7/180 |
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