Nanoporous Structure Formation in GaSb, InSb, and Ge by Ion Beam Irradiation under Controlled Point Defect Creation Conditions

Nanoporous Structure Formation in GaSb, InSb, and Ge by Ion Beam Irradiation under Controlled Point Defect Creation Conditions

Ion beam irradiation-induced nanoporous structure formation was investigated on GaSb, InSb, and Ge surfaces via controlled point defect creation using a focused ion beam (FIB). ‎This paper compares the nanoporous structure formation under the same extent of point defect creation while changing the a...

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Hlavní autoři: Yusuke Yanagida, Tomoya Oishi, Takashi Miyaji, Chiaki Watanabe, Noriko Nitta
Médium: Článek
Jazyk:English
Vydáno: MDPI AG 2017-07-01
Edice:Nanomaterials
Témata:
nanoporous structure
GaSb
InSb
Ge
ion beam irradiation
point defect
interstitial
vacancy
surface modification
FIB
On-line přístup:https://www.mdpi.com/2079-4991/7/7/180

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https://www.mdpi.com/2079-4991/7/7/180

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