Recent Advances in Si-Compatible Nanostructured Photodetectors

In this review the latest advances in the field of nanostructured photodetectors are considered, stating the types and materials, and highlighting the features of operation. Special attention is paid to the group-IV material photodetectors, including Ge, Si, Sn, and their solid solutions. Among the...

Full description

Bibliographic Details
Main Authors: Rahaf Douhan, Kirill Lozovoy, Andrey Kokhanenko, Hazem Deeb, Vladimir Dirko, Kristina Khomyakova
Format: Article
Language:English
Published: MDPI AG 2023-01-01
Series:Technologies
Subjects:
Online Access:https://www.mdpi.com/2227-7080/11/1/17
_version_ 1797618017210728448
author Rahaf Douhan
Kirill Lozovoy
Andrey Kokhanenko
Hazem Deeb
Vladimir Dirko
Kristina Khomyakova
author_facet Rahaf Douhan
Kirill Lozovoy
Andrey Kokhanenko
Hazem Deeb
Vladimir Dirko
Kristina Khomyakova
author_sort Rahaf Douhan
collection DOAJ
description In this review the latest advances in the field of nanostructured photodetectors are considered, stating the types and materials, and highlighting the features of operation. Special attention is paid to the group-IV material photodetectors, including Ge, Si, Sn, and their solid solutions. Among the various designs, photodetectors with quantum wells, quantum dots, and quantum wires are highlighted. Such nanostructures have a number of unique properties, that made them striking to scientists’ attention and device applications. Since silicon is the dominating semiconductor material in the electronic industry over the past decades, and as germanium and tin nanostructures are very compatible with silicon, the combination of these factors makes them the promising candidate to use in future technologies.
first_indexed 2024-03-11T08:04:12Z
format Article
id doaj.art-c9f8f0ebb776408dbd1e698ac23da99e
institution Directory Open Access Journal
issn 2227-7080
language English
last_indexed 2024-03-11T08:04:12Z
publishDate 2023-01-01
publisher MDPI AG
record_format Article
series Technologies
spelling doaj.art-c9f8f0ebb776408dbd1e698ac23da99e2023-11-16T23:36:04ZengMDPI AGTechnologies2227-70802023-01-011111710.3390/technologies11010017Recent Advances in Si-Compatible Nanostructured PhotodetectorsRahaf Douhan0Kirill Lozovoy1Andrey Kokhanenko2Hazem Deeb3Vladimir Dirko4Kristina Khomyakova5Faculty of Radiophysics, National Research Tomsk State University, Lenin Av. 36, 634050 Tomsk, RussiaFaculty of Radiophysics, National Research Tomsk State University, Lenin Av. 36, 634050 Tomsk, RussiaFaculty of Radiophysics, National Research Tomsk State University, Lenin Av. 36, 634050 Tomsk, RussiaFaculty of Radiophysics, National Research Tomsk State University, Lenin Av. 36, 634050 Tomsk, RussiaFaculty of Radiophysics, National Research Tomsk State University, Lenin Av. 36, 634050 Tomsk, RussiaFaculty of Radiophysics, National Research Tomsk State University, Lenin Av. 36, 634050 Tomsk, RussiaIn this review the latest advances in the field of nanostructured photodetectors are considered, stating the types and materials, and highlighting the features of operation. Special attention is paid to the group-IV material photodetectors, including Ge, Si, Sn, and their solid solutions. Among the various designs, photodetectors with quantum wells, quantum dots, and quantum wires are highlighted. Such nanostructures have a number of unique properties, that made them striking to scientists’ attention and device applications. Since silicon is the dominating semiconductor material in the electronic industry over the past decades, and as germanium and tin nanostructures are very compatible with silicon, the combination of these factors makes them the promising candidate to use in future technologies.https://www.mdpi.com/2227-7080/11/1/17photodetectorquantum wellquantum dotsilicongermaniumtin
spellingShingle Rahaf Douhan
Kirill Lozovoy
Andrey Kokhanenko
Hazem Deeb
Vladimir Dirko
Kristina Khomyakova
Recent Advances in Si-Compatible Nanostructured Photodetectors
Technologies
photodetector
quantum well
quantum dot
silicon
germanium
tin
title Recent Advances in Si-Compatible Nanostructured Photodetectors
title_full Recent Advances in Si-Compatible Nanostructured Photodetectors
title_fullStr Recent Advances in Si-Compatible Nanostructured Photodetectors
title_full_unstemmed Recent Advances in Si-Compatible Nanostructured Photodetectors
title_short Recent Advances in Si-Compatible Nanostructured Photodetectors
title_sort recent advances in si compatible nanostructured photodetectors
topic photodetector
quantum well
quantum dot
silicon
germanium
tin
url https://www.mdpi.com/2227-7080/11/1/17
work_keys_str_mv AT rahafdouhan recentadvancesinsicompatiblenanostructuredphotodetectors
AT kirilllozovoy recentadvancesinsicompatiblenanostructuredphotodetectors
AT andreykokhanenko recentadvancesinsicompatiblenanostructuredphotodetectors
AT hazemdeeb recentadvancesinsicompatiblenanostructuredphotodetectors
AT vladimirdirko recentadvancesinsicompatiblenanostructuredphotodetectors
AT kristinakhomyakova recentadvancesinsicompatiblenanostructuredphotodetectors