Recent Advances in Si-Compatible Nanostructured Photodetectors
In this review the latest advances in the field of nanostructured photodetectors are considered, stating the types and materials, and highlighting the features of operation. Special attention is paid to the group-IV material photodetectors, including Ge, Si, Sn, and their solid solutions. Among the...
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Format: | Article |
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MDPI AG
2023-01-01
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Series: | Technologies |
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Online Access: | https://www.mdpi.com/2227-7080/11/1/17 |
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author | Rahaf Douhan Kirill Lozovoy Andrey Kokhanenko Hazem Deeb Vladimir Dirko Kristina Khomyakova |
author_facet | Rahaf Douhan Kirill Lozovoy Andrey Kokhanenko Hazem Deeb Vladimir Dirko Kristina Khomyakova |
author_sort | Rahaf Douhan |
collection | DOAJ |
description | In this review the latest advances in the field of nanostructured photodetectors are considered, stating the types and materials, and highlighting the features of operation. Special attention is paid to the group-IV material photodetectors, including Ge, Si, Sn, and their solid solutions. Among the various designs, photodetectors with quantum wells, quantum dots, and quantum wires are highlighted. Such nanostructures have a number of unique properties, that made them striking to scientists’ attention and device applications. Since silicon is the dominating semiconductor material in the electronic industry over the past decades, and as germanium and tin nanostructures are very compatible with silicon, the combination of these factors makes them the promising candidate to use in future technologies. |
first_indexed | 2024-03-11T08:04:12Z |
format | Article |
id | doaj.art-c9f8f0ebb776408dbd1e698ac23da99e |
institution | Directory Open Access Journal |
issn | 2227-7080 |
language | English |
last_indexed | 2024-03-11T08:04:12Z |
publishDate | 2023-01-01 |
publisher | MDPI AG |
record_format | Article |
series | Technologies |
spelling | doaj.art-c9f8f0ebb776408dbd1e698ac23da99e2023-11-16T23:36:04ZengMDPI AGTechnologies2227-70802023-01-011111710.3390/technologies11010017Recent Advances in Si-Compatible Nanostructured PhotodetectorsRahaf Douhan0Kirill Lozovoy1Andrey Kokhanenko2Hazem Deeb3Vladimir Dirko4Kristina Khomyakova5Faculty of Radiophysics, National Research Tomsk State University, Lenin Av. 36, 634050 Tomsk, RussiaFaculty of Radiophysics, National Research Tomsk State University, Lenin Av. 36, 634050 Tomsk, RussiaFaculty of Radiophysics, National Research Tomsk State University, Lenin Av. 36, 634050 Tomsk, RussiaFaculty of Radiophysics, National Research Tomsk State University, Lenin Av. 36, 634050 Tomsk, RussiaFaculty of Radiophysics, National Research Tomsk State University, Lenin Av. 36, 634050 Tomsk, RussiaFaculty of Radiophysics, National Research Tomsk State University, Lenin Av. 36, 634050 Tomsk, RussiaIn this review the latest advances in the field of nanostructured photodetectors are considered, stating the types and materials, and highlighting the features of operation. Special attention is paid to the group-IV material photodetectors, including Ge, Si, Sn, and their solid solutions. Among the various designs, photodetectors with quantum wells, quantum dots, and quantum wires are highlighted. Such nanostructures have a number of unique properties, that made them striking to scientists’ attention and device applications. Since silicon is the dominating semiconductor material in the electronic industry over the past decades, and as germanium and tin nanostructures are very compatible with silicon, the combination of these factors makes them the promising candidate to use in future technologies.https://www.mdpi.com/2227-7080/11/1/17photodetectorquantum wellquantum dotsilicongermaniumtin |
spellingShingle | Rahaf Douhan Kirill Lozovoy Andrey Kokhanenko Hazem Deeb Vladimir Dirko Kristina Khomyakova Recent Advances in Si-Compatible Nanostructured Photodetectors Technologies photodetector quantum well quantum dot silicon germanium tin |
title | Recent Advances in Si-Compatible Nanostructured Photodetectors |
title_full | Recent Advances in Si-Compatible Nanostructured Photodetectors |
title_fullStr | Recent Advances in Si-Compatible Nanostructured Photodetectors |
title_full_unstemmed | Recent Advances in Si-Compatible Nanostructured Photodetectors |
title_short | Recent Advances in Si-Compatible Nanostructured Photodetectors |
title_sort | recent advances in si compatible nanostructured photodetectors |
topic | photodetector quantum well quantum dot silicon germanium tin |
url | https://www.mdpi.com/2227-7080/11/1/17 |
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