Lateral Capacitance–Voltage Method of NanoMOSFET for Detecting the Hot Carrier Injection
In this paper, the dependence of the capacitance of lateral drain–substrate and source–substrate junctions on the linear size of the oxide trapped charge in MOSFET is simulated. It is shown that, at some range of linear sizes of the trapped charge, the capacitance of lateral junctions linearly depen...
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MDPI AG
2020-11-01
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| Series: | Applied Sciences |
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| Online Access: | https://www.mdpi.com/2076-3417/10/21/7935 |
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| author | Atabek E. Atamuratov Ahmed Yusupov Zukhra A. Atamuratova Jean Chamberlain Chedjou Kyandoghere Kyamakya |
| author_facet | Atabek E. Atamuratov Ahmed Yusupov Zukhra A. Atamuratova Jean Chamberlain Chedjou Kyandoghere Kyamakya |
| author_sort | Atabek E. Atamuratov |
| collection | DOAJ |
| description | In this paper, the dependence of the capacitance of lateral drain–substrate and source–substrate junctions on the linear size of the oxide trapped charge in MOSFET is simulated. It is shown that, at some range of linear sizes of the trapped charge, the capacitance of lateral junctions linearly depends on the linear size of the trapped charge. The dependence of the difference between drain–substrate and source–substrate capacitances on the linear size of trapped charges is also simulated. The revealed dependence can be used in measurements to estimate the linear size of oxide trapped charges induced by hot carrier injection, which can occur during MOSFET operation at defined conditions. |
| first_indexed | 2024-03-10T15:00:10Z |
| format | Article |
| id | doaj.art-ca2717ec3ae04a6ba00f092e2fa0e1fc |
| institution | Directory Open Access Journal |
| issn | 2076-3417 |
| language | English |
| last_indexed | 2024-03-10T15:00:10Z |
| publishDate | 2020-11-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Applied Sciences |
| spelling | doaj.art-ca2717ec3ae04a6ba00f092e2fa0e1fc2023-11-20T20:16:48ZengMDPI AGApplied Sciences2076-34172020-11-011021793510.3390/app10217935Lateral Capacitance–Voltage Method of NanoMOSFET for Detecting the Hot Carrier InjectionAtabek E. Atamuratov0Ahmed Yusupov1Zukhra A. Atamuratova2Jean Chamberlain Chedjou3Kyandoghere Kyamakya4Physics Department, Urgench State University, Kh. Olimjan Str., 14, Urgench 220100, UzbekistanDepartment of Electronics and Radio Engineering, Tashkent University of Information Technologies, A. Temur Str., 108, Tashkent 100200, UzbekistanPhysics Department, Urgench State University, Kh. Olimjan Str., 14, Urgench 220100, UzbekistanDepartment of Transportation Informatics, University of Klagenfurt, 9020 Klagenfurt, AustriaDepartment of Transportation Informatics, University of Klagenfurt, 9020 Klagenfurt, AustriaIn this paper, the dependence of the capacitance of lateral drain–substrate and source–substrate junctions on the linear size of the oxide trapped charge in MOSFET is simulated. It is shown that, at some range of linear sizes of the trapped charge, the capacitance of lateral junctions linearly depends on the linear size of the trapped charge. The dependence of the difference between drain–substrate and source–substrate capacitances on the linear size of trapped charges is also simulated. The revealed dependence can be used in measurements to estimate the linear size of oxide trapped charges induced by hot carrier injection, which can occur during MOSFET operation at defined conditions.https://www.mdpi.com/2076-3417/10/21/7935MOSFETdegradationlateral transition capacitancethreshold voltagelocal charge |
| spellingShingle | Atabek E. Atamuratov Ahmed Yusupov Zukhra A. Atamuratova Jean Chamberlain Chedjou Kyandoghere Kyamakya Lateral Capacitance–Voltage Method of NanoMOSFET for Detecting the Hot Carrier Injection Applied Sciences MOSFET degradation lateral transition capacitance threshold voltage local charge |
| title | Lateral Capacitance–Voltage Method of NanoMOSFET for Detecting the Hot Carrier Injection |
| title_full | Lateral Capacitance–Voltage Method of NanoMOSFET for Detecting the Hot Carrier Injection |
| title_fullStr | Lateral Capacitance–Voltage Method of NanoMOSFET for Detecting the Hot Carrier Injection |
| title_full_unstemmed | Lateral Capacitance–Voltage Method of NanoMOSFET for Detecting the Hot Carrier Injection |
| title_short | Lateral Capacitance–Voltage Method of NanoMOSFET for Detecting the Hot Carrier Injection |
| title_sort | lateral capacitance voltage method of nanomosfet for detecting the hot carrier injection |
| topic | MOSFET degradation lateral transition capacitance threshold voltage local charge |
| url | https://www.mdpi.com/2076-3417/10/21/7935 |
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