Electrical Characterization of Germanium Nanowires Using a Symmetric Hall Bar Configuration: Size and Shape Dependence
The fabrication of individual nanowire-based devices and their comprehensive electrical characterization remains a major challenge. Here, we present a symmetric Hall bar configuration for highly p-type germanium nanowires (GeNWs), fabricated by a top-down approach using electron beam lithography and...
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MDPI AG
2021-10-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/11/11/2917 |
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| author | Ahmad Echresh Himani Arora Florian Fuchs Zichao Li René Hübner Slawomir Prucnal Jörg Schuster Peter Zahn Manfred Helm Shengqiang Zhou Artur Erbe Lars Rebohle Yordan M. Georgiev |
| author_facet | Ahmad Echresh Himani Arora Florian Fuchs Zichao Li René Hübner Slawomir Prucnal Jörg Schuster Peter Zahn Manfred Helm Shengqiang Zhou Artur Erbe Lars Rebohle Yordan M. Georgiev |
| author_sort | Ahmad Echresh |
| collection | DOAJ |
| description | The fabrication of individual nanowire-based devices and their comprehensive electrical characterization remains a major challenge. Here, we present a symmetric Hall bar configuration for highly p-type germanium nanowires (GeNWs), fabricated by a top-down approach using electron beam lithography and inductively coupled plasma reactive ion etching. The configuration allows two equivalent measurement sets to check the homogeneity of GeNWs in terms of resistivity and the Hall coefficient. The highest Hall mobility and carrier concentration of GeNWs at 5 K were in the order of 100 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><msup><mi>cm</mi><mn>2</mn></msup><mo>/</mo><mrow><mo>(</mo><mi>Vs</mi><mo>)</mo></mrow></mrow></semantics></math></inline-formula> and <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mn>4</mn><mo>×</mo><msup><mn>10</mn><mn>19</mn></msup><mspace width="3.33333pt"></mspace><msup><mi>cm</mi><mrow><mo>−</mo><mn>3</mn></mrow></msup></mrow></semantics></math></inline-formula>, respectively. With a decreasing nanowire width, the resistivity increases and the carrier concentration decreases, which is attributed to carrier scattering in the region near the surface. By comparing the measured data with simulations, one can conclude the existence of a depletion region, which decreases the effective cross-section of GeNWs. Moreover, the resistivity of thin GeNWs is strongly influenced by the cross-sectional shape. |
| first_indexed | 2024-03-10T05:13:16Z |
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| id | doaj.art-ca545c4e95a34879bfdaf3b978cb6a31 |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-10T05:13:16Z |
| publishDate | 2021-10-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-ca545c4e95a34879bfdaf3b978cb6a312023-11-23T00:40:23ZengMDPI AGNanomaterials2079-49912021-10-011111291710.3390/nano11112917Electrical Characterization of Germanium Nanowires Using a Symmetric Hall Bar Configuration: Size and Shape DependenceAhmad Echresh0Himani Arora1Florian Fuchs2Zichao Li3René Hübner4Slawomir Prucnal5Jörg Schuster6Peter Zahn7Manfred Helm8Shengqiang Zhou9Artur Erbe10Lars Rebohle11Yordan M. Georgiev12Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), 01328 Dresden, GermanyInstitute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), 01328 Dresden, GermanyFraunhofer Institute for Electronic Nano Systems (ENAS), 09126 Chemnitz, GermanyInstitute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), 01328 Dresden, GermanyInstitute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), 01328 Dresden, GermanyInstitute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), 01328 Dresden, GermanyFraunhofer Institute for Electronic Nano Systems (ENAS), 09126 Chemnitz, GermanyInstitute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), 01328 Dresden, GermanyInstitute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), 01328 Dresden, GermanyInstitute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), 01328 Dresden, GermanyInstitute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), 01328 Dresden, GermanyInstitute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), 01328 Dresden, GermanyInstitute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), 01328 Dresden, GermanyThe fabrication of individual nanowire-based devices and their comprehensive electrical characterization remains a major challenge. Here, we present a symmetric Hall bar configuration for highly p-type germanium nanowires (GeNWs), fabricated by a top-down approach using electron beam lithography and inductively coupled plasma reactive ion etching. The configuration allows two equivalent measurement sets to check the homogeneity of GeNWs in terms of resistivity and the Hall coefficient. The highest Hall mobility and carrier concentration of GeNWs at 5 K were in the order of 100 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><msup><mi>cm</mi><mn>2</mn></msup><mo>/</mo><mrow><mo>(</mo><mi>Vs</mi><mo>)</mo></mrow></mrow></semantics></math></inline-formula> and <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mn>4</mn><mo>×</mo><msup><mn>10</mn><mn>19</mn></msup><mspace width="3.33333pt"></mspace><msup><mi>cm</mi><mrow><mo>−</mo><mn>3</mn></mrow></msup></mrow></semantics></math></inline-formula>, respectively. With a decreasing nanowire width, the resistivity increases and the carrier concentration decreases, which is attributed to carrier scattering in the region near the surface. By comparing the measured data with simulations, one can conclude the existence of a depletion region, which decreases the effective cross-section of GeNWs. Moreover, the resistivity of thin GeNWs is strongly influenced by the cross-sectional shape.https://www.mdpi.com/2079-4991/11/11/2917germanium nanowiresHall bar configurationHall effectelectrical characterization |
| spellingShingle | Ahmad Echresh Himani Arora Florian Fuchs Zichao Li René Hübner Slawomir Prucnal Jörg Schuster Peter Zahn Manfred Helm Shengqiang Zhou Artur Erbe Lars Rebohle Yordan M. Georgiev Electrical Characterization of Germanium Nanowires Using a Symmetric Hall Bar Configuration: Size and Shape Dependence Nanomaterials germanium nanowires Hall bar configuration Hall effect electrical characterization |
| title | Electrical Characterization of Germanium Nanowires Using a Symmetric Hall Bar Configuration: Size and Shape Dependence |
| title_full | Electrical Characterization of Germanium Nanowires Using a Symmetric Hall Bar Configuration: Size and Shape Dependence |
| title_fullStr | Electrical Characterization of Germanium Nanowires Using a Symmetric Hall Bar Configuration: Size and Shape Dependence |
| title_full_unstemmed | Electrical Characterization of Germanium Nanowires Using a Symmetric Hall Bar Configuration: Size and Shape Dependence |
| title_short | Electrical Characterization of Germanium Nanowires Using a Symmetric Hall Bar Configuration: Size and Shape Dependence |
| title_sort | electrical characterization of germanium nanowires using a symmetric hall bar configuration size and shape dependence |
| topic | germanium nanowires Hall bar configuration Hall effect electrical characterization |
| url | https://www.mdpi.com/2079-4991/11/11/2917 |
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