Frequency-Dependent Sonochemical Processing of Silicon Surfaces in Tetrahydrofuran Studied by Surface Photovoltage Transients
The field of chemical and physical transformations induced by ultrasonic waves has shown steady progress during the past decades. There is a solid core of established results and some topics that are not thoroughly developed. The effect of varying ultrasonic frequency is among the most beneficial is...
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| Format: | Article |
| Language: | English |
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MDPI AG
2021-06-01
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| Series: | Molecules |
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| Online Access: | https://www.mdpi.com/1420-3049/26/12/3756 |
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| author | Artem Podolian Andriy Nadtochiy Oleg Korotchenkov Viktor Schlosser |
| author_facet | Artem Podolian Andriy Nadtochiy Oleg Korotchenkov Viktor Schlosser |
| author_sort | Artem Podolian |
| collection | DOAJ |
| description | The field of chemical and physical transformations induced by ultrasonic waves has shown steady progress during the past decades. There is a solid core of established results and some topics that are not thoroughly developed. The effect of varying ultrasonic frequency is among the most beneficial issues that require advances. In this work, the effect of sonication of Si wafers in tetrahydrofuran on the photovoltage performance was studied, with the specific goal of studying the influence of the varying frequency. The applied ultrasonic transducer design approach enables the construction of the transducer operating at about 400 kHz with a sufficient sonochemical efficiency. The measurements of the surface photovoltage (SPV) transients were performed on p-type Cz-Si(111) wafers. Sonication was done in tetrahydrofuran, methanol, and in their 3:1 mixture. When using tetrahydrofuran, the enhanced SPV signal (up to ≈80%) was observed due to increasing sonication frequency to 400 kHz. In turn, the signal was decreased down to ≈75% of the initial value when the frequency is lowered to 28 kHz. The addition of methanol suppressed this significant difference. It was implied that different decay processes with hydrogen decomposed from tetrahydrofuran could be attempted to explain the mechanism behind the observed frequency-dependent behavior. |
| first_indexed | 2024-03-10T10:15:03Z |
| format | Article |
| id | doaj.art-caef69dad530402ca24525fbea8494b3 |
| institution | Directory Open Access Journal |
| issn | 1420-3049 |
| language | English |
| last_indexed | 2024-03-10T10:15:03Z |
| publishDate | 2021-06-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Molecules |
| spelling | doaj.art-caef69dad530402ca24525fbea8494b32023-11-22T00:56:45ZengMDPI AGMolecules1420-30492021-06-012612375610.3390/molecules26123756Frequency-Dependent Sonochemical Processing of Silicon Surfaces in Tetrahydrofuran Studied by Surface Photovoltage TransientsArtem Podolian0Andriy Nadtochiy1Oleg Korotchenkov2Viktor Schlosser3Faculty of Physics, Taras Shevchenko National University of Kyiv, 01601 Kyiv, UkraineFaculty of Physics, Taras Shevchenko National University of Kyiv, 01601 Kyiv, UkraineFaculty of Physics, Taras Shevchenko National University of Kyiv, 01601 Kyiv, UkraineDepartment of Electronic Properties of Materials, Faculty of Physics, University of Vienna, A-1090 Wien, AustriaThe field of chemical and physical transformations induced by ultrasonic waves has shown steady progress during the past decades. There is a solid core of established results and some topics that are not thoroughly developed. The effect of varying ultrasonic frequency is among the most beneficial issues that require advances. In this work, the effect of sonication of Si wafers in tetrahydrofuran on the photovoltage performance was studied, with the specific goal of studying the influence of the varying frequency. The applied ultrasonic transducer design approach enables the construction of the transducer operating at about 400 kHz with a sufficient sonochemical efficiency. The measurements of the surface photovoltage (SPV) transients were performed on p-type Cz-Si(111) wafers. Sonication was done in tetrahydrofuran, methanol, and in their 3:1 mixture. When using tetrahydrofuran, the enhanced SPV signal (up to ≈80%) was observed due to increasing sonication frequency to 400 kHz. In turn, the signal was decreased down to ≈75% of the initial value when the frequency is lowered to 28 kHz. The addition of methanol suppressed this significant difference. It was implied that different decay processes with hydrogen decomposed from tetrahydrofuran could be attempted to explain the mechanism behind the observed frequency-dependent behavior.https://www.mdpi.com/1420-3049/26/12/3756power ultrasoundsonochemistryultrasonic frequencysilicontetrahydrofuransurface photovoltage |
| spellingShingle | Artem Podolian Andriy Nadtochiy Oleg Korotchenkov Viktor Schlosser Frequency-Dependent Sonochemical Processing of Silicon Surfaces in Tetrahydrofuran Studied by Surface Photovoltage Transients Molecules power ultrasound sonochemistry ultrasonic frequency silicon tetrahydrofuran surface photovoltage |
| title | Frequency-Dependent Sonochemical Processing of Silicon Surfaces in Tetrahydrofuran Studied by Surface Photovoltage Transients |
| title_full | Frequency-Dependent Sonochemical Processing of Silicon Surfaces in Tetrahydrofuran Studied by Surface Photovoltage Transients |
| title_fullStr | Frequency-Dependent Sonochemical Processing of Silicon Surfaces in Tetrahydrofuran Studied by Surface Photovoltage Transients |
| title_full_unstemmed | Frequency-Dependent Sonochemical Processing of Silicon Surfaces in Tetrahydrofuran Studied by Surface Photovoltage Transients |
| title_short | Frequency-Dependent Sonochemical Processing of Silicon Surfaces in Tetrahydrofuran Studied by Surface Photovoltage Transients |
| title_sort | frequency dependent sonochemical processing of silicon surfaces in tetrahydrofuran studied by surface photovoltage transients |
| topic | power ultrasound sonochemistry ultrasonic frequency silicon tetrahydrofuran surface photovoltage |
| url | https://www.mdpi.com/1420-3049/26/12/3756 |
| work_keys_str_mv | AT artempodolian frequencydependentsonochemicalprocessingofsiliconsurfacesintetrahydrofuranstudiedbysurfacephotovoltagetransients AT andriynadtochiy frequencydependentsonochemicalprocessingofsiliconsurfacesintetrahydrofuranstudiedbysurfacephotovoltagetransients AT olegkorotchenkov frequencydependentsonochemicalprocessingofsiliconsurfacesintetrahydrofuranstudiedbysurfacephotovoltagetransients AT viktorschlosser frequencydependentsonochemicalprocessingofsiliconsurfacesintetrahydrofuranstudiedbysurfacephotovoltagetransients |