Improvements of Electrical Characteristics in Poly-Si Nanowires Thin-Film Transistors with External Connection of a BiFeO<sub>3</sub> Capacitor
By a sol–gel method, a BiFeO<sub>3</sub> (BFO) capacitor is fabricated and connected with the control thin film transistor (TFT). Compared with a control thin-film transistor, the proposed BFO TFT achieves 56% drive current enhancement and 7–28% subthreshold swing (SS) reduction. Moreove...
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| Format: | Article |
| Language: | English |
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MDPI AG
2021-09-01
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| Series: | Membranes |
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| Online Access: | https://www.mdpi.com/2077-0375/11/10/758 |
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| author | Tsung-Kuei Kang Yu-Yu Lin Han-Wen Liu Che-Li Lin Po-Jui Chang Ming-Cheng Kao Hone-Zern Chen |
| author_facet | Tsung-Kuei Kang Yu-Yu Lin Han-Wen Liu Che-Li Lin Po-Jui Chang Ming-Cheng Kao Hone-Zern Chen |
| author_sort | Tsung-Kuei Kang |
| collection | DOAJ |
| description | By a sol–gel method, a BiFeO<sub>3</sub> (BFO) capacitor is fabricated and connected with the control thin film transistor (TFT). Compared with a control thin-film transistor, the proposed BFO TFT achieves 56% drive current enhancement and 7–28% subthreshold swing (SS) reduction. Moreover, the effect of the proposed BiFeO<sub>3</sub> capacitor on I<sub>DS</sub>-V<sub>GS</sub> hysteresis in the BFO TFT is 0.1–0.2 V. Because dV<sub>int</sub>/dV<sub>GS</sub> > 1 is obtained at a wide range of V<sub>GS</sub>, it reveals that the incomplete dipole flipping is a major mechanism to obtain improved SS and a small hysteresis effect in the BFO TFT. Experimental results indicate that sol-gel BFO TFT is a potential candidate for digital application. |
| first_indexed | 2024-03-10T06:24:23Z |
| format | Article |
| id | doaj.art-caf8eddc23f443e8bde193836dee011e |
| institution | Directory Open Access Journal |
| issn | 2077-0375 |
| language | English |
| last_indexed | 2024-03-10T06:24:23Z |
| publishDate | 2021-09-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Membranes |
| spelling | doaj.art-caf8eddc23f443e8bde193836dee011e2023-11-22T19:06:10ZengMDPI AGMembranes2077-03752021-09-01111075810.3390/membranes11100758Improvements of Electrical Characteristics in Poly-Si Nanowires Thin-Film Transistors with External Connection of a BiFeO<sub>3</sub> CapacitorTsung-Kuei Kang0Yu-Yu Lin1Han-Wen Liu2Che-Li Lin3Po-Jui Chang4Ming-Cheng Kao5Hone-Zern Chen6Department of Electronic Engineering, Feng Chia University, Taichung 407, TaiwanDepartment of Electronic Engineering, Feng Chia University, Taichung 407, TaiwanDepartment of Electrical Engineering, National Chung Hsing University, Taichung 407, TaiwanDepartment of Electronic Engineering, Feng Chia University, Taichung 407, TaiwanDepartment of Electrical Engineering, National Chung Hsing University, Taichung 407, TaiwanDepartment of Electrical Engineering, Hsiuping University of Science and Technology, Taichung 407, TaiwanDepartment of Electrical Engineering, Hsiuping University of Science and Technology, Taichung 407, TaiwanBy a sol–gel method, a BiFeO<sub>3</sub> (BFO) capacitor is fabricated and connected with the control thin film transistor (TFT). Compared with a control thin-film transistor, the proposed BFO TFT achieves 56% drive current enhancement and 7–28% subthreshold swing (SS) reduction. Moreover, the effect of the proposed BiFeO<sub>3</sub> capacitor on I<sub>DS</sub>-V<sub>GS</sub> hysteresis in the BFO TFT is 0.1–0.2 V. Because dV<sub>int</sub>/dV<sub>GS</sub> > 1 is obtained at a wide range of V<sub>GS</sub>, it reveals that the incomplete dipole flipping is a major mechanism to obtain improved SS and a small hysteresis effect in the BFO TFT. Experimental results indicate that sol-gel BFO TFT is a potential candidate for digital application.https://www.mdpi.com/2077-0375/11/10/758BiFeO<sub>3</sub> capacitorsol–gel methoddrive currenthysteresissubthreshold swingincomplete dipole flipping |
| spellingShingle | Tsung-Kuei Kang Yu-Yu Lin Han-Wen Liu Che-Li Lin Po-Jui Chang Ming-Cheng Kao Hone-Zern Chen Improvements of Electrical Characteristics in Poly-Si Nanowires Thin-Film Transistors with External Connection of a BiFeO<sub>3</sub> Capacitor Membranes BiFeO<sub>3</sub> capacitor sol–gel method drive current hysteresis subthreshold swing incomplete dipole flipping |
| title | Improvements of Electrical Characteristics in Poly-Si Nanowires Thin-Film Transistors with External Connection of a BiFeO<sub>3</sub> Capacitor |
| title_full | Improvements of Electrical Characteristics in Poly-Si Nanowires Thin-Film Transistors with External Connection of a BiFeO<sub>3</sub> Capacitor |
| title_fullStr | Improvements of Electrical Characteristics in Poly-Si Nanowires Thin-Film Transistors with External Connection of a BiFeO<sub>3</sub> Capacitor |
| title_full_unstemmed | Improvements of Electrical Characteristics in Poly-Si Nanowires Thin-Film Transistors with External Connection of a BiFeO<sub>3</sub> Capacitor |
| title_short | Improvements of Electrical Characteristics in Poly-Si Nanowires Thin-Film Transistors with External Connection of a BiFeO<sub>3</sub> Capacitor |
| title_sort | improvements of electrical characteristics in poly si nanowires thin film transistors with external connection of a bifeo sub 3 sub capacitor |
| topic | BiFeO<sub>3</sub> capacitor sol–gel method drive current hysteresis subthreshold swing incomplete dipole flipping |
| url | https://www.mdpi.com/2077-0375/11/10/758 |
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