Fabrication of Highly Resistive NiO Thin Films for Nanoelectronic Applications
Abstract Thin films of the prototypical charge transfer insulator nickel oxide appear to be a promising material for novel nanoelectronic devices. The fabrication of the material is challenging, however, and mostly a p‐type semiconducting phase is reported. Here, the results of a factorial experimen...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2022-12-01
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| Series: | Advanced Physics Research |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/apxr.202200008 |
| _version_ | 1797775058111823872 |
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| author | Johannes Mohr Tyler Hennen Daniel Bedau Joyeeta Nag Rainer Waser Dirk J. Wouters |
| author_facet | Johannes Mohr Tyler Hennen Daniel Bedau Joyeeta Nag Rainer Waser Dirk J. Wouters |
| author_sort | Johannes Mohr |
| collection | DOAJ |
| description | Abstract Thin films of the prototypical charge transfer insulator nickel oxide appear to be a promising material for novel nanoelectronic devices. The fabrication of the material is challenging, however, and mostly a p‐type semiconducting phase is reported. Here, the results of a factorial experiment are presented that allow optimization of the properties of thin films deposited using sputtering. A cluster analysis is performed, and four main types of films are found. Among them, the desired insulating phase is identified. From this material, nanoscale devices are fabricated, which demonstrate that the results carry over to relevant length scales. Initial switching results are reported. |
| first_indexed | 2024-03-12T22:29:55Z |
| format | Article |
| id | doaj.art-cb46c27fce0a48d9b15ba02caea33aa0 |
| institution | Directory Open Access Journal |
| issn | 2751-1200 |
| language | English |
| last_indexed | 2024-03-12T22:29:55Z |
| publishDate | 2022-12-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Physics Research |
| spelling | doaj.art-cb46c27fce0a48d9b15ba02caea33aa02023-07-21T15:30:35ZengWiley-VCHAdvanced Physics Research2751-12002022-12-0111n/an/a10.1002/apxr.202200008Fabrication of Highly Resistive NiO Thin Films for Nanoelectronic ApplicationsJohannes Mohr0Tyler Hennen1Daniel Bedau2Joyeeta Nag3Rainer Waser4Dirk J. Wouters5Institute of Materials in Electrical Engineering and Information Technology II RWTH Aachen University 52074 Aachen GermanyInstitute of Materials in Electrical Engineering and Information Technology II RWTH Aachen University 52074 Aachen GermanyWestern Digital San Jose Research Center 5601 Great Oaks Parkway San Jose CA 95119 USAWestern Digital San Jose Research Center 5601 Great Oaks Parkway San Jose CA 95119 USAInstitute of Materials in Electrical Engineering and Information Technology II RWTH Aachen University 52074 Aachen GermanyInstitute of Materials in Electrical Engineering and Information Technology II RWTH Aachen University 52074 Aachen GermanyAbstract Thin films of the prototypical charge transfer insulator nickel oxide appear to be a promising material for novel nanoelectronic devices. The fabrication of the material is challenging, however, and mostly a p‐type semiconducting phase is reported. Here, the results of a factorial experiment are presented that allow optimization of the properties of thin films deposited using sputtering. A cluster analysis is performed, and four main types of films are found. Among them, the desired insulating phase is identified. From this material, nanoscale devices are fabricated, which demonstrate that the results carry over to relevant length scales. Initial switching results are reported.https://doi.org/10.1002/apxr.202200008charge transfer insulatorscluster analysisfactorial DOENiOsputter deposition |
| spellingShingle | Johannes Mohr Tyler Hennen Daniel Bedau Joyeeta Nag Rainer Waser Dirk J. Wouters Fabrication of Highly Resistive NiO Thin Films for Nanoelectronic Applications Advanced Physics Research charge transfer insulators cluster analysis factorial DOE NiO sputter deposition |
| title | Fabrication of Highly Resistive NiO Thin Films for Nanoelectronic Applications |
| title_full | Fabrication of Highly Resistive NiO Thin Films for Nanoelectronic Applications |
| title_fullStr | Fabrication of Highly Resistive NiO Thin Films for Nanoelectronic Applications |
| title_full_unstemmed | Fabrication of Highly Resistive NiO Thin Films for Nanoelectronic Applications |
| title_short | Fabrication of Highly Resistive NiO Thin Films for Nanoelectronic Applications |
| title_sort | fabrication of highly resistive nio thin films for nanoelectronic applications |
| topic | charge transfer insulators cluster analysis factorial DOE NiO sputter deposition |
| url | https://doi.org/10.1002/apxr.202200008 |
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