First-Principles Molecular Dynamics Simulations on Water–Solid Interface Behavior of H<sub>2</sub>O-Based Atomic Layer Deposition of Zirconium Dioxide

As an important inorganic material, zirconium dioxide (ZrO<sub>2</sub>) has a wide range of applications in the fields of microelectronics, coating, catalysis and energy. Due to its high dielectric constant and thermodynamic stability, ZrO<sub>2</sub> can be used as dielectri...

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Main Authors: Rui Xu, Zhongchao Zhou, Yingying Wang, Hongping Xiao, Lina Xu, Yihong Ding, Xinhua Li, Aidong Li, Guoyong Fang
Format: Article
Language:English
Published: MDPI AG 2022-12-01
Series:Nanomaterials
Subjects:
Online Access:https://www.mdpi.com/2079-4991/12/24/4362
_version_ 1797455965569679360
author Rui Xu
Zhongchao Zhou
Yingying Wang
Hongping Xiao
Lina Xu
Yihong Ding
Xinhua Li
Aidong Li
Guoyong Fang
author_facet Rui Xu
Zhongchao Zhou
Yingying Wang
Hongping Xiao
Lina Xu
Yihong Ding
Xinhua Li
Aidong Li
Guoyong Fang
author_sort Rui Xu
collection DOAJ
description As an important inorganic material, zirconium dioxide (ZrO<sub>2</sub>) has a wide range of applications in the fields of microelectronics, coating, catalysis and energy. Due to its high dielectric constant and thermodynamic stability, ZrO<sub>2</sub> can be used as dielectric material to replace traditional silicon dioxide. Currently, ZrO<sub>2</sub> dielectric films can be prepared by atomic layer deposition (ALD) using water and zirconium precursors, namely H<sub>2</sub>O-based ALD. Through density functional theory (DFT) calculations and first-principles molecular dynamics (FPMD) simulations, the adsorption and dissociation of water molecule on the ZrO<sub>2</sub> surface and the water–solid interface reaction were investigated. The results showed that the ZrO<sub>2</sub> (111) surface has four Lewis acid active sites with different coordination environments for the adsorption and dissociation of water. The Zr atom on the surface can interacted with the O atom of the water molecule via the <i>p</i> orbital of the O atom and the <i>d</i> orbital of the Zr atom. The water molecules could be dissociated via the water–solid interface reaction of the first or second layer of water molecules with the ZrO<sub>2</sub> (111) surface. These insights into the adsorption and dissociation of water and the water–solid interface reaction on the ZrO<sub>2</sub> surface could also provide a reference for the water–solid interface behavior of metal oxides, such as H<sub>2</sub>O-based ALD.
first_indexed 2024-03-09T16:01:41Z
format Article
id doaj.art-cb82ded62b794e868152c3eb952ebeb1
institution Directory Open Access Journal
issn 2079-4991
language English
last_indexed 2024-03-09T16:01:41Z
publishDate 2022-12-01
publisher MDPI AG
record_format Article
series Nanomaterials
spelling doaj.art-cb82ded62b794e868152c3eb952ebeb12023-11-24T17:03:03ZengMDPI AGNanomaterials2079-49912022-12-011224436210.3390/nano12244362First-Principles Molecular Dynamics Simulations on Water–Solid Interface Behavior of H<sub>2</sub>O-Based Atomic Layer Deposition of Zirconium DioxideRui Xu0Zhongchao Zhou1Yingying Wang2Hongping Xiao3Lina Xu4Yihong Ding5Xinhua Li6Aidong Li7Guoyong Fang8Key Laboratory of Carbon Materials of Zhejiang Province, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035, ChinaKey Laboratory of Carbon Materials of Zhejiang Province, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035, ChinaKey Laboratory of Carbon Materials of Zhejiang Province, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035, ChinaKey Laboratory of Carbon Materials of Zhejiang Province, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035, ChinaKey Laboratory of Carbon Materials of Zhejiang Province, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035, ChinaKey Laboratory of Carbon Materials of Zhejiang Province, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035, ChinaKey Laboratory of Carbon Materials of Zhejiang Province, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035, ChinaNational Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, ChinaKey Laboratory of Carbon Materials of Zhejiang Province, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035, ChinaAs an important inorganic material, zirconium dioxide (ZrO<sub>2</sub>) has a wide range of applications in the fields of microelectronics, coating, catalysis and energy. Due to its high dielectric constant and thermodynamic stability, ZrO<sub>2</sub> can be used as dielectric material to replace traditional silicon dioxide. Currently, ZrO<sub>2</sub> dielectric films can be prepared by atomic layer deposition (ALD) using water and zirconium precursors, namely H<sub>2</sub>O-based ALD. Through density functional theory (DFT) calculations and first-principles molecular dynamics (FPMD) simulations, the adsorption and dissociation of water molecule on the ZrO<sub>2</sub> surface and the water–solid interface reaction were investigated. The results showed that the ZrO<sub>2</sub> (111) surface has four Lewis acid active sites with different coordination environments for the adsorption and dissociation of water. The Zr atom on the surface can interacted with the O atom of the water molecule via the <i>p</i> orbital of the O atom and the <i>d</i> orbital of the Zr atom. The water molecules could be dissociated via the water–solid interface reaction of the first or second layer of water molecules with the ZrO<sub>2</sub> (111) surface. These insights into the adsorption and dissociation of water and the water–solid interface reaction on the ZrO<sub>2</sub> surface could also provide a reference for the water–solid interface behavior of metal oxides, such as H<sub>2</sub>O-based ALD.https://www.mdpi.com/2079-4991/12/24/4362zirconium dioxide (ZrO<sub>2</sub>)H<sub>2</sub>O-based atomic layer deposition (H<sub>2</sub>O-based ALD)water–solid interface reactionfirst-principles molecular dynamics (FPMD)density functional theory (DFT)
spellingShingle Rui Xu
Zhongchao Zhou
Yingying Wang
Hongping Xiao
Lina Xu
Yihong Ding
Xinhua Li
Aidong Li
Guoyong Fang
First-Principles Molecular Dynamics Simulations on Water–Solid Interface Behavior of H<sub>2</sub>O-Based Atomic Layer Deposition of Zirconium Dioxide
Nanomaterials
zirconium dioxide (ZrO<sub>2</sub>)
H<sub>2</sub>O-based atomic layer deposition (H<sub>2</sub>O-based ALD)
water–solid interface reaction
first-principles molecular dynamics (FPMD)
density functional theory (DFT)
title First-Principles Molecular Dynamics Simulations on Water–Solid Interface Behavior of H<sub>2</sub>O-Based Atomic Layer Deposition of Zirconium Dioxide
title_full First-Principles Molecular Dynamics Simulations on Water–Solid Interface Behavior of H<sub>2</sub>O-Based Atomic Layer Deposition of Zirconium Dioxide
title_fullStr First-Principles Molecular Dynamics Simulations on Water–Solid Interface Behavior of H<sub>2</sub>O-Based Atomic Layer Deposition of Zirconium Dioxide
title_full_unstemmed First-Principles Molecular Dynamics Simulations on Water–Solid Interface Behavior of H<sub>2</sub>O-Based Atomic Layer Deposition of Zirconium Dioxide
title_short First-Principles Molecular Dynamics Simulations on Water–Solid Interface Behavior of H<sub>2</sub>O-Based Atomic Layer Deposition of Zirconium Dioxide
title_sort first principles molecular dynamics simulations on water solid interface behavior of h sub 2 sub o based atomic layer deposition of zirconium dioxide
topic zirconium dioxide (ZrO<sub>2</sub>)
H<sub>2</sub>O-based atomic layer deposition (H<sub>2</sub>O-based ALD)
water–solid interface reaction
first-principles molecular dynamics (FPMD)
density functional theory (DFT)
url https://www.mdpi.com/2079-4991/12/24/4362
work_keys_str_mv AT ruixu firstprinciplesmoleculardynamicssimulationsonwatersolidinterfacebehaviorofhsub2subobasedatomiclayerdepositionofzirconiumdioxide
AT zhongchaozhou firstprinciplesmoleculardynamicssimulationsonwatersolidinterfacebehaviorofhsub2subobasedatomiclayerdepositionofzirconiumdioxide
AT yingyingwang firstprinciplesmoleculardynamicssimulationsonwatersolidinterfacebehaviorofhsub2subobasedatomiclayerdepositionofzirconiumdioxide
AT hongpingxiao firstprinciplesmoleculardynamicssimulationsonwatersolidinterfacebehaviorofhsub2subobasedatomiclayerdepositionofzirconiumdioxide
AT linaxu firstprinciplesmoleculardynamicssimulationsonwatersolidinterfacebehaviorofhsub2subobasedatomiclayerdepositionofzirconiumdioxide
AT yihongding firstprinciplesmoleculardynamicssimulationsonwatersolidinterfacebehaviorofhsub2subobasedatomiclayerdepositionofzirconiumdioxide
AT xinhuali firstprinciplesmoleculardynamicssimulationsonwatersolidinterfacebehaviorofhsub2subobasedatomiclayerdepositionofzirconiumdioxide
AT aidongli firstprinciplesmoleculardynamicssimulationsonwatersolidinterfacebehaviorofhsub2subobasedatomiclayerdepositionofzirconiumdioxide
AT guoyongfang firstprinciplesmoleculardynamicssimulationsonwatersolidinterfacebehaviorofhsub2subobasedatomiclayerdepositionofzirconiumdioxide